Category Archives: Power Electronics

Technavio’s latest report on the global industrial embedded systems market provides an analysis on the most important trends expected to impact the market outlook from 2016-2020. Technavio defines an emerging trend as a factor that has the potential to significantly impact the market and contribute to its growth or decline.

Bharath Kanniappan, a lead analyst from Technavio, specializing in research on industrial automation sector, says, “Industrial embedded systems are widely used in both process and discrete industries. Industries such as oil and gas, power, cement, chemical, and automotive, and pulp and paper, among others, have harsh operating conditions and require robust automation systems.”

New trends such as vision systems, multi-core processors, and power efficiency capabilities have further augmented the utility and scope of the industrial embedded hardware market. The latest developments in embedded hardware are the incorporation of embedded sensors in the form of nano blobs in materials used to build industrial robots, thus enabling the machines to achieve increased conductivity and superior sensitivity. Such attributes let robots safely interact with objects and human beings in industrial environments. Such developments are an impetus to the growing embedded hardware market.

The top three emerging trends driving the global industrial embedded systems market according to Technavio automation research analysts are:

  • Increased adoption of multi-core processors
  • Rise of wireless connectivity
  • Advancement of materials used in embedded systems

Increased adoption of multi-core processors

Earlier, 8-bit microcontrollers were the most commonly used in industrial embedded systems such as motor control, industrial process control, actuators, sensors, and robotics. However, industrial technology has advanced to include complex capabilities such as wireless connectivity, imaging, and smart sensors, and this has propelled the demand for advanced and efficient algorithms. Hence, vendors are designing single chips with multiple cores to enhance applications, increase reliability, reduce power consumption, and lower overall operational costs.

“The Compact RIO industrial embedded controller from National Instruments has a dual core processor which has enabled the integration of latest technologies such as Xilinx Kintex 7 FPGAs and 64-bit Intel Atom E3800 SoC,” according to Bharath.

Rise of wireless connectivity

IoT enables prompt collection, storage, and transmission of data, which allows rapid analysis and decision making by experts across international borders. Recent developments in sensor technologies (such as wireless sensor nodes) can be integrated with wireless networking protocols like ZigBee and Wi-Fi. Previously industrial embedded systems were operating as stand-online systems. Currently, due to the high demand of IoT and wireless protocols including near field communications and long range protocols in various industries, industrial embedded systems are adopting wireless SoC architecture.

Wireless connectivity in industrial embedded systems has enabled Internet connectivity and subsequently increased the market prospects of industrial embedded systems during the forecast period.

Advancement of materials used in embedded systems

Previously sensors used in industries could collect and interpret information only at the point of contact between the sensor and the object. This is a major limiting factor in the use of industrial sensors. Hence newer materials are being developed which can incorporate multiple embedded technologies and augment the functioning of sensors. Using new composite materials such as ceramic hybrid polymers and polydimethylsiloxane, the lifespan of embedded systems remains unaffected as these materials redirect stress away from these electronic devices.

By successful incorporation of embedded systems in these materials and the use of finite-element-analysis (FEA) software, sensors can perform their function beyond the limits of the contact point by using analysis of predictive stress and strain patterns. These superior sensors can be utilized for effective and efficient predictive maintenance in various industries.

The key vendors are as follows:

  • Atmel
  • Intel
  • National Instruments
  • Infineon Technologies

About Technavio

Technavio is a leading global technology research and advisory company. The company develops over 2000 pieces of research every year, covering more than 500 technologies across 80 countries. Technavio has about 300 analysts globally who specialize in customized consulting and business research assignments across the latest leading edge technologies.

Technavio analysts employ primary as well as secondary research techniques to ascertain the size and vendor landscape in a range of markets. Analysts obtain information using a combination of bottom-up and top-down approaches, besides using in-house market modeling tools and proprietary databases. They corroborate this data with the data obtained from various market participants and stakeholders across the value chain, including vendors, service providers, distributors, re-sellers, and end-users.


Cambridge, UK — November 9, 2015 — Xaar plc, a world leader in industrial inkjet technology, and Lawter, along with its parent company Harima Chemicals Group (HCG), announced a collaboration to optimize the performance of a line of nanosilver conductive inks in the Xaar 1002 industrial inkjet printhead. The combined solution will be of particular interest to manufacturers of consumer electronics goods looking for a robust and reliable method for printing antennas and sensors with silver nanoparticle ink as part of their manufacturing processes.

Industrial inkjet offers significant advantages over traditional print technologies to manufacturers of consumer electronics products. Inkjet is a cleaner process than other methods of printing silver inks; this is especially relevant when printing onto a substrate, such as a display, in which any yield loss is very expensive. With inkjet, manufacturers can very precisely control the amount of ink dispensed in certain areas of a pattern so that the ink or fluid deposited can be thicker in some areas and thinner in others. Similarly, inkjet enables the deposition of a much thinner layer of fluids than traditional methods, which is significant for the manufacturers looking to produce thinner devices. In addition, inkjet is one of the few technologies able to print a circuit over a substrate that has a structured surface.

“This is an excellent opportunity to showcase our latest technological breakthroughs and demonstrate the unique value that our revolutionary nanoparticle inkjet solutions can play as part of an integrated system solutions in the PE world,” says Dr. Arturo Horta Ph.D., Business Development Manager for Lawter Innovation Group.

HCG pioneered the development and manufacture of silver nanoparticle conductive inks for the printed electronics industry over 20 years ago and has over 100 patents related to its nanoparticle dispersion technology. This line of nanosilver conductive inks for inkjet printing offers a unique combination of low temperature sintering and high circuit conductivity. In addition, Lawter’s novel inks are compatible with a range of photonic curing tools as well as a variety of substrates.  These value-added features, together for the first time in a single product, provide increased project efficiency, decreased raw material costs and finer line printing.  All of this adds up to significant, quantifiable benefits for the end-user.

Xaar, also a major player in industrial manufacturing applications, has been delivering inkjet technology for 25 years. Its leading printhead, the Xaar 1002 is particularly suitable for Lawter’s nanosilver conductive inks due to the printhead’s unique TF Technology™ (fluid recirculation) which ensures a continuous flow of the heavy particulate in the ink to deliver uninterrupted high volume production printing.

“The applications that will benefit from the combination of Lawter’s nanosilver conductive inks and Xaar’s 1002 printhead are exciting,” says Keith Smith, Director of Advanced Manufacturing at Xaar. “We are seeing more and more that the consumer electronics market is looking for a printing solution that provides the quality of the Lawter ink and production reliability of the Xaar GS6 1002 to allow designers to make thinner devices.  The printhead and ink combination, along with photonic sintering, is unlocking mechanical and electrical designs never thought possible before.”


11/3/2015 Update: The deadline for papers has been extended to November 11, 2015

SEMI announced today that the deadline for presenters to submit an abstract for the 27th annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) is November 2. ASMC, which takes place May 16-19, 2016 in Saratoga Springs, New York, will feature technical presentations of more than 90+ peer-reviewed manuscripts covering critical process technologies and fab productivity. This year’s event features keynotes, a panel discussion, networking events, technical sessions on advanced semiconductor manufacturing, as well as educational tutorials.

ASMC continues to fill a critical need in our industry and provides a venue for industry professionals to network, learn and share knowledge on new and best-method semiconductor manufacturing practices and concepts. Selected speakers have the opportunity to present in front of IC manufacturers, equipment manufacturers, materials suppliers, chief technology officers, operations managers, process engineers, product managers and academia. Technical abstracts are due November 2, 2015. 

This year SEMI is including two new technology areas: 3D/TSV/Interposer and Fabless Experience. SEMI is soliciting technical abstracts in these key technology areas:

  • 3D/TSV/Interposer
  • Advanced Metrology
  • Advanced Equipment Processes and Materials
  • Advanced Patterning / Design for Manufacturability
  • Advanced Process Control (APC)
  • Contamination Free Manufacturing (CFM)
  • Data Management and Data Mining Tools
  • Defect Inspection and Reduction
  • Discrete Power Devices
  • Enabling Technologies and Innovative Devices
  • Equipment Reliability and Productivity Enhancements
  • Fabless Experience
  • Factory Automation
  • Green Factory
  • Industrial Engineering
  • Lean Manufacturing
  • Yield Methodologies

Complete descriptions of each topic and author kit can be accessed at If you would like to learn more about the conference and the selection process, please contact Margaret Kindling at [email protected] or call 1.202.393.5552.   

Papers co-authored between device manufacturers, equipment or materials suppliers, and/or academic institutions that demonstrate innovative, practical solutions for advancing semiconductor manufacturing are highly encouraged. To submit an abstract, visit

Technical abstracts are due November 2, 2015. To learn more about the SEMI Advanced Semiconductor Manufacturing Conference, visit

SAN JOSE, Calif. — Integrated Device Technology, Inc. (IDT) today announced an agreement to acquire privately held ZMDI (Zentrum Mikroelektronik Dresden AG) for total consideration of $310M in cash. The acquisition provides IDT with a highly regarded Automotive & Industrial business, and extends their technology leadership in high performance programmable power devices and timing & signal conditioning.

Automotive & Industrial provides a significant new growth opportunity. IDT gains immediate leverage for new designs in Wireless Charging, Power Management, and Timing & Signal Conditioning. ZMDI’s business is already well established and positioned for growth, and benefits immediately from IDT’s scale and technology.

“This move accelerates progress to our $800M annual revenue goal within our industry benchmark financial performance by over a year,” said Gregory Waters, IDT President & CEO. “IDT’s strategy is unchanged, but our product and technology position is significantly expanded. Our target market segments of Consumer, Communications, and High Performance Computing all benefit from additional product, revenue, and customer relationships that bolster our commitment to outgrow the semiconductor market by at least a factor of two.”

IDT extends their rapidly growing line of programmable power devices, with new high-power products addressing Communications Infrastructure and Data Center applications. This creates a new industry franchise for high performance, scalable power management solutions that cover applications ranging from Wireless Charging to Solid State Drives to Data Centers & 4G/5G basestations.

“We gain an exceptional group of talented people and intellectual property from ZMDI, who join one of the technology industry’s fastest growing companies. With the added benefit of IDT’s cost structure and high volume manufacturing capability, we expect ZMDI revenues to achieve a similar financial model as IDT’s existing business in the first year of combined operations,” Waters added.

ZMDI’s signal conditioning products provide an elegant interface between microcontrollers and analog components, such as sensors. This is extremely complimentary to IDT’s Advanced Timing products, and will enable intelligent systems that are aware of their surroundings, and can adjust system performance, timing, and power management automatically.

“We’re enthusiastic to join with IDT, and create the best positioned product innovation team in the mixed-signal semiconductor industry,” said Thilo von Selchow, President and CEO of ZMDI. “It’s rare to see such a potent combination that not only provides a powerful financial result, but more importantly establish the product and technology teams that will lead the industry in innovative new products and growth for this decade.”

The transaction has been unanimously approved by the board of directors of both companies, with closing expected before calendar end.

Mentor Graphics Corporation today announced an update to the Mentor (R) Embedded Nucleus (R) real time operating system (RTOS) targeting low power, next-generation applications for connected embedded and internet of things (IoT) devices. The Nucleus RTOS supports the development of safe and secure applications utilizing the ARM (R) TrustZone (R) in Cortex (R)-A processors. The ARM TrustZone technology provides a system approach to create processor partitioning that isolates both hardware resources and software to help create a “secure” world that is protected from software attacks.

Non-secure applications are executed in the non-isolated domain – the “normal” world- without the ability to impact the applications executing in the secure world. Devices with safety and security operating requirements can isolate and execute secure applications on the Nucleus RTOS in a trusted environment with priority execution over the non-secure applications in the normal world.  Devices requiring a safe domain with dedicated peripherals for trusted applications to support secure software updates, digital rights management, and trusted payments will benefit from the hardware partitioning technology provided by the ARM TrustZone. This release of the Nucleus RTOS also includes support for low power, resource constrained IoT devices with 6LoWPAN and 802.15.4 wireless connectivity.

The explosive growth of smart IoT connected devices with the proliferation of cloud-based services places new requirements on developers to protect assets from software attacks. The ARM TrustZone enables embedded system developers to allocate system peripherals such as secure memory, crypto blocks, wireless devices, LCD screens, and more to a secure operating domain that is isolated from the remaining system. This hardware separation allows for the development of separate, secure applications on Nucleus RTOS in a trusted environment.

“For IoT and other connected applications, the expanded security and low-power connectivity features in Mentor’s Nucleus RTOS provide many of the capabilities needed for the creation of complex heterogeneous IoT systems,” stated Markus Levy, founder and president of EEMBC and The Multicore Association. “These features complement leading-edge hardware capabilities to meet the needs of today’s advanced IoT embedded systems.”

The applications in the secure world have access to all the system resources while a secure monitor acts to ensure the priority execution over the non-secure normal world applications. The secure monitor provides complete isolation to allow for the execution of bare-metal, Linux (R) or Nucleus RTOS-based applications in the normal world without impacting the safe Nucleus RTOS-based applications in the secure world.  The Nucleus RTOS with ARM TrustZone makes it possible to selectively secure peripherals and applications for system isolation to meet safety and security requirements.

“Nucleus RTOS support for ARM TrustZone provides system developers with the ability to meet the highest levels of safety and security for critical applications for heterogeneous OS-based systems,” states Scot Morrison, general manager of runtime solutions, Mentor Graphic Embedded Systems Division, “ARM TrustZone isolates the general purpose operating system, bare metal or Nucleus RTOS in the normal world from the secure application running in Nucleus RTOS in the secure world.”

IoT wearables, portable medical devices, home automation systems, and other smart connected devices are routinely designed with limited system resources to reduce power consumption and extend battery life. Designed for low data rate IP-driven communication, IPv6 over Lower Power Wireless Personal Area Network (6LoWPAN) is an adaptation layer that can be used to connect resource-limited IoT devices to the internet using IP network links like Ethernet, WiFi, or low power wireless connections. The Nucleus RTOS enables the development of IoT devices with 6LoWPAN to allow the low power exchange of data using TCP, UDP, CoAP transport protocols with compatible application layer security protocols such as DTLS. The use of IPv6 addressing allows every IoT device to have a routable IP address to facilitate internet and cloud access using the standard IP network infrastructure. For low power devices, embedded IoT developers can use 6LoWPAN over 802.15.4 wireless communication. With the Nucleus RTOS, IoT end nodes can be connected, monitored and updated using cloud-based services.

SEMI, the global industry association advancing the interests of the worldwide electronics supply chain, today published a new report, “Global 200mm Fab Outlook to 2018.” According to the report, worldwide 200mm semiconductor wafer fab capacity is forecast at 5.2 million wafer starts per month (wspm) in 2015 and expanding to 5.4 million wspm in 2018. In addition to the release of the report, SEMI is offering two complimentary webinars (November 2 at 5:00pm Pacific; November 3 at 8:00am Pacific) with highlights of the newly released 200mm report.

Based on the rapidly increasing number of internet-enabled mobile devices and the emergence of the IoT (Internet of Things), demand for sensors, MEMS, analog, power and related semiconductor devices is growing. While these devices are critical to enable the new era of computing, the applications do not require leading-edge manufacturing capability, and this demand is “breathing new life” into 200mm fabs.

Source: Global 200mm Fab Outlook, SEMI; October 2015

Source: Global 200mm Fab Outlook, SEMI; October 2015

Highlights of the results of the SEMI 200mm report include:

  • 36 facilities are expected to add 300,000 to 400,000 200mm wspm from 2015 through 2018.
  • Capacity investment is expected to total over US $3 billion during the 2015 to 2018 period.
  • Eight new facilities/lines are expected to begin operation from 2015 through 2018.
  • China and Southeast Asia are forecast to lead the expansion in 200mm fab capacity.

In this report, SEMI covers nearly 200 facilities using 200mm wafers, including facilities that are planned, under construction, installing new equipment, active, closing or closed, and fabs changing wafer size to and from 200mm. Analysis covers the years 1995 to 2018, with focus on developments in the recent past through 2018. The 80-page SEMI report offers graphs and tables in PDF slide format and details in Microsoft Excel. In addition, the report includes trend analysis for fab capacity and count; capacity additions for new and existing fabs; capacity loss for fabs closing or converting to other wafer sizes; 200mm equipment spending; and summary and highlights for each region.

Slideshow: 2015 IEDM Preview

October 20, 2015
The 2015 IEDM Conference will be held in Washington DC.

The 2015 IEDM will be held in Washington DC.

This year marks the 61st annual IEEE International Electron Devices Meeting (IEDM). It is arguably the world’s pre-eminent forum for reporting technological breakthroughs in semiconductor and electronic device technology, design, manufacturing, physics, and modeling. The conference focuses not only on devices in silicon, compound and organic semiconductors, but also in emerging material systems.

As usual, Solid State Technology will be reporting insights from bloggers and industry partners during the conference. This slideshow provides an advance look at some of the most newsworthy topics and papers that will be presented at this year’s meeting, which will be held at the Washington, D.C. Hilton from December 7-9, 2015.

Click here to start the slideshow

Check back here for more articles and information about IEDM 2015:

Helpful conference links:

This week, SEMI announced an exceptional lineup of speakers for SEMICON Japan’s keynote stage “SuperTHEATER”, which focuses on key market and technology challenges and developments, and their impact on the semiconductor supply chain. SEMICON Japan 2015, the largest exhibition in Japan for semiconductor manufacturing and related processing technology, will take place at Tokyo Big Sight in Tokyo on December 16-18.

Japan’s semiconductor industry capital expenditure rebounded in 2014 and this year 13 percent growth is forecast for equipment spending. For front-end equipment, a 33 percent increase is expected in Japan this year according to the recent SEMI World Fab Forecast report. Drivers for the increased investment are: NAND Flash, CMOS sensors, power semiconductors, and automotive semiconductors.

Attendees at SEMICON Japan will explore the key technologies and business models necessary to grow in the coming years. The SuperTHEATER will offer nine keynote forums, all with simultaneous English-Japanese translation, with global top executives. Opening Keynote presenters are:

  • Fujitsu: Masami Yamamoto, chairman and representative director
  • Tata Consultancy Services Japan: Amur S. Lakshminarayanan, president and CEO
  • Rakuten Institute of Technology: Masaya Mori, executive officer and representative

The Semiconductor Executive Forum features executives from Micron Technologies, Renesas Electronics, and Sony. The SEMI Market Forum offers presentations from IHS Global, VLSI Research, and SEMI. An IT Forum features presenters from Cisco Japan, Google Japan, Microsoft Japan, and Qualcomm. The Lithography Business Forum and Manufacturing Innovation Forum showcase speakers from Dai Nippon, KLA-Tencor, Intel, Nomura, Toshiba, and TSMC. The Digital Society Forum features speakers from Cisco Japan, Hitachi and Frost & Sullivan Japan, while the Smart Life & Smart Car Forum with have presenters from IBM Japan, Nissan Motor and Renesas Electronics. The Grand Finale Panel program features top Japanese semiconductor supply chain executives — from Toshiba, Infineon Japan, JSR, Tokyo Electron, Micron Memory Japan, and Megachips.

A team of scientists from the University of Chicago and Penn State University has accidentally discovered a new way of using light to draw and erase quantum-mechanical circuits in a unique class of materials called topological insulators.

In contrast to using advanced nanofabrication facilities based on chemical processing of materials, this flexible technique allows for rewritable “optical fabrication” of devices. This finding is likely to spawn new developments in emerging technologies such as low-power electronics based on the spin of electrons or ultrafast quantum computers. The research was published Oct. 9 in the American Association for the Advancement of Science’s new online journal Science Advances.

“This observation came as a complete surprise,” said David D. Awschalom, the Liew Family Professor and deputy director in the Institute of Molecular Engineering at UChicago, who was one of two lead researchers on the project. “It’s one of those rare moments in experimental science where a seemingly random event — turning on the room lights — generated unexpected effects with potentially important impacts in science and technology.”

The electrons in topological insulators have unique quantum properties that many scientists believe will be useful for developing spin-based electronics and quantum computers. However, making even the simplest experimental circuits with these materials has proved difficult because traditional semiconductor engineering techniques tend to destroy their fragile quantum properties. Even a brief exposure to air can reduce their quality.

In Science Advances, the researchers report the discovery of an optical effect that allows them to “tune” the energy of electrons in these materials using light, and without ever having to touch the material itself. They have used it to draw and erase p-n junctions — one of the central components of a transistor — in a topological insulator for the first time.

Like many advances in science, the path to this discovery had an unexpected twist.

“To be honest, we were trying to study something completely different,” said Andrew Yeats, a graduate student in Awschalom’s laboratory and the paper’s lead author. “There was a slow drift in our measurements that we traced to a particular type of fluorescent lights in our lab. At first we were glad to be rid of it, and then it struck us—our room lights were doing something that people work very hard to do in these materials.”

The researchers went back to Bulley & Andrews Construction, the contractor that renovated the lab space, for more information about the lights. “I’ve never had a client so obsessed with the overhead lighting,” said Frank Floss, superintendent for Bulley & Andrews. “I could have never imagined how important it would turn out to be.”

The researchers found that the surface of strontium titanate, the substrate material on which they had grown their samples, becomes electrically polarized when exposed to ultraviolet light, and their room lights happened to emit at just the right wavelength. The electric field from the polarized strontium titanate was leaking into the topological insulator layer, changing its electronic properties.

Awschalom and his colleagues found that by intentionally focusing beams of light on their samples, they could draw electronic structures that persisted long after the light was removed.

“It’s like having a sort of quantum Etch A Sketch in our lab,” he said. They also found that bright red light counteracted the effect of the ultraviolet light, allowing them to both write and erase. “Instead of spending weeks in the cleanroom and potentially contaminating our materials,” said Awschalom, “now we can sketch and measure devices for our experiments in real time. When we’re done, we just erase it and make something else. We can do this in less than a second.”

To test whether the new technique might interfere with the unique properties of topological insulators, the team measured their samples in high magnetic fields. They found promising signatures of an effect called weak anti-localization, which arises from quantum interference between the different simultaneous paths that electrons can take through a material when they behave as waves.

“One exciting aspect of this work is that it’s noninvasive,” said Prof. Nitin Samarth, the George A. and Margaret M. Downsbrough Department Head of Physics at Penn State, and a lead researcher on the project. “Since the electrical polarization occurs in an adjacent material, and the effect persists in the dark, the topological insulator remains relatively undisturbed. With these fragile quantum materials, sometimes you have to use a light touch.”

To better understand the physics behind the effect, the researchers conducted a number of control measurements. They showed that the optical effect is not unique to topological insulators, but that it can act on other materials grown on strontium titanate as well.

“In a way, the most exciting aspect of this work is that it should be applicable to a wide range of nanoscale materials such as complex oxides, graphene and transition metal dichalcogenides,” said Awschalom. “It’s not just that it’s faster and easier. This effect could allow electrical tuning of materials in a wide range of optical, magnetic and spectroscopic experiments where electrical contacts are extremely difficult or simply impossible.”

Research reported in the Japanese Journal of Applied Physics by researchers at Mitsubishi Electric Corporation describes the development of a new power module made from a SiC metal-oxide-semiconductor field-effect transistor and a SiC Schottky barrier diode. The team successfully trialed the module in a train traction inverter — a device used to convert the direct current from the power source to three-phase alternating current suitable for driving the propulsion motors — with promising results.

Power electronics: Silicon carbide gains traction
Next-generation power electronics capable of reducing energy consumption are in high demand, particularly in the transportation industries. A key way of saving energy in electronics is by reducing the losses inherent in switching processes and power conversion. Much attention is now being given to a compound form of silicon and carbon called silicon carbide (SiC) for electronic components, a material whose properties outperform conventional silicon in terms of thermal conductivity, loss reduction and the ability to withstand high voltages.

Researchers in Japan have developed new power modules comprising all silicon carbide (SiC) MOSFETs (a) and SBDs (b). The power modules show great promise in improving the performance and efficiency of traction inverters for trains, reducing switching losses by 55% compared with conventional inverters.

Researchers in Japan have developed new power modules comprising all silicon carbide (SiC) MOSFETs (a) and SBDs (b). The power modules show great promise in improving the performance and efficiency of traction inverters for trains, reducing switching losses by 55% compared with conventional inverters.

Satoshi Yamakawa and co-workers at Mitsubishi Electric Corporation have developed a new power module made from a SiC metal-oxide-semiconductor field-effect transistor (MOSFET) and a SiC Schottky barrier diode (SBD). The team successfully trialed the module in a train traction inverter – a device used to convert the direct current from the power source to three-phase alternating current suitable for driving the propulsion motors — with promising results.

For a power module in a traction inverter, low power loss, miniaturization, high voltage rating, and high temperature environmental resistance are required.

Yamakawa and his team prepared the SiC MOSFET for the power module by n-type doping the junction field-effect transistor region: this reduced on-resistance of the device at high temperatures. By combining the SiC MOSFET with a SiC SBD — a diode which allows for fast and efficient switching — the team created a power module for a traction inverter rated at 3.3kV/1500A.

A new traction inverter system equipped with their power module is stable, highly efficient and reduces switching losses by 55% compared with conventional silicon-based inverters.

Reference and affiliation
Kenji Hamada1, Shiro Hino1,2, Naruhisa Miura1,2, Hiroshi Watanabe1,2, Shuhei Nakata1,2, Eisuke Suekawa3, Yuji Ebiike3, Masayuki Imaizumi3, Isao Umezaki3, and Satoshi Yamakawa1,2. 3.3kV/1500A power modules for the world’s first all-SiC traction inverter. Japanese Journal of Applied Physics  54 04DP07 (2015)

1. Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
2. R&D Partnership for Future Power Electronics Technology (FUPET), Minato, Tokyo 105-0001, Japan
3. Power Device Works, Mitsubishi Electric Corporation, Fukuoka 819-0192, Japan

This research is featured in the September 2015 issue of the JSAP Bulletin.