Category Archives: Materials and Equipment

May 1, 2012 — The top three outsourced semiconductor assembly and test services (OSATS) providers raised 2012 capital expenditures (capex) during their earnings reports, from initial plans announced in January, report analysts at Citi.

To increase capacity due to mobility growth, Amkor (AMKR) raised capex from $300M to $550M; Advanced Semiconductor Engineering Incorporated (ASE) raised capex from $725M to $800M; and Siliconware Precision Industries Co. Ltd. (SPIL) raised capex from $350M to $600M. Collective, the three companies increased 2012 capex by $575M or 42% vs. January plans.

April 25, 2012 — Nordson ASYMTEK, a fluid dispensing, coating, and jetting technology supplier, uncrated the NexJet System for jetting, with a newly designed jet cartridge and new software control for semiconductor packaging applications such as flip chip underfill, chip scale packages (CSP), ball grid arrays (BGA), package-on-package (PoP) underfill, precise coating, and adhesive dispensing.

The Genius Jet Cartridge one-piece jet is quickly and easily removed without tools, much like an ink jet cartridge. The cartridge dispenses up to 50 million cycles before a replacement is necessary, depending upon the application. It has built-in memory to store usage data like the number of cycles and cartridge type, which is communicated to the jetting tool and compared to the recipe for process control.

The NexJet System

April 23, 2012 – GLOBE NEWSWIRE — Hexagon Metrology released the Optiv Classic 321GL tp benchtop vision-measuring metrology system for the North American market. It suits electronics and precision parts inspection, including micro-holes, fiber optics, filters, and more.

It features 6.5x motorized CNC zoom optics for 0.002mm accuracy. Touch probes can be added for multi-sensor measurement. The Classic 321GL tp is the smallest model in the Optiv product line. It offers calibrated lighting, a high-resolution color CCD camera, a laser locator and an 8-segment LED dual angle ring light. The LED ring and software controls for red/green/blue sensitivity enable better edge detection, including for colored parts where edges can be difficult to capture.

The Classic 321GL tp includes PC-DMIS Vision image processing software and full online 3D CAD capabilities for live programming of the machine to compare measured values to nominals. The software’s MultiCapture feature finds all 2D characteristics in the field of view, measures them simultaneously, and moves the camera for the next cluster, optimizing the path of stage movement. Inspection speeds can increase by 50% or more.

The tool is made on a granite base with mechanical bearings.

Hexagon Metrology is part of the Hexagon AB Group. Hexagon is a leading global provider of design, measurement and visualization technologies. Learn more at www.hexagon.com.

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April 19, 2012 – PRNewswire — Texas Instruments Incorporated (TI, NASDAQ: TXN) awarded 15 of its 12,000 suppliers with Supplier Excellence Awards (SEA) for delivering outstanding service and support, based on cost, environmental responsibility, technology responsiveness, assurance of supply, and quality to support TI’s semiconductor and MEMS manufacturing and packaging work.

Also read: Intel’s (INTC) top suppliers and Analog Devices’ (ADI) top suppliers

Texas Instruments’ SEA recipients include:

  • Asahi Engineering Co., Ltd. – IC molding equipment
  • Covalent Silicon Corporation – Silicon
  • Dainippon Screen Mfg. Co., Ltd. – Capital equipment, spares and services
  • Heraeus Quartz America LLC – Quartz
  • Hitachi Data Systems – IT storage systems
  • Hitachi High Technologies Americas, Inc, Semiconductor Equipment Division – Etch capital equipment, spare parts and services
  • InTEST Corporation – Docking, manipulator, and wafer probing interface products
  • Jiangyin Changdian Advanced Packaging Co., Ltd. – External manufacturing
  • Kinpo Electronics, Inc. – Contract manufacturer
  • Kintetsu World Express, Inc. – Shanghai PDC services
  • MBG Consulting – Lease administration
  • MM Solutions AD – Multimedia IP and system solutions
  • Tanaka Denshi Kogyo k.k. – Bonding wire
  • Teradyne, Inc. – Automated test equipment
  • Unimicron Technology Corp. – Rigid substrates

"The past 12 months have been uniquely challenging for the semiconductor industry in terms of the unexpected occurrence of natural disasters, threatening impact to supply," noted Rob Simpson, VP of TI’s Worldwide Procurement and Logistics.

Texas Instruments makes semiconductors. Learn more at www.ti.com.

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April 16, 2012 — Micro Control Company uncrated the HPB-5C High-Power Burn-In System, with variable airflow control for active thermal control of each device under test. The HPB-5C provides individual temperature control to each device under test. The tool can burn-in and test up to 150W devices.

Test tool operators can adjust the speed of the oven blower during system operation on a device by device basis as required. Active thermal control provides precise temperature control, up to 150

Blogger Mike Fury reports from the MRS Spring 2012 meeting in San Francisco. Highlights from the fourth day: electronic skin, energy storage with nanowires, printable inks, gas sensing, inkjet printing, semiconductor polymers for organic devices, CNTs, OFETs, touch screen fabrics, and the coffee breaks.

The fifth and final day of the MRS Spring 2012 meeting opened Friday the 13th at Moscone West in San Francisco opened under bright mostly sunny skies following an evening of thunderstorms and torrential rain. Thunderstorms are not a common event in San Francisco, and this one brought some spectacular lightning strikes on the Transamerica pyramid and the Oakland Bay Bridge. The lightning rods worked as advertised. Praise Science!!

K9.1 Ali Javey of UC Berkeley opened with a discussion of printed nanomaterials for artificial electronic skin (which might imply that work is underway on organic electronic skin, but I suspect that this is not actually the case) and its ability to detect and respond to external stimuli. Many types of basic sensing elements can now be integrated into thin film organic electronics. For example, covering an airliner with a strain gauge skin and detecting early signs of structural weakening might reduce the incidence of fuselages peeling off in flight in our aging fleet. Many of his structures are based on CNT TFT on pollyimide, with mobilities of 40-50cm2/Vs. Stretchability up to 10% is achieved by laser ablating holes in the substrate much like honeycomb decoration paper, and placing the TFT devices at substrate locations that have minimum strain when stretched. A pressure sensing honeycomb glove has a tactile sensitivity and response comparable to human skin. Additional work is underway on programmable, reconfigurable materials from which a 3D shape can be self-assembled from a planar substrate by patterning folds and junctions and activating them in the proper sequence — effectively nano origami. Such devices have applications as actuators of all kinds and can respond to temperature, moisture, pH or light. Imagine curtains that can close themselves when the run is bright.

N11.1 Liqiang Mai of the Wutan U (China) – Harvard Joint Nano Key Lab talked about energy storage at several scales using nanowire electrochemical devices. A test device was developed for characterizing the battery electrode properties of a single nanowires with an ion gel electrolyte. Materials studies include VO2, MoO3, FeSe2, MnMoO4, CoMoO4 and Li-doped variants of these. One intriguing variant was CoMoO4 nanowires that were grown on MnMoO4 nanowires that were somewhat larger, resulting in a porcupine structure. The specific area increased to 54.06m2/g compared to <10 for the MnMoO4 substrate itself. Functional battery work remains to be done, but a strategy for increasing electroactivity has been nicely demonstrated.

J15.2 Darin Laird of Plextronics described some printable inks for OPV and OPD (diode detector) devices and their integrated applications. Minimization of dark current is critical for an effective OPD. Current level for a sample Ca/Al electrode device is >100nA/cm2 at 1V, but a proprietary cathode material brings this down to 66±38. The Plextronics PV2000 OPV ink is based on bis-indene, which is a derivatized C60 buckyball that was developed and commercialized in 2006 (contrary to reports elsewhere of first introduction of this material several years later).

BB10.6 Ulrich Simon of Aachen U (Germany) talked about polyol-mediated synthesis and high throughput impedance spectroscopy screening of gas sensing metal oxide nanoparticles. In addition to the familiar list of common industrial and household gases that are sensed to control safety and comfort issues, there are a host of more exotic gases in the medical and security fields that are garnering increased attention. Nanocrystals are desirable for such applications due to their higher active surface area and thus sensitivity. Over 200 metal oxides have been synthesized and screened using a high throughput experimentation protocol developed in his lab. Thick film amorphous oxides are synthesized in parallel on a 64 cell multi-electrode ceramic substrate and fired concurrently, mimicking the use of parallel analysis for drug screening.

K9.7 Craig Arnold of Princeton U demonstrated the utility of laser-induced blister dynamics for actuating inkjet printing of organometallic molecules for electroluminescent devices. His modeling of multicomponent inks shows that inadequate initiation of the drop formation can result in droplet formation of a surface solvent layer without incorporating a representative portion of pigment molecules in the correct proportions. This printing method is particularly suitable for molecules that cannot survive printing with conventional inkjet methods.

Z12.8 Christine Luscombe of U Washington developed a variety of star-shaped and hyperbranched semiconducting polymers for organic electronic devices using a Ni(PPh3)4 ligand exchange protocol to control conformation and molecular weight distribution. A hyperbranched structure is a less regular analog of a dendrimer. Absorbance ~550nm is 2x greater for the star P3HT than for the corresponding linear P3HT, and preliminary but promising OPV performance was shown.

EE10.1 Sung Hun Jin from U Illinois Urbana (John Rogers group) presented a method for aligning SWCNT and subsequently removing the metallic tubes (m-CNT) to leave only semiconducting tubes (S-CNT). After aligning the tubes, they are pinned at each end with an electrode, and the entire CNT array is coated with an organic film. When a current is applied, heating resistance of the m-CNT melts the coating and exposes them to the surface. Plasma ashing then removes the exposed m-CNT; when the coating is stripped, a high performance array of only S-CNT remains. The technique has been dubbed ‘metallic nanotube removal’ or MNR, and was shown to be scalable to a channel nearly 1mm long. A near term objective is to use this S-CNT array to fabricate high frequency RF devices.

EE10.2 Chongwu Zhou of USC explained a method for DNA separation of CNT seeds based on chirality, followed by a catalyst-free CVD cloning technique to extend the seeds from 0.3µm to 30-40µm in length. This chirality-controlled CNT cloning in combination with semiconductor enrichment enabled fabrication of separated nanotube (SN-) TFT devices with 98% yield, 25kΩ/square sheet resistance, 10µA/µm current density and 67cm2/Vs mobility across 3 inch Si/SiO2 wafers. Another demonstration produced a working display element with 500 pixels and 1,000 transistors.

K10.4 Shimpei Ono of the Central Research Institute of the Electric Power Industry (Japan) described a high performance OFET with ultra-thin gate dielectric. The device uses rubrene single crystals with a 50nm ALD HfO2 gate dielectric and Au metal gate. The HfO2 dielectric exhibits a high carrier accumulation of 5×1013cm-2, 5x the number of charge carriers as a comparable SiO2 device. The high current at 2V applied voltage indicates a high quality HfO2 dielectric. Top gate devices are stable in air, while inverted bottom gate devices with the rubrene exposed to air are not.

K10.5 Toshitake Takahashi of UC Berkeley talked about smart skin as one implementation of a CNT active matrix backplane for conformal electronics and sensors using semiconductor-enriched CNT scheme. The CNT network density is controlled by managing the rate of solvent spreading and evaporation as the mixed S-CNT (~99%) and m-CNT source material is applied drop wise to the polyimide substrate. Electrical properties showed no degradation in bending down to a 2.5mm radius. The flexible, stretchable substrate with devices fabricated at the points of minimum substrate strain is the same as described in K9.1 above.  The transistors showed Ion/Ioff ~104 and a mobility of 20cm2/Vs with an ALD Al2O3 gate oxide.

K10.6 Kazuhiro Kudo of Chiba U (Japan) talked about printed common gate vertical channel transistors using nanoimprint patterning. Evaporated devices comprised pentacene channels, 120nm parylene-C gate dielectric, Al gate, and Au S/D. An analogous wet process device deposited all active layers in a planar stack, then formed two vertical channels using imprint to create a depressed channel with a vertical sidewall on each side. SVC-OFETs can be used for active matrix displays and RFID tags with active loop antennae.

E11.6 Umberto Celano of IMEC talked about Cu migration in conductive bridging memories. The CuTe layer exhibited improved homogeneity with the addition of a Ti interlayer. The migration of Cu into the solid electrolyte is confirmed as the driving mechanism for device operation.

K10.8 Hiam Sinno of Linkoping U (Sweden) used a block copolymer as a surface modifier improving the printing of polyelectrolyte gated OFETs. The problem arises because the electrolyte (e.g. PSSH) is typically hydrophilic, and the semiconductor (e.g. P3HT) is hydrophobic. The block copolymer treatment enhances the surface presence of thiophene components in the PSSH. The electrical functionality of the transistor was not impacted. This electrolyte gated OFET device has the best acronym of the week: EGOFET. Freud would be pleased.

K10.9 Peyman Servati of U British Columbia wrapped up the symposium with a presentation on transparent, flexible composite nanofiber electronics for touch screen fabrics as a replacement for ITO. Candidate materials include SWCNT, Ag nanowires and graphene, but each has its down side. The approach taken here is to mimic natural fiber networks by using an electrospinning process on a solution of composite nanofibers (CNF) where the CNF can comprise several different types of materials. The spray head can induce some level of nanotube alignment which is useful for enhancing performance. Following spinning, the fibers are carbonized at ~700°C, producing a conductive CNF mesh. The resulting mesh can be 80% transparent at 100Ω/o. Early OPV devices performed at 2% efficiency vs. 4% for a comparable ITO device, due to surface roughness issues that remain to be addressed.

Managing the schedule for so many concurrent technical sessions is always a challenge, especially given the preponderance of academic speakers in this conference; I refer of course to the notion of herding cats. One element of the conference that always runs like clockwork is the coffee breaks. They start on time, which is a great reliability feature since not all symposia are coordinated to exactly the same break times. Equally as impressive, but with the opposite pleasure polarity, is the fact that they end precisely on time. If Seinfeld were still producing new episodes, I would expect the iconic soup Nazi to be joined before long by these coffee Nazis. Ruthless but precise. Just doing their jobs.

April 13, 2012 — Georgia Institute of Technology researchers have used magnetic repulsion force as a fixtureless, noncontact tool for measuring the adhesion strength between thin films in microelectronic devices, photovoltaic cells, and micro electro mechanical systems (MEMS).

The magnetically actuated peel test (MAPT) could help electronics engineers understand and predict delamination/debonding, and improve resistance to thermal and mechanical stresses.

Figure 1. A specimen fabricated for the magnetically actuated peel test (MAPT). The silver cylinder in the center is the permanent magnet. SOURCE: Thin Solid Films.

The right materials will enable smaller, higher-performance, reliable electronic devices, said Suresh Sitaraman, a professor in the George W. Woodruff School of Mechanical Engineering at the Georgia Institute of Technology. “This technique would help manufacturers know that their products will meet reliability requirements, and provide designers with the information they need to choose the right materials to meet future design specifications over the lifetimes of devices.”

Thermal stresses occur when different layers within an electronic device have mismatched coefficients of thermal expansion (CTE), and will cause layers to separate. Researchers want to know if these layers will separate as the device is used over time, eventually causing failure, said Sitaraman.

Figure 2. Georgia Tech School of Mechanical Engineering professor Suresh Sitaraman (left) and doctoral student Gregory Ostrowicki (right) examine a specimen (seen in Figure 1) fabricated for the magnetically actuated peel test (MAPT). SOURCE: Thin Solid Films.

Sitaraman and doctoral student Gregory Ostrowicki have used their technique to measure the adhesion strength between layers of copper conductor and silicon dioxide (SiO2) insulator. They also plan to use it to study fatigue cycling failure, which occurs over time as the interface between layers is repeatedly placed under stress. The technique may also be used to study adhesion between layers in photovoltaic systems and in MEMS devices.

The Georgia Tech researchers used standard microelectronic fabrication techniques to grow layers of thin films that they want to evaluate on a silicon wafer. At the center of each sample, they bonded a tiny permanent magnet made of nickel-plated neodymium (NdFeB), connected to three ribbons of thin-film copper grown atop silicon dioxide on a silicon wafer.

The sample was then placed into a test station comprising an electromagnet below the sample and an optical profiler above. Voltage supplied to the electromagnet was increased over time, creating a repulsive force between the like magnetic poles. Pulled upward by the repulsive force on the permanent magnet, the copper ribbons stretched until they finally delaminated.

With data from the optical profiler and knowledge of the magnetic field strength, the researchers can provide an accurate measure of the force required to delaminate the sample. The magnetic actuation has the advantage of providing easily controlled force consistently perpendicular to the silicon wafer.

Many samples can be made at the same time on the same wafer, generating a quantity of adhesion data in a timely fashion.

To study fatigue failure — a common failure mode wherein delamination occurs over time with repeated heating and cooling cycles, Sitaraman and Ostrowicki plan to cycle the electromagnet’s voltage on and off. “A lot of times, layers do not delaminate in one shot,” Sitaraman said. “We can test the interface over hundreds or thousands of cycles to see how long it will take to delaminate and for that delamination damage to grow.”

The test station fits into an environmental chamber, allowing the researchers to evaluate harsh-environment electronics under the effects of high temperature and/or high humidity. “We can see how the adhesion strength changes or the interfacial fracture toughness varies with temperature and humidity for a wide range of materials,” Sitaraman explained.

Sitaraman and Ostrowicki have studied thin film layers about one micron in thickness, but say their technique will work on layers that are of sub-micron thickness. Because their test layers are made using standard microelectronic fabrication techniques in Georgia Tech’s clean rooms, Sitaraman believes they accurately represent the conditions of real devices. These are representative processes and representative materials, mimicking the processing conditions and techniques used in actual microelectronics fabrication.

“As we continue to scale down the transistor sizes in microelectronics, the layers will get thinner and thinner,” he said. “Getting to the nitty-gritty detail of adhesion strength for these layers is where the challenge is. This technique opens up new avenues.”

The research has been supported by the National Science Foundation, and was reported in the March 30, 2012 issue of the journal Thin Solid Films.

Learn more about Georgia Institute of Technology at http://www.gatech.edu/.

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April 13, 2012 — Intel Corporation (NASDAQ:INTC) announced 9 winners of the company’s Supplier Continuous Quality Improvement (SCQI) award for outstanding commitment to quality and performance excellence. 19 companies received Intel’s Preferred Quality Supplier (PQS) awards and 2 were recognized with Achievement Award.

The SCQI winners support Intel’s wafer fab and packaging, or related business, with these products and services:

  • Hitachi High-Technologies Corporation – etch and metrology equipment.
  • Hitachi Kokusai Electric Inc. – diffusion furnaces.
  • JSR Corporation – advanced photoresists, packaging materials and chemical mechanical planarization consumables.
  • JX Nippon Mining & Metals – sputtering targets for physical vapor deposition process.
  • Senju Metal Industry Co., Ltd. – soldering material.
  • SHINKO ELECTRIC INDUSTRIES CO., LTD. – plastic laminated package and heat spreaders.
  • Siltronic – polished and epitaxial silicon wafers.
  • SUMCO Corporation – 200mm and 300mm polished epitaxial silicon wafers.
  • Tokyo Electron Limited (TEL) – coater-developers, dry etch, wet etch and test systems.

Brian Krzanich, SVP and COO, outlined the parameters for SCQI awards as continuous improvement in innovation, affordability, agility, customer responsiveness, and environmental sustainability goals. Intel’s SCQI program encourages key suppliers to strive for excellence and continuous improvement. To qualify for SCQI status, suppliers must score at least 95% on a report card that assesses performance and ability to meet cost, quality, availability, delivery, technology and environmental, social and governance goals. Suppliers must also achieve 90% or greater on a challenging improvement plan and demonstrate solid quality and business systems. Additional information about the SCQI program is available at www.intel.com/go/quality.

Intel (NASDAQ:INTC) is a world leader in computing innovation. The company designs and builds the essential technologies that serve as the foundation for the world’s computing devices. Learn more at www.intel.com.

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