Category Archives: Wafer Level Packaging

SAN JOSE, Calif. — mCube, provider of MEMS motion sensors, today announced the industry’s first 3-axis accelerometer which is less than a cubic millimeter in total size (0.9mm3). The MC3571 is only 1.1×1.1×0.74mm in size making it 75% smaller than current 2x2mm accelerometers on the market today, enabling developers to design high-resolution 3-axis inertial solutions for products that require ultra-small sensor form factors.

mCube_MC3571_AccelerometerThe MC3571 features a Wafer Level Chip Scale Package (WLCSP), making it smaller than a grain of sand. This achievement marks a major innovation milestone in the MEMS sensor industry and opens up new design possibilities for the next generation of sleek new mobile phones, surgical devices, and consumer products.

“The new MC3571 truly represents mCube’s vision of delivering a high-performance motion sensor in less than a cubic millimeter size,” said Ben Lee, president and CEO, mCube. “This advancement demonstrates how our monolithic technology can unleash amazing possibilities for designers to create exciting new products that could never be possible with today’s standard 2x2mm sensors.”

“mCube is the first company we’ve seen with a 1.1×1.1mm integrated MEMS+CMOS accelerometer and stretches once again the limits of miniaturization establishing new standards for the industry,” said Guillaume Girardin, Technology & Market Analyst MEMS & Sensors at Yole Développement (Yole). And his colleague, Thibault Buisson, Technology & Market Analyst, Advanced Packaging added: “Clearly, there is a growing trend among consumer companies to transition to wafer-level CSP packaging designs and with the MC3571 inertial motion sensor, mCube is at the forefront of this market evolution and at Yole, we are curious to see how competition will react.”

The high-resolution 14-bit, 3-axis MC3571 accelerometer is built upon the company’s award-winning 3D monolithic single-chip MEMS technology platform, which is widely adopted in mobile handsets with over 100 million units shipped. With the mCube approach, the MEMS sensors are fabricated directly on top of IC electronics in a standard CMOS fabrication facility. Advantages of this monolithic approach include smaller size, higher performance, lower cost, and the ability to integrate multiple sensors onto a single chip.

About the MC3571 Accelerometer

MC3571 is a low-noise, integrated digital output 3-axis accelerometer, which features the following:

  • 8, 10, or 14-bit resolution;
  • Output Data Rates (ODR) up to 1024Hz;
  • Selectable interrupt modes via an I2C bus;
  • Requires only a single external passive component, compared to competitive offerings requiring 2 or more.

Samples of the world’s smallest 1.1×1.1mm WLCSP accelerometer are available to select lead customers now with volume production scheduled for the second quarter of 2016.

 

SEMI recently completed its annual silicon shipment forecast for the semiconductor industry. This forecast provides an outlook for the demand in silicon units for the period 2015–2017. The results show polished and epitaxial silicon shipments totaling 10,042 million square inches in 2015; 10,179 million square inches in 2016; and 10,459 million square inches in 2017 (refer to table below). Total wafer shipments this year are expected to exceed the market high set in 2014 and are forecast to continue shipping at record levels in 2016 and 2017.

“2015 has been a record-breaking year for silicon shipments, attributed primarily to larger diameter wafers,” said Denny McGuirk, president and CEO of SEMI. “The outlook for the next two years is measured, but continues on a modest growth path.”

2015 Silicon Shipment Forecast
Total Electronic Grade Silicon Slices* – Does not Include Non-Polished
(Millions of Square Inches, MSI)

Actual Forecast
2013 2014 2015 2016 2017
MSI 8,834 9,826 10,042 10,179 10,459
Annual Growth 0% 11% 2% 1% 3%

Source: SEMI, October 2015; * Shipments are for semiconductor applications only and do not include solar applications

Silicon wafers are the fundamental building material for semiconductors, which in turn, are vital components of virtually all electronics goods, including computers, telecommunications products, and consumer electronics. The highly engineered thin round disks are produced in various diameters (from one inch to 12 inches) and serve as the substrate material on which most semiconductor devices or “chips” are fabricated.

All data cited in this release is inclusive of polished silicon wafers, including virgin test wafers and epitaxial silicon wafers shipped by the wafer manufacturers to the end-users. Data do not include non-polished or reclaimed wafers.

For more information on the SEMI Worldwide Silicon Wafer Shipment Statistics, visit www.semi.org/en/MarketInfo/SiliconShipmentStatistics.

A report that resulted from a workshop funded by Semiconductor Research Corporation (SRC) and National Science Foundation (NSF) outlines key factors limiting progress in computing—particularly related to energy consumption—and novel device and architecture research that can overcome these barriers. A summary of the report’s findings can be found at the end of this article; the full report can be accessed here.

The findings and recommendations in the report are in alignment with the nanotechnology-inspired Grand Challenge for Future Computing announced on October 20 by the White House Office of Science and Technology Policy. The Grand Challenge calls for new approaches to computing that will operate with the efficiency of the human brain. It also aligns with the National Strategic Computing Initiative (NSCI) announced by an Executive Order signed by the President on July 29.

Energy efficiency is vital to improving performance at all levels. This includes from devices and transistors to large IT systems, as well from small sensors at the edge of the Internet of Things (IoT) to large data centers in cloud and supercomputing systems.

“Fundamental research on hardware performance, complex system architectures, and new memory/storage technologies can help to discover new ways to achieve energy-efficient computing,” said Jim Kurose, the Assistant Director of the National Science Foundation (NSF) for Computer and Information Science and Engineering (CISE). “Partnerships with industry, including SRC and its member companies, are an important way to speed the adoption of these research findings.”

Performance improvements today are limited by energy inefficiencies that result in overheating and thermal management issues. The electronic circuits in computer chips still operate far from any fundamental limits to energy efficiency, and much of the energy used by today’s computers is expended moving data between memory and the central processor.

At the same time as increases in performance slow, the amount of data being produced is exploding. By 2020, an estimated 44 zettabytes of data (1 zettabyte equals 1 trillion gigabytes) will be created on an annual basis.

“New devices, and new architectures based on those devices, could take computing far beyond the limits of today’s technology. The benefits to society would be enormous,” said Tom Theis, Nanoelectronics Research Initiative (NRI) Executive Director at SRC, the world’s leading university-research consortium for semiconductor technologies.

Inspired by the neural architecture of a macaque brain, this neon swirl is the wiring diagram for a new kind of computer that, by some definitions, may soon be able to think. (Credit: Emmett McQuinn, IBM Research - Almaden)

Inspired by the neural architecture of a macaque brain, this neon swirl is the wiring diagram for a new kind of computer that, by some definitions, may soon be able to think. (Credit: Emmett McQuinn, IBM Research – Almaden)

In order to realize these benefits, a new paradigm for computing is necessary. A workshop held April 14-15, 2015 in Arlington, Va., and funded by SRC and NSF convened experts from industry, academia and government to identify key factors limiting progress and promising new concepts that should be explored. The report being announced today resulted from the workshop discussions and provides a guide to future basic research investments in energy-efficient computing.

The report builds upon an earlier report funded by the Semiconductor Industry Association, SRC and NSF on Rebooting the IT Revolution.

To achieve the Nanotechnology Grand Challenge and the goals of the NSCI, multi-disciplinary fundamental research on materials, devices and architecture is needed. NSF and SRC, both individually and together, have a long history of supporting long-term research in these areas to address such fundamental, high-impact science and engineering challenges.

Report Findings

Broad Conclusions

Research teams should address interdisciplinary research issues essential to the demonstration of new device concepts and associated architectures. Any new device is likely to have characteristics very different from established devices. The interplay between device characteristics and optimum circuit architectures therefore means that circuit and higher level architectures must be co-optimized with any new device. Devices combining digital and analog functions or the functions of logic and memory may lend themselves particularly well to unconventional information processing architectures. For maximum impact, research should focus on devices and architectures which can enable a broad range of useful functions, rather than being dedicated to one function or a few particular functions.

Prospects for New Devices

Many promising research paths remain relatively unexplored. For example, the gating of phase transitions is a potential route to “steep slope” devices that operate at very low voltage. Relevant phase transitions might include metal-insulator transitions, formation of excitonic or other electronic condensates, and various transitions involving structural degrees of freedom. Other promising mechanisms for low-power switching may involve transduction. Magnetoelectric devices, in which an external voltage state is transduced to an internal magnetic state, exemplify the concept. However, transduction need not be limited to magnetoelectric systems.

In addition to energy efficiency, switching speed is an important criterion in choice of materials and device concepts. For example, most nanomagnetic devices switch by magnetic precession, a process which is rather slow in the ferromagnetic systems explored to date. Magnetic precession switching in antiferromagnetic or ferrimagnetic materials could be one or more orders of magnitude faster. Other novel physical systems could be still faster. For example, electronic collective states could, in principle, be switched on sub-picosecond time scales.

More generally, devices based on computational state variables beyond magnetism and charge (or voltage) could open many new possibilities.

Another relatively unexplored path to improved energy efficiency is the implementation of adiabatically switched devices in energy-conserving circuits. In such circuits, the phase of an oscillation or propagating wave may represent digital state; devices and interconnections must together constitute circuits that are non-dissipative. Nanophotonic, plasmonic, spin wave or other lightly damped oscillatory systems might be well-suited for such an approach. Researchers should strive to address the necessary components of a practical engineering solution, including mechanisms for correction of unavoidable phase and amplitude errors.

Networks of coupled non-linear oscillators have been explored for non-Boolean computation in applications such as pattern recognition. Potential technological approaches include nanoelectromechanical, nanophotonic, and nanomagnetic oscillators. Researchers should strive for generality of function and should address the necessary components of a practical engineering solution, including devices, circuits, and architectures that allow reliable operation in the presence of device variability and environmental fluctuations.

Prospects for New Architectures

While appropriate circuits and higher level architectures should be explored and co-developed along with any new device concept, certain novel device concepts may demand greater emphasis on higher-level architecture. For example, hysteretic devices, combining the functions of non-volatile logic and memory, might enhance the performance of established architectures (power gating in microprocessors, reconfiguration of logic in field programmable gate arrays), but perhaps more important, they might play an enabling role in novel architectures (compute in memory, weighting of connections in neuromorphic systems, and more). As a second example, there has been great progress in recent years in the miniaturization and energy efficiency of linear and non-linear photonic devices and compact light emitters. It is possible that these advances will have their greatest impact, not in the ongoing replacement of metal wires by optical connections, but rather in enabling new architectures for computing. Computation “in the network” is one possible direction. In general, device characteristics and architecture appear to be highly entwined in oscillatory or energy-conserving systems. Key device characteristics may be inseparable from the coupling (connections) between devices. For non-Boolean computation, optimum architectures and the range of useful algorithms will depend on these characteristics.

In addition to the examples above, many other areas of architectural research might leverage emerging device concepts to obtain order of magnitude improvements in the energy efficiency of computing. Research topics might include architectures for heterogeneous systems, architectures that minimize data movement, neuromorphic architectures, and new approaches to Stochastic Computing, Approximate Computing, Cognitive Computing and more.

Slideshow: 2015 IEDM Preview


October 20, 2015
The 2015 IEDM Conference will be held in Washington DC.

The 2015 IEDM will be held in Washington DC.

This year marks the 61st annual IEEE International Electron Devices Meeting (IEDM). It is arguably the world’s pre-eminent forum for reporting technological breakthroughs in semiconductor and electronic device technology, design, manufacturing, physics, and modeling. The conference focuses not only on devices in silicon, compound and organic semiconductors, but also in emerging material systems.

As usual, Solid State Technology will be reporting insights from bloggers and industry partners during the conference. This slideshow provides an advance look at some of the most newsworthy topics and papers that will be presented at this year’s meeting, which will be held at the Washington, D.C. Hilton from December 7-9, 2015.

Click here to start the slideshow

Check back here for more articles and information about IEDM 2015:

Helpful conference links:

We are in a historic era for consolidation among semiconductor manufacturers. Included in the announced mergers and acquisitions this year alone are:

Semiconductor Market Consolidation. (Slide from: Dr. Rutger Wijburg, Sr. Vice President and General Manager, GLOBALFOUNDRIES; keynote at Semicon Europa

Semiconductor Market Consolidation. (Slide from: Dr. Rutger Wijburg, Sr. Vice President and General Manager, GLOBALFOUNDRIES; keynote at Semicon Europa)

According to a recent article in the Wall Street Journal by Don Clark, the reasons for this market consolidation are relatively new to the industry: slowing growth and rising costs.

In the past, chip makers used acquisitions to obtain new technology. But, Clark writes that a different reason is becoming more prominent: “Many recent deals resemble consolidation waves in older industries, motivated mainly by trimming costs in areas like manufacturing, sales and engineering.”

For example, Avago projects that it can gain $750 million in annual savings starting in 2017 after it integrates Broadcom, according to Clark.

The article cites figures from Dealogic stating that the industry has seen $100.6 Billion in mergers and acquisitions in 2015 so far, compared to $37.7 Billion for all of 2014.

And that total is poised to go higher.

“Bloomberg reported last week that four chip companies — Analog Devices Inc., Maxim Integrated Products Inc., SanDisk Corp. and Fairchild Semiconductor International Inc. — were in talks concerning different deal options… ‘It’s buy or be sold,’ summed up Alex Lidow, chief executive of Efficient Power Conversion Corp., a startup he co-founded in 2007 after 30 years leading chip maker International Rectifier Corp,” Clark writes.

New S$150 million joint investment is expected to create 60 jobs for highly skilled scientists, engineers and researchers.

SINGAPORE, October 19, 2015 – Applied Materials, Inc. today announced it plans to establish a new R&D laboratory in Singapore in collaboration with the Agency for Science, Technology and Research (A*STAR). The S$150 million joint investment will focus on developing advanced semiconductor technology to fabricate future generations of logic and memory chips.

The S$150 million joint lab will be housed within A*STAR’s new R&D cluster at Fusionopolis Two and will feature a 400 square meter Class 1 cleanroom with state-of-the-art semiconductor process equipment that has been custom designed and built by Applied Materials. The facility will be staffed by 60 highly skilled researchers and scientists, working together with extended research teams at A*STAR’s other research institutes.

The joint lab combines Applied Materials’ leading expertise in materials engineering with A*STAR’s multi-disciplinary R&D capabilities. A*STAR’s Institute of Microelectronics (IME), Institute of Materials Research and Engineering (IMRE), and Institute of High Performance Computing (IHPC) will contribute to research in low-defect processing, ultra-thin film materials, materials analysis and characterization, and modelling and simulation in many areas. The joint lab is also supported by The Singapore Economic Development Board, and is in line with its efforts to promote leading-edge R&D and advanced manufacturing activities. The intention is for products developed by the joint lab to be manufactured by Applied Materials in Singapore. In addition, Applied Materials plans to conduct experiments on the synchrotron at the Singapore Synchrotron Light Source (SSLS) and work with the National University of Singapore where a new beamline for semiconductor applications is to be developed. Funding for the construction of the new beamline is supported by the National Research Foundation.

Mr. Gary Dickerson, President and Chief Executive Officer of Applied Materials, Inc., said, “A*STAR and the government of Singapore have been great R&D partners for Applied Materials. We are excited to expand our collaboration to develop advanced semiconductor technology for extending Moore’s Law. Applied Materials’ leading expertise in materials engineering can help solve the challenges of producing future generations of logic and memory chips.”    

Mr. Lim Chuan Poh, Chairman, A*STAR, said, “This collaboration will catalyse the development of emerging technologies for the global electronics market and advance Singapore’s position as a key R&D hub for the industry. The joint lab reaffirms A*STAR’s multi-disciplinary R&D capabilities to drive innovation in the electronics sector, a key growth area for Singapore’s economy, and will generate further economic value through the creation of good jobs.”

“The joint lab will strengthen capabilities for Applied Materials in Singapore, as we expand from advanced manufacturing to early stage R&D and designing global products,” said Mr. Russell Tham, Corporate Vice President & Regional President South East Asia, Applied Materials, Inc. “Successful public-private partnerships, leveraging complementary strengths, help create new forms of value from Singapore and keep the local industry competitive.”

Prof. Raj Thampuran, Managing Director, A*STAR, said, “The new joint lab takes the longstanding collaboration between Applied Materials and A*STAR to the next level, and will marshal our combined strengths in research, development, innovation and industrial applications. This technology will pioneer new processes and techniques to advance the fabrication of semiconductor devices.”

The new joint lab marks Applied Materials’ second collaboration with A*STAR. In 2012, Applied and A*STAR’s IME formed a Center of Excellence in Advanced Packaging in Singapore to develop advanced 3D chip packaging technology.

According to a new market research report on the “Chemical Mechanical Planarization Marketby type (Equipment & consumables), Application(IC manufacturing, MEMS & NEM, Optics and Others), Technology (Leading edge, More Than Moore’s, and Emerging), and Geography (North America, Europe, APAC and RoW) – Global Forecast to 2020”, published by MarketsandMarkets, the market is expected to grow at a CAGR of 6.83% between 2015 and 2020, and reach $4.94 Billion by 2020.

Chemical mechanical planarization is a critical process technology step in the semiconductor wafer fabrication process. In this process step, the top surface of the wafer is polished or planarized to create a flawless flat surface that is essential to make faster and more powerful semiconductor devices with the aid of chemical slurry & mechanical movements. The CMP tool is comprised a rotating platen, slurry, pad, holding ring, brush, and pad conditioner. The mechanical element of this system applies downward pressure to a wafer surface, while the chemical reaction increases the material removal rate. The value chain of the CMP market consists of different players, including semiconductor material suppliers, CMP integrated solution providers, semiconductor wafer suppliers, semiconductor device manufacturers, slurry & pad manufacturers, technology solution providers, and CMP equipment manufacturers.

The global Chemical Mechanical Planarization Market was worth USD 3.32 Billion in 2014, and it is expected to reach USD 4.94 Billion by 2020, at an estimated CAGR of 6.83% from 2015 to 2020. Though the CMP market is at the mature stage, it still continues to evolve depending on the end users. The industry is being forced to adopt much innovation in process technologies and applications; as a result, different CMP processes have been evolved with technology nodes and newer applications such as MEMS, advanced packaging, and advanced substrates. The growing demand for consumer electronic products, increasing need of wafer planarization, and increasing use of micro-electro-mechanical systems (MEMS) is driving the global CMP market.

The CMP equipment market is expected to grow at the highest CAGR of 8.32% from 2015 to 2020. The key factors behind the high growth of the CMP equipment market is the strong growth in semiconductor equipment and capital spending. The CMP consumables market was valued at USD 2.25 Billion in 2014 and is expected to reach to USD 3.21 billion by 2020. The Applied Materials, Inc. (U.S.) and Ebara Corporation (Japan) are the major CMP equipment suppliers for different integrated device manufacturers.

This CMP consumables market is dominated by major market players such as Cabot Microelectronics Corporation (U.S.), Fujimi Incorporated (Japan), and Dow Electronic Materials (U.S.).The CMP regional market is mainly dominated by Asia-Pacific, followed by North America and Europe. The Asia-Pacific region accounted for the largest market share of ~67% and is expected to grow at the highest CAGR of 7.40% during the forecast period, followed by North America. The countries in Asia-Pacific region such as Taiwan, South Korea, Japan, and China are investing more in semiconductor manufacturing to meet the increasing demand for consumer electronic products. This detailed market research study provides detailed qualitative and quantitative analysis of the global chemical mechanical planarization market. It provides a comprehensive review of major market drivers, restraints, opportunities, challenges, and key issues in the market.

The tiny transistor is the heart of the electronics revolution, and Penn State materials scientists have just discovered a way to give the workhorse transistor a big boost, using a new technique to incorporate vanadium oxide, one of a family of materials called functional oxides, into the device.

The researchers knew that vanadium dioxide, which is just a specific combination of the elements vanadium and oxygen, had an unusual property called the metal-to-insulator transition. In the metal state, electrons move freely, while in the insulator state, electrons cannot flow. This on/off transition, inherent to vanadium dioxide, is also the basis of computer logic and memory.

The researchers had the idea that if they could add vanadium oxide close to the transistor it could boost the transistor’s performance. Likewise, by adding it to the memory cell, it could improve the stability and energy efficiency to read, write and maintain the information state. The major challenge they faced was that vanadium dioxide of sufficiently high quality had never been grown in a thin film form on the scale required to be of use to industry, the so-called wafer scale. Although vanadium dioxide, the targeted compound, looks simple, it is very difficult to synthesize. In order to create a sharp metal-to-insulator transition, the ratio of vanadium to oxygen needs to be precisely controlled. When the ratio is exactly right, the material will show a more than four-order-of-magnitude change in resistance, enough for a sufficiently strong on/off response.

In a paper in the online journal Nature Communications, the Penn State team reports for the first time the growth of thin films of vanadium dioxide on 3-inch sapphire wafers with a perfect 1:2 ratio of vanadium to oxygen across the entire wafer. The material can be used to make hybrid field effect transistors, called hyper-FETs, which could lead to more energy efficient transistors. In a paper published earlier this year, also in Nature Communications, the research group led by Prof. Suman Datta at Penn State showed that the addition of vanadium dioxide provided steep and reversible switching at room temperature, reducing the effects of self-heating and lowering the energy requirements of the transistor.

The implementation of vanadium dioxide can also benefit existing memory technologies, a quest that Penn State researchers are actively pursuing.

CEA-Leti today announced that it has joined the GLOBALSOLUTIONS ecosystem as an ASIC provider, specifically to support GLOBALFOUNDRIES’ 22FDX (TM) technology platform.

Launched this summer, GLOBALFOUNDRIES’ 22FDX technology platform is the industry’s first 22nm FD-SOI semiconductor technology developed specifically to meet the ultra-low-power requirements of the next generation of connected devices. The versatility of the 22FDX platform is a result of unmatched design flexibility and intelligence, including software-controlled transistor body-biasing that provides real-time trade-offs between power and performance. Delivering FinFET-like performance and energy-efficiency at a cost comparable to 28nm planar technologies, the platform enables a new level of innovations on next-generation chips and sets new standards in-terms of user experience for Internet of Things (IoT), mainstream mobile, RF, and networking applications.

GLOBALSOLUTIONS was created more than five years ago to spur innovation in the semiconductor industry and assure chip designers receive world-class service from design conception to production. The ecosystem combines GLOBALSOLUTIONS’ internal resources with a broad spectrum of partners to efficiently enable the fastest time-to-volume for foundry customers.

“Together with our design services partners, we are able to offer a full suite of services and comprehensive turnkey solutions that confirms GLOBALFOUNDRIES’ leadership in providing high-performance customized products in the FD-SOI and ASIC markets,” said Gary Patton, chief technology officer and head of worldwide R&D at GLOBALFOUNDRIES. “Our expanded partnership with Leti further reflects our commitment to find design implementations that will accelerate time-to-volume and deliver ultra-low-power solutions to our customers.”

Earlier this year, Leti assigned a team of experts to GLOBALFOUNDRIES’ Dresden, Germany, Fab 1 to support ramp up of the platform. As an ecosystem partner, Leti will provide GLOBALFOUNDRIES’ customers circuit-design IP, including for its back-bias feature for FD-SOI, which enables exceptional performance at very low voltages with low leakage.

“This strategic partnership with GLOBALFOUNDRIES positions Leti to help a broad range of designers utilize FD-SOI technology’s significant strengths in ultra-low-power and high performance in their IoT and mobile devices with 22nm technology,” said Marie Semeria, Leti CEO. “In addition, it gives both sides’ customers increased access to our respective technologies. This kind of partnership is a key part of Leti’s global strategy.”

DCG Systems (R) today announced the release of the Meridian M (TM) system for isolation of routine and challenging electrical faults at the wafer level. Offering photon emission for transistor-level defects and leakage, and a complete portfolio of static laser stimulation techniques for metallization defects, the Meridian M system is a critical tool to support production use cases in memory and foundry failure analysis (FA) labs. Its high sensitivity, extended-wavelength DBX (TM) optics capture even the most challenging faults, including:

  • Large-area process variation in advanced memory devices that can lead to anomalous leakage;
  • High resistivity wordline to wordline or bitline to bitline shorts within memory cells;
  • Resistive faults in low voltage GPUs and other low-voltage logic circuits;
  • Any weakly emitting faults requiring long integration time.

The Meridian M system also captures electrical faults that emit photons primarily in the thermal range (>1850nm), such as partial opens, high-ohmic shorts and electromigration.

“Static optical fault isolation (OFI) is in a renaissance,” said Praveen Vedagarbha, Ph.D., business unit manager of the Meridian product group at DCG Systems. “While dynamic OFI is important for localizing parametric faults, static OFI is faster and easier to use than its dynamic counterpart because it does not require docking to a tester or having the device and tester knowledge necessary to edit the test program. The speed and ease of use of the Meridian M system are particularly valuable in early yield ramp, when rapid feedback to the process engineering team is critical. ”

Among static-only optical fault isolation systems, Meridian M has demonstrated superior performance in localizing faults with the weakest photon emission. Custom-designed optics, a set of user-selectable wavelength ranges, and the lowest background noise in the industry allow Meridian M to be optimized for a variety of fault types, from conventional “optical” emitters such as excessive leakage, saturation and latch-up faults to longer-wavelength “thermal” emitters, such as high-resistance shorts and dopant displacement errors. Because it accommodates full wafers in addition to packaged die, the Meridian M system allows comparison of good die to bad die, aiding interpretation of complex thermal and photon emission images.