Category Archives: Top Story Right

In its Research Bulletin dated August 2, 2013, IC Insights published its list of the top semiconductor sales leaders for the first half of 2013. The list showed the usual big-time players that we’ve come to expect like Intel, Samsung, and TSMC, leading the way in semiconductor sales through the first six months of the year. What stood out nearly as much, however, was that only one Japanese company—Toshiba—was present among the top 10 suppliers through the first half of 2013.  Anyone who has been involved in the semiconductor industry for a reasonable amount of time realizes this is a major shift and a big departure for a country that once was feared and revered when it came to its semiconductor manufacturing presence on the global market.

Figure 1 traces the top 10 semiconductor companies dating back to 1985, when Japanese semiconductor manufacturers wielded their influence on the global stage.  That year, there were five Japanese companies ranked among the top 10 semiconductor suppliers.  Then, in 1990, six Japanese companies were counted among the top 10 semiconductor suppliers—a figure that has not been matched by any country or region since.  The number of Japanese companies ranked in the top 10 in semiconductor sales slipped to four in 1995, then fell to three companies in 2000 and 2006, two companies in 2012, and then to only one company in the first half of 2013.

Read more: First half of 2013 shows big changes to the top 20 semiconductor supplier ranking

It is worth noting that Renesas (#11), Sony (#16), and Fujitsu (#22) were ranked among the top 25 semiconductor suppliers in 1H13, but Sony has been struggling to re-invent itself and Fujitsu has spent the first half of 2013 divesting most of its semiconductor operations.

Japan’s total presence and influence in the semiconductor marketplace has waned.  Once-prominent Japanese names now gone from the top suppliers list include NEC, Hitachi, Mitsubishi, and Matsushita. Competitive pressures from South Korean IC suppliers—especially in the DRAM market—have certainly played a significant role in changing the look of the top 10.  Samsung and SK Hynix emulated and perfected the Japanese manufacturing model over the years and cut deeply into sales and profits of Japanese semiconductor manufacturers, resulting in spin-offs, mergers, and acquisitions becoming more prevalent among Japanese suppliers.

  • 1999 — Hitachi and NEC merged their DRAM businesses to create Elpida Memory.
  • 2000 — Mitsubishi divested its DRAM business into Elpida Memory.
  • 2003 — Hitachi merged its remaining Semiconductor & IC Division with Mitsubishi’s System LSI Division to create Renesas Technology.
  • 2003 — Matsushita began emphasizing Panasonic as its main global brand name in 2003.  Previously, hundreds of consolidated companies sold Matsushita products under the Panasonic, National, Quasar, Technics, and JVC brand names.
  • 2007 — To reduce losses, Sony cut semiconductor capital spending and announced its move to an asset-lite strategy—a major change in direction for its semiconductor business.
  • 2010 — NEC merged its remaining semiconductor operations with Renesas Technology to form Renesas Electronics.
  • 2011 — Sanyo Semiconductor was acquired by ON Semiconductor.
  • 2013 — Fujitsu and Panasonic agreed to consolidate the design and development functions of their system LSI businesses.
  • 2013 — Fujitsu sold its MCU and analog IC business to Spansion.
  • 2013 — Fujitsu sold its wireless semiconductor business to Intel.
  • 2013 — Elpida Memory was formally acquired by Micron.
  • 2013 — After failing to find a buyer, Renesas announced plans to close its 300mm and 125mm wafer-processing site in Tsuruoka, Japan, by the end of 2013.  The facility makes system-LSI chips for Nintendo video game consoles and other consumer electronics.
  • 2013 — Unless it finds a buyer, Fujitsu plans to close its 300mm wafer fab in Mie.

Besides consolidation, another reason for Japan’s reduced presence among leading global semiconductor suppliers is that the vertically integrated business model that served Japanese companies so well for so many years is not nearly as effective in Japan today.  Due to the closed nature of the vertically integrated business model, when Japanese electronic systems manufacturers lost marketshare to global competitors, they took Japanese semiconductor divisions down with them.  As a result, Japanese semiconductor suppliers missed out on some major design win opportunities for their chips in many of the best-selling consumer, computer, and communications systems that are now driving semiconductor sales.

It is probably too strong to suggest that in the land of the rising sun, the sun has set on semiconductor manufacturing.  However, the global semiconductor landscape has changed dramatically from 25 years ago. For Japanese semiconductor companies that once prided themselves on their manufacturing might and discipline to practically disappear from the list of top semiconductor suppliers is evidence that competitive pressures are fierce and that as a country, perhaps Japan has not been as quick to adopt new methods to carry on and meet changing market needs.

Whereas the current display industry has developed its technology and products centered on scaling-up to large sizes and realizing high-resolution images, the future industry development direction is expected to focus on flexible displays. Compared to the conventional glass substrate, flexible displays are thinner, lighter, and less prone to break. With such properties, it is expected that flexible electronic devices will be able to replace the existing market as well as create new ones.

The flexible (thin glass, metal thin film, plastic) substrate is gaining importance as a key component that determines the processability, performance, reliability, and price of flexible displays. To this end, IHS Electronics & Media publishes a Flexible Display Substrate Technology report to analyze the technology development, industrial conditions, and R&D trends of flexible substrates.

According to the report, the flexible substrate market is forecast to grow to $506.7 million by 2020 from a $2.5 million in 2013. The OLED display, another market that can be created by applying the flexible substrate technology, is expected to make up 91 percent of the overall market.

Samsung today introduced the first solid state drive (SSD) based on its recently released 3D V-NAND technology. Samsung announced its new SSD, designed for use in enterprise servers and data centers, during a keynote at the Flash Memory Summit 2013.

 Samsung V-NAND SSD

Read more: Samsung starts mass producing industry’s first 3D vertical NAND flash

“By applying our 3D V-NAND – which has overcome the formidable hurdle of scaling beyond the 10-nanometer (nm) class, Samsung is providing its global customers with high density and exceptional reliability, as well as an over 20 percent performance increase and an over 40 percent improvement in power consumption,” said E.S. Jung, executive vice president, semiconductor R&D center at Samsung Electronics and a keynote speaker at the Flash Memory Summit. “As we pioneer a new era of memory technology, we will continue to introduce differentiated green memory products and solutions for the server, mobile and PC markets to help reduce energy waste and to create greater shared value in the enterprise and for consumers.”

Read more: SSD market scores big in Q1

Samsung’s V-NAND SSD comes in 960 gigabyte (GB) and 480GB versions. The 960GB version boasts the highest level of performance, offering more than 20 percent increase in sequential and random write speeds by utilizing 64 dies of MLC 3D V-NAND flash, each offering 128 gigabits (Gb) of storage, with a six-gigabit-per-second SATA interface controller. The new V-NAND SSD also offers 35K program erase cycles and is available in a 2.5 inch form factor with x, y and z-heights of 10cm, 7cm and 7mm, which provides server manufacturers with more design flexibility and scalability.

Samsung’s proprietary 3D V-NAND technology achieves manufacturing productivity improvements over twice that of 20nm-class planar NAND flash, by using cylinder-shaped 3D Charge Trap Flash cell structures and vertical interconnect process technology to link the 24 layers comprising the 3D cell array. During his keynote remarks, EVP E.S. Jung emphasized that “The 3D V-NAND will drive disruptive innovation that can be compared to a Digital Big Bang in the global IT industry, and contribute to much more significant growth in the memory market.”

Samsung will continue to introduce next-generation V-NAND products with enhanced performance to meet diverse customer needs for NAND flash-based storage. These customer focuses will range from large data centers that can realize higher investment potential based on greater performance and energy efficiency to PC applications that place a high priority on cost-effectiveness and high density, further strengthening Samsung’s business competitiveness.

Samsung said it began producing its new V-NAND SSDs earlier this month.

Read more: How Samsung is climbing the charts

apple logoIn an illustration of the massive power it wields in the electronics supply chain, Apple Inc.’s migration of the production of key semiconductors from Samsung to pure-play foundries will single-handedly boost the growth of the chip contract manufacturing market this year.

Read more: Apple confirms acquisition of Passif Semiconductor

By the end of the year, pure-play semiconductor foundry market revenue is forecast to rise 21 percent compared to 2012, according to the new IHS report entitled: “Low-Cost Tablet Processor Market Computes New Growth” from information and analytics provider IHS.

In contrast, takings for the overall semiconductor industry will expand by a more staid 5 percent.

The pure-play foundry industry is already on track to achieve such growth this year, with revenue amounting to $8.2 billion in the first quarter, up 4 percent from $7.9 billion in the fourth quarter last year, as shown in the attached figure. In comparison, the overall semiconductor market was down by 5 percent during the same period.

The foundry segment is also believed to have outperformed the rest of the industry in the second quarter when final figures are released, and then go on to perform strongly for the second half.

Pure-play foundries are companies that exclusively perform contract manufacturing of chips for other semiconductor suppliers. Major companies in the pure-play foundry business include Taiwan Semiconductor Manufacturing Co. Ltd. and United Microelectronics Corp.

Apple takes apps processor business elsewhere

“The growth outlook for the pure-play foundry business has risen considerably in anticipation of Apple’s transition of its applications processor chip manufacturing to third-party manufacturers,” said Len Jelinek, director and chief analyst of semiconductor manufacturing at IHS. “Previously, Apple had relied on Samsung as the primary supplier of applications processor chips for the iPhone and iPad. However, Samsung is not considered a pure-play foundry. Instead, it is designated as an integrated device manufacturer (IDM)—a chip supplier that not only builds products but also possesses design capabilities and sells devices under its own brand name, functions not performed by foundries.”

Read more: How Samsung is climbing the charts

Apple already has its own designs and does not need an IDM for its chips to be made, so it can just as easily move its semiconductors to a foundry.

“However, Apple’s anticipated shift is also the result of its well-publicized tiffs with Samsung over patent infringements on both makers’ smartphones that have strained relationships between the two,” Jelinek added.

Moving forward, Apple is likely to use a producer like TSMC, the largest foundry in the business, with $16.9 billion in revenue for 2012.

Wireless on the rise

While the overall semiconductor industry continues to be heavily dependent on components sold to the PC market, foundry players have hitched their revenue prospects to the rising fortunes of the wireless segment. As a result, revenue for foundries has been expanding steadily, while that for the overall chip industry has been less assured.

Read more: Personal computer shipments post worst quarter on record

Threats and risks ahead

Although strong growth is projected in 2013 for foundry suppliers, several concerns abound that foundry players must monitor throughout the year.

Foundry suppliers must be aware of the global economy, as well as the inventory that their clients maintain. Should the world market sputter, consumer demand for electronic products will weaken, thereby impacting chip makers and foundries alike. If inventory grows out of control for foundry clients as it did in the second half of 2012, manufacturing run rates for foundries could decline significantly for the remaining six months of 2013 as their customers hold back on chip orders.

A rising threat to foundries is also coming from IDMs like Samsung and chipmaker Intel. For the first time, the top foundry suppliers are facing technological competition from IDMs—which means that the leading foundries are no longer in competition with just one another.

As several IDMs attempt to revamp their manufacturing models and move to new and more efficient lithographies, incumbent foundries will be forced to accelerate internal technology development. The race between the two rival groups will result in a shortening of technology cycles and fierce competition among participants. A company unsuccessful in execution will inevitably lose important market share and be weakened, or worse, forced out, IHS believes.

Ultimately the consumer will be the winner. Technological developments will provide designers the ability to integrate multiple functions onto a chip, offered at a unit cost that results in cheaper, yet more powerful consumer products.

Samsung announced today that it has begun mass producing the industry’s first three-dimensional (3D) Vertical NAND (V-NAND) flash memory, which breaks through the current scaling limit for existing NAND flash technology. Achieving gains in performance and area ratio, the new 3D V-NAND will be used for a wide range of consumer electronics and enterprise applications, including embedded NAND storage and solid state drives (SSDs).

Samsung 3D vertical NAND flash memory

Samsung’s new V-NAND offers a 128 gigabit (Gb) density in a single chip, utilizing the company’s proprietary vertical cell structure based on 3D Charge Trap Flash (CTF) technology and vertical interconnect process technology to link the 3D cell array. By applying both of these technologies, Samsung’s 3D V-NAND is able to provide over twice the scaling of 20nm-class planar NAND flash.

“The new 3D V-NAND flash technology is the result of our employees’ years of efforts to push beyond conventional ways of thinking and pursue much more innovative approaches in overcoming limitations in the design of memory semiconductor technology,” said Jeong-Hyuk Choi, senior vice president, flash product & technology, Samsung Electronics. “Following the world’s first mass production of 3D Vertical NAND, we will continue to introduce 3D V-NAND products with improved performance and higher density, which will contribute to further growth of the global memory industry.”

For the past 40 years, conventional flash memory has been based on planar structures that make use of floating gates. As manufacturing process technology has proceeded to the 10nm-class and beyond, concern for a scaling limit arose, due to the cell-to-cell interference that causes a trade-off in the reliability of NAND flash products. This also led to added development time and costs.

Samsung’s new V-NAND solves such technical challenges by achieving new levels of innovation in circuits, structure and the manufacturing process through which a vertical stacking of planar cell layers for a new 3D structure has been successfully developed. To do this, Samsung revamped its CTF architecture, which was first developed in 2006. In Samsung’s CTF-based NAND flash architecture, an electric charge is temporarily placed in a holding chamber of the non-conductive layer of flash that is composed of silicon nitride (SiN), instead of using a floating gate to prevent interference between neighboring cells.

By making this CTF layer three-dimensional, the reliability and speed of the NAND memory have improved sharply. The new 3D V-NAND shows not only an increase of a minimum of 2X to a maximum 10X higher reliability, but also twice the write performance over conventional 10nm-class floating gate NAND flash memory.

Also, one of the most important technological achievements of the new Samsung V-NAND is that the company’s proprietary vertical interconnect process technology can stack as many as 24 cell layers vertically, using special etching technology that connects the layers electronically by punching holes from the highest layer to the bottom. With the new vertical structure, Samsung can enable higher density NAND flash memory products by increasing the 3D cell layers without having to continue planar scaling, which has become incredibly difficult to achieve.

After nearly 10 years of research on 3D Vertical NAND, Samsung now has more than 300 patent-pending 3D memory technologies worldwide.

According to IHS iSuppli, the global NAND flash memory market is expected to reach approximately US $30.8 billion in revenues by the end of 2016, from approximately US $23.6 billion in 2013 with a CAGR of 11 percent, in leading growth of the entire memory industr

The Semiconductor Industry Association (SIA) today announced that worldwide sales of semiconductors reached $74.65 billion during the second quarter of 2013, an increase of 6 percent from the first quarter when sales were $70.45 billion. This marks the largest quarterly increase in three years. Global sales for June 2013 hit $24.88 billion, an increase of 2.1 percent compared to June 2012 and 0.8 percent higher than the May 2013 total. Regionally, sales in the Americas jumped 8.6 percent in Q2 compared to Q1 and 10.6 percent in June 2013 compared to June 2012, marking the region’s largest year-over-year increase of 2013. All monthly sales numbers are compiled by the World Semiconductor Trade Statistics (WSTS) organization and represent a three-month moving average.

"There’s no question the global semiconductor industry has picked up steam through the first half of 2013, led largely by the Americas," said Brian Toohey, president and CEO, Semiconductor Industry Association. "We have now seen consistent growth on a monthly, quarterly, and year-to-year basis, and sales totals have exceeded the latest industry projection, with sales of memory products showing particular strength."

Quarterly sales outperformed the World Semiconductor Trade Statistics (WSTS) organization’s latest industry forecast, which projected quarter-over-quarter growth of 4.6 percent globally and 3.4 percent for the Americas (compared to the actual increases of 6 percent and 8.6 percent, respectively). Total year-to-dates sales of $145.1 billion also exceeded the WSTS projection of $144.1 billion. Actual year-to-date sales through June are 1.5 percent higher than they were at the same point in 2012.

Regionally, sales in June increased compared to May in the Americas (3.5 percent), Asia Pacific (0.4 percent), and Europe (0.1 percent), but declined slightly in Japan (-0.9 percent). Compared to the same month in 2012, sales in June increased substantially in the Americas (10.6 percent), moderately in Asia Pacific (5.4 percent), and slightly in Europe (0.8 percent), but dropped steeply in Japan (-20.8 percent), largely due to the devaluation of the Japanese yen.

"While we welcome this encouraging data, it is important to recognize the semiconductor workforce that drives innovation and growth in our industry," continued Toohey. "A key roadblock inhibiting our innovation potential is America’s outdated high-skilled immigration system, which limits semiconductor companies’ access to the world’s top talent. The House of Representatives should use the August recess to work out their political differences on this issue and return to Washington next month ready to approve meaningful immigration reform legislation."

Cascade Microtech, Inc. and imec today announced breakthroughs in probing stacked integrated circuits (3D-SICs), fueling an important growth engine for the semiconductor market. Through a Joint Development Agreement, Cascade Microtech partnered with imec to successfully probe 25µm-diameter micro-bumps on a wide I/O test wafer with its fully-automated CM300 probe solution utilizing an advanced version of Pyramid Probe technology. This achievement comes as part of imec’s 3D integration research program which includes other industry partners from the entire semiconductor value chain.

The 3D semiconductor market (including 3D-SIC, 2.5D interposer, and 3D WLCSP) is expected to represent nine percent of the total semiconductor value by 2017, according to Yole Développement. Logic 3D SoC/SiP (including interposer chips, APE, CPU, FPGA, wide I/O memory, etc.) will be the biggest industry using 3D platforms in the next few years. 3D applications will emerge in high-performance computing, and electronic markets such as nanotechnology and medical applications, which will benefit from the high-density integration that 3D technology offers.

The semiconductor industry is exploring new methods to increase the functionality of ICs at a smaller footprint, extending Moore’s Law. 3D-SICs offer a solution to the speed, power and density requirements demanded by future mobile electronics platforms. Through-silicon vias (TSV) used in 3D-SICs shorten interconnects between logic elements, thus reducing power while increasing performance. Within imec’s 3D integration research program, industry leaders are jointly developing design, manufacturing, and test solutions to bring this new technology to high-volume manufacturing.

Cascade Microtech’s CM300 flexible on-wafer measurement system was designed to deliver superior positioning accuracy and repeatable contact, offering a level of precision that supports both shrinking pad sizes and pitch roadmaps. The CM300 captures the true electrical performance of devices with high-performance capabilities that include low leakage and low noise. As a comprehensive probing solution employing the latest advances in Pyramid Probe technology, the CM300 has proven to meet the fine-pitch (40 µm area array), low-force (< 1gf/tip) advanced probing requirements of 3D-SICs.

“We are excited that our work with Cascade Microtech has resulted in such a breakthrough. I believe together we’ve achieved a first in the industry,” said Erik Jan Marinissen, Principal Scientist at imec in Leuven, Belgium. “We are able to hit 25 µm-diameter micro-bumps with a high level of accuracy due to the probe-to-pad alignment features of Cascade Microtech’s CM300. And advances in their Pyramid Probe technology have enabled us to probe micro-bumped wafers with 40/50 µm pitch according to the JEDEC Wide-I/O Mobile DRAM standard.”

“Cascade Microtech’s CM300 probe solution is designed to provide greater alignment accuracy to probe directly on small, fragile micro-bumps. In conjunction with a fine-pitch, low-force Pyramid Probe card, we have achieved consistent, accurate measurements on a wide I/O test wafer using a single-channel, wide I/O probe core with an array of 6 x 50 tips at 40/50 µm pitch, with the ability to shrink down to 20 µm pitches in the future,” said Steve Harris, Executive Vice President, Engineering, Cascade Microtech. “Together, imec and Cascade Microtech are enabling the ongoing future of CMOS technologies through this ground-breaking work. 3D integration will undoubtedly result in increased performance and yield while reducing overall costs.”

 

In a season when their sales should be rising sharply, suppliers of large-sized liquid-crystal (LCD) panels instead are encountering weak demand growth in the third quarter, exacerbating the glut already plaguing the market.

Measured in terms of square meters, supply of large-sized LCDs is expected to exceed demand by 15.9 percent during the period from July through September, according to the latest report entitled “Oversupply to Continue Due to Weak Economy” from information and analytics provider IHS. This is up nearly 3 percentage points from the previous forecast of a 13.2 percent oversupply, as presented in the figure below.

While the glut will decline compared to the second quarter—as is normal during the pre-holiday season—the surplus remains at elevated levels.

“This is the time of the year when LCD panel makers usually are ramping up production to meet holiday demand for televisions, notebook PCs, tablets and other consumer-oriented electronics,” said Ricky Park, senior manager for large-area displays at IHS. “However, the display industry is confronting the prospect of weak sales growth and a lack of visibility into future demand trends. With a combination of flagging economic conditions and the end of a popular television incentive plan in China, large-sized LCD panel supply is expected to overshoot demand by a higher margin than previously predicted.”

IHS defines large-sized LCDs as panels that have a diagonal dimension of 7 inches or greater used in devices such as televisions, notebook PCs and monitors.

Demand dearth

Global large-sized LCD panel demand in terms of square meters is expected to rise by a tepid 6 percent in the third quarter compared to the second. In most years, growth is typically larger because of seasonal factors. Expansion in 2012, for instance, was in double-digit territory at more than 10 percent.

Meanwhile, production capacity utilization among large-sized LCD makers is on the rise, increasing to 84 percent in the third quarter, up from 79 percent in the second.

The combination of the weaker-than-normal increase in demand and the significant expansion in utilization will combine to inflate the excess supply to higher levels.

China’s challenge

For their part, Chinese television makers are experiencing swelling inventories because of weaker-than-expected sales. The companies are likely to reduce their sales targets for 2013 and are trimming panel orders for the second half of the year.

Although China continues to enjoy the strongest economic growth among the major world economies, signs of weakness abound as export growth has declined sharply, due to a stagnant global economic recovery, a stronger yuan, and the Chinese government’s efforts to stem currency speculation. Given the deterioration of its export industry and the sluggish global economy, China can no longer depend on exports to fuel its overall economic growth.

Furthermore, the Chinese government has terminated its subsidy program for energy-saving TVs that had been driving sales earlier this year. This will further reduce panel demand.

CEA-Leti today announced that a group of European and Japanese companies, research institutes, universities and cities will work together in the ClouT project to deliver ways for cities to leverage the Internet of Things (IoT) and cloud computing – to become smart cities.

ClouT, which stands for “cloud of things,” will develop infrastructure, services, tools and applications for municipalities and their various stakeholders – including citizens, service developers and application integrators – to create, deploy and manage user-centric applications that capitalize on the latest advances in IoT and cloud computing.

The IoT allows users to connect “everything” (sensors, objects, actuators, mobile phones, servers, etc.) and gather and share information in real-time from the physical environment. Cloud computing lets users process, store and access information with virtually unlimited processing and storage capacity. ClouT will integrate the latest advances in these domains and, with its user-centric approach, allow end users in cities to create their own cloud services and share them with other citizens.

Target applications include enhanced public transportation, increased citizen participation through the use of mobile devices to photograph and record situations of interest to city administrators, safety management, city-event monitoring and emergency management. The project, which is coordinated in Europe by Leti, includes nine industrial and research partners and four cities: Santander, Spain; Genoa, Italy; Fujisawa, Japan and Mitaka, Japan. The applications will be validated in those cities via field trials with citizens.

By combining EU and Japanese resources, the three-year, nearly 4 million-euro project is designed to create an on-going synergy for smart-city initiatives between Europe and Japan.

ClouT is jointly funded by the 7th Framework Programme of the European Commission and by the National Institute of Information and Communications Technology (NICT) of Japan.

 

Micron Technology, Inc., today announced that it is sampling next-generation, 16-nanometer (nm) process technology, enabling the industry’s smallest 128-gigabit (Gb) multi-level cell (MLC) NAND Flash memory devices. The 16nm node is not only the leading Flash process, but it is also the most advanced processing node for any sampling semiconductor device.

Micron’s 128Gb MLC NAND Flash memory devices are targeted at applications like consumer SSDs, removable storage (USB drives and Flash cards), tablets, ultrathin devices, mobile handsets and data center cloud storage. The new 128Gb NAND Flash memory provides the greatest number of bits per square millimeter and lowest cost of any MLC device in existence. In fact, the new technology could create nearly 6TB of storage on a single wafer.

“Micron’s dedicated team of engineers has worked tirelessly to introduce the world’s smallest and most advanced Flash manufacturing technology,” said Glen Hawk, vice president of Micron’s NAND Solutions Group." Our customers continually ask for higher capacities in smaller form factors, and this next-generation process node allows Micron to lead the market in meeting those demands.”

“Cost reductions will always be fundamental to the NAND industry and so companies who can continue to lead on the flash process technology will be poised for success, particularly in vertically integrated solutions,” according to Gartner.*

Micron is sampling the 16nm, 128Gb MLC NAND with select partners now and plans to be in full production in 4Q13. Micron is also developing a new line of solid-state drive (SSD) solutions based on these devices and expects to ship SSDs with 16nm Flash in 2014.

Micron NAND