Category Archives: Materials and Equipment

by James Montgomery, News Editor, Solid State Technology

August 20, 2008 – The other shoe seems to have fallen in the semiconductor equipment industry, as chipmakers’ pullback in capital investments that has dented orders for the better part of a year has caught up to the sales side of the equation. The latest updated monthly data from SEMI shows declines in both bookings and billings that haven’t been seen since the last cyclical slump in 2003 — and even the industry’s 2001 dark age.

Bookings in July reported by North America-based manufacturers of semiconductor equipment continued to fall, now below the $1B mark to $904.8M. That’s -3.1% lower than June’s downwardly revised number (more on that in a sec) and nearly -36% lower than a year ago. Billings were down -6.2% M-M and -35.5% Y-Y to $1087.4B, for a book-to-bill ratio (B:B) of 0.83, meaning $83 worth of orders was received for every $100 worth of product billed.

Last month SEMI said June bookings fell 7.7% vs. May, their lowest point in nearly three years, with a similar trough in Y-Y billings growth. Now, though, those numbers have been ratcheted even lower: SEMI now says bookings actually sunk -11.6% M-M and -34% Y-Y, while sales were down nearly -10% M-M and -42% Y-Y. Put another way, SEMI’s final numbers for June bookings were ~4% lower than prior estimates (about $52.1M), and sales were off by more than -9% (about $95M).

The June revisions look particularly bad on the sales side. The recalculated -11.7% M-M decline is the biggest M-M plunge since September 2001. And the 9.1% decline in sales over the past two months is the harshest since a -10% drop in Dec.2002-Jan.2003.

For some perspective on how lousy the numbers have become, here are some ugly benchmarks:

– Bookings are at their lowest since October 2003, and the fourth straight month of ≥-30% Y-Y slump, tying a low-water mark from mid-2005.

– The last time bookings were below the $1B mark was the spring of 2005 (for two months); if it happens again in August that’ll be a 3-month trend not seen since late 2003.

– We’re now at 14 straight months of Y-Y order declines (49% off the peak of $1782.3M two summers ago), a string last seen in 2001-2002.

– Billings are at their lowest since August 2005; the past two months together have seen ≥-35% declines, something the industry hasn’t seen since way back in the spring of 2002.

With both bookings and sales now slumping in sync, the obvious question is when can we expect them to hit bottom and bounce (particularly on the bookings side)? “While chipmakers remain attentive to cost controls, this remains a highly cyclic industry. “Factory utilization levels, unit demand growth, and planned fab projects suggest that new investment activity will resume in 2009,” said Daniel Tracy, SEMI’s senior director of industry research and statistics, in a statement. — J.M.

Click here to enlarge image

August 18, 2008 – Worldwide silicon wafer demand area shipments had been sluggish in previous quarters, but picked back up in 2Q08 to typical seasonal levels, according to data from SEMI’s Silicon Manufacturers Group (SMG).

Worldwide silicon area shipments in 2Q totaled 2303 millions of sq. in. (MSI), about 6.5% more than in 1Q08 and 4.6% higher than 2Q07. That follows three straight quarters of flat or slightly negative growth, and is the highest Q-Q increase in nearly three years (3Q05, 8.8%), while year-on-year growth has stayed in the same 4%-5% range for the past four quarters.

For 1H08, wafer shipments increased about 2.5% from the previous half-year (2H07) and 3.8% from 1H07.

The return to growth in 2Q08 is back in line with normal seasonality, coinciding with Japanese companies’ fiscal first quarters, and is a good sign “following the slightly weaker first quarter and macro economic concerns,” according to Kazuyo Heinink, chairwoman of SEMI SMG and VP of product marketing at MEMC Electronic Materials, in a statement. She attributed the growth mainly to demand for 300mm wafers.

Wafer Backside Coating


August 18, 2008

Using stencil, screen printing, and spin coating techniques, Henkel’s Ablestik 8000 series, wafer backside coating (WBC) reportedly enables the deposition of die-attach materials to the wafer backside down to a thickness of 20 &#181m on wafers as thin as 100 &#181m and up to 300 mm in diameter. Unlike conventional dispensing methods, printing or spin coating materials onto the wafer is said to deliver a tightly controlled, high UPH for high-volume die attach adhesive deposition. Bondline thickness is controlled to customer specifications, and chip footprint is maximized through the elimination of the fillet and repeatable material uniformity to ensure no die tilt. Once the wafer is coated, material is then B-staged where the material is advanced to a secondary, partially cured film-like, tack-free state, following which the wafer can be stored for later use.

The materials are available in conductive and non-conductive formulations and have been engineered to address the requirements of smaller die sizes to enable high throughput production of packages such as COLs, SOs, TSOPs, and QFNs, that have tight design tolerances and require controlled flow. Additionally, WBC material is a viable and effective alternative to standard solder-based processes for discretes and small power ICs. It is in production for single die configurations, and is said to become an alternative to film for stacked die applications. Henkel Corp. Irvine, CA. www.ablestik.com

August 18, 2008 — Cancer researchers have long faced the challenge in chemotherapy of how to get the most medication into the cells of a tumor without “spillover” of the medication adversely affecting the healthy cells in a patient’s body. Now researchers at Stanford University have addressed that problem using single-walled carbon nanotubes as delivery vehicles.
The new method has enabled the researchers to get a higher proportion of a given dose of medication into the tumor cells than is possible with the “free” drug—that is, the one not bound to nanotubes—thus reducing the amount of medication that they need to inject into a subject to achieve the desired therapeutic effect.
“That means you will also have less drug reaching the normal tissue,” said Hongjie Dai, professor of chemistry and senior author of a paper, which was published in the Aug. 15 issue of Cancer Research. So not only is the medication more effective against the tumor, ounce for ounce, but it greatly reduces the side effects of the medication. Graduate student Zhuang Liu is first author of the paper.

Dai and his colleagues worked with paclitaxel, a widely used cancer chemotherapy drug, which they employed against tumors cells of a type of breast cancer that were implanted under the skin of mice. They found that they were able to get up to 10 times as much medication into the tumor cells via the nanotubes as when the standard formulation of the drug, called Taxol, was injected into the mice.

The tumor cells were allowed to proliferate for about two weeks prior to being treated. After 22 days of treatment, tumors in the mice treated with the paclitaxel-bearing nanotubes were on average less than half the size of those in mice treated with Taxol.
Critical to achieving those results were the size and surface structure of the nanotubes, which governed how they interacted with the walls of the blood vessels through which they circulated after being injected. Though a leaky vessel—nautical or anatomical—is rarely a good thing, in this instance the relatively leaky walls of blood vessels in the tumor tissue provided the opening that the nanotubes needed to slip into the tumor cells. “The results are actually highly dependent on the surface chemistry,” Dai said. “In other words, you don’t get this result just by attaching drugs to any nanotubes.”

The researchers used nanotubes that they had coated with polyethylene glycol (PEG), a common ingredient in cosmetics. The PEG they used was a form that has three little branches sprouting from a central trunk. Stuffing the trunks into the linked hexagonal rings that make up the nanotubes created a visual effect that Dai described as looking like rolled-up chicken wire with feathers sticking out all over. The homespun sounding appearance notwithstanding, the nanotubes proved to be highly effective delivery vehicles when the researchers attached the paclitaxel to the tips of the branches.

Dai’s team has found in earlier work (Proceedings of the National Academy of Sciences, Vol. 105, No. 5, 1410-1415, Feb. 5, 2008) that coating nanotubes with PEG was an effective way to keep the nanotubes circulating in the bloodstream for up to 10 hours, long enough to find their way to the target location and much longer than free medication would circulate. Although attaching the paclitaxel to the PEG turned out to reduce the circulation time, it proved to still be long enough to deliver a highly effective dose inside the tumor cells.
All blood vessel walls are slightly porous, but in healthy vessels the pores are relatively small. By tinkering with the length of the nanotubes, the researchers were able to tailor the nanotubes so that they were too large to get through the holes in the walls of normal blood vessels, but still small enough to easily slip through the larger holes in the relatively leaky blood vessels in the tumor tissue.

That enabled the nanotubes to deliver their medicinal payload with tremendous efficiency, throwing a therapeutic wrench into the cellular means of reproduction and thus squelching the hitherto unrestrained proliferation of the tumor cells.
Dai said that the technique holds potential for delivering a range of medications and that it may also be possible to develop ways to channel the nanotubes to their target even more precisely.

“Right now what we are doing is so-called ‘passive targeting,’ which is using the leaky vasculature of the tumor,” he said. “But a more active targeting would be attaching a peptide or antibody to the nanotube drug, one that will bind more specifically to the tumor, which should further enhance the treatment efficacy.”
Dai’s team is already at work developing more targeted approaches, and he is optimistic about the potential applications of nanotubes.

“We are definitely hoping to be able to push this to practical applications into the clinic. This is one step forward,” he said. “But it will still take time to truly prove the efficacy and the safety.”
The work was funded by the NIH-National Cancer Institute Center for Cancer Nanotechnology Excellence focused on Therapeutic Response at Stanford, a Stanford Bio-X Initiative Grant, NIH-National Cancer Institute Grant and a Stanford Graduate Fellowship. Collaborators on this work included Assistant Professor Shawn Chen’s group in the Stanford Department of Radiology.

August 14, 2008Oxantium Ventures closed a B Series funding round with RF Nano Corporation , a developer of radio frequency devices from carbon nanotubes. Dr. Richard Wirt, a managing director at Oxantium, joins RF Nano’s Board. Oxantium led the $8 million investment, which is syndicated with a southern California based venture capital firm.
RF Nano, based in Orange County, CA, is commercializing the application of carbon-based nanotube technology to RF devices . The result is high power density, discrete and embedded devices targeted at the $60 billion analog and mixed signal communications markets. These devices will improve the performance of military and aerospace systems as well as wireless and data processing products.
Dr. Newton Howard, Oxantium venture’s managing director commented on the investment, “With power densities 100 times greater than silicon and 20 times greater than gallium arsenide, intrinsic cutoff frequencies in the terahertz, inexpensive growth, and the ability to integrate with CMOS, we believe that RF Nano has the potential to radically extend current analog and mixed signal capabilities and open up entirely new product areas in the electronics industry that to date have been limited by the performance and cost of traditional silicon and GaAs solutions.”
RF Nano’s nanotube process technology was developed at the University of California, Irvine by Professor Peter Burke , the company’s co-founder and chief technology officer. The company is targeting the sampling of its first products for the first quarter of 2009.

August 13, 2008Shocking Technologies, Inc. is preparing to ramp up commercial scale production by moving to a new 51,000 square foot facility in San Jose, California. The facility will house Shocking’s nanotechnology research and development labs as well as manufacturing for its XStatic voltage switchable dielectric material.

When designed into a PCB or Semiconductor package, the XStatic material can protect electronic products up to 30KV from electrostatic discharge. The company has successfully demonstrated the technology in cell phones, memory devices, and semiconductor packages.
“We are very excited to be moving into our new home in San Jose, as it is time to bring our larger scale manufacturing online,” said Lex Kosowsky, president & CEO. “While we will continue to house some of our development at our partner Sanmina-SCI, who helped us incubate the technology, it is important we make the next step and put in large scale manufacturing for our materials to insure our customers adequate supply as we grow.”

The new facility will house a state of the art analytical lab, nanotechnology development lab, large scale XStatic polymer manufacturing, as well as space for further application development of its VSDM. The plant will also house the company’s sales and administrative offices.

August 13, 2008 ZEOX Corporation’s subsidiary, ZEOX Performance Materials, LLC (ZPM), a developer of products utilizing nanostructured materials for coatings, nanoparticle reinforced composites, and nanostructured polymers, has developed a new class of surfactant technology based on a newly developed molecular structure, called Lipotrope. Surfactants are surface active agents required in the chemical processing of many industrial products.

ZPM states that the molecular architecture of Lipotrope represents a technology departure from current products offered by surfactant manufacturers, and ir expects it to find broad industrial applications including the dispersion of water-soluble dyes and other additives into plastics and as key components in the production of high-performance polymer nanocomposites.
ZEOX has stated that Lipotrope will improve the efficiency of polymer additives, including pigments and stabilizers, and that it can effectively modify the surfaces of silicate minerals that enhance dispersion to be readily achieved in hydrophobic polymers, such as polyethylene and polypropylene homopolymers. These “exfoliated” composites provide next generation performance for advanced materials and coatings. Lipotrope surfactants are applied through a solid-state process, thereby reducing processing costs, process complexity and environmental impact.

This technology development has evolved from over 20 years of research at Argonne National Laboratory in Chicago and ZPM. ZEOX is an early stage development company whose ambition is to become a leading supplier of high-performance zeolites sourced from unique, natural deposits in North America.

August 12, 2008Silicon Genesis Corporation (SiGen), a provider of engineered substrate process technology, has signed a collaboration and equipment supply agreement with Renewable Energy Corporation (REC) (www.recgroup.com), a producer of polysilicon and wafers for solar applications in Oslo, Norway. Under the terms of the agreement, REC will evaluate thin-PV substrate samples made using SiGen’s PolyMax “kerf-free” wafering process. REC will also collaborate with SiGen to develop and optimize high-volume manufacturing (HVM) equipment and develop silicon ingot shaping requirements.
The agreement also includes commercial terms under which SiGen will supply an allocation of its HVM production equipment to REC.

SiGen has successfully completed an initial phase under the agreement by delivering to REC 125mm wafer samples of 50um thickness with excellent yield, mechanical and electrical characteristics. A design phase is ongoing to develop high-volume manufacturing equipment that can convert silicon ingots into thin silicon wafers ranging from 150um to 50um in thickness.
SiGen will present details of the PolyMax wafering process at the upcoming 23rd European Photovoltaic Conference (September 1-5, Valencia Spain). A joint paper with REC will also be presented describing major high-volume manufacturing system design guidelines.
Francois Henley, president and CEO of Silicon Genesis, said: “We are very pleased to be working with REC to evaluate our PolyMax wafering technology. REC, as the world’s leading vertically integrated manufacturer of photovoltaic materials, cells and modules is an ideal partner in this endeavor.”

“We are excited to work together with SiGen to develop and industrialize this new technology,” added Erik Sauar, senior vice president technology and CTO of REC. “Provided we can reach sufficient scalability and productivity in the new manufacturing equipment and that all the remaining developments are equally successful as the first phase, this should enable us to manufacture next-generation PV wafers and cells with high efficiency at an even lower cost than with today’s sawing processes.”

The PE-200-RIE Convertible, from Plasma Etch, is a convertible RIE configuration of the companies PE-200 plasma etching/cleaning system. Designed for anisotropic etching of nitrides, oxides, and polyimide, the system features a 13

BY KAVEH AZAR, Ph.D. Advanced Thermal Solutions

Higher frequency signal processing and limits on the passage of electrons through metallic media have forced the electronics industry to use smaller component packages. But high-power dissipation from smaller packaging creates heat fluxes beyond conventional cooling technologies. Engineers must cool these devices at either the package or system level. These challenges must be addressed by designers when choosing or developing successful solutions.

Take, for instance, power and frequency. Device power dissipation as a function of frequency and number of gates is shown below:

    Power Dissipation (W) ~ Switching Power
    (