12/15/2015  SEMI projects that worldwide sales of new semiconductor manufacturing equipment will decrease 0.6 percent to $37.3 billion in 2015.

12/15/2015  A team of engineers from Cornell University, the University of Notre Dame and the semiconductor company IQE has created gallium nitride (GaN) power diodes capable of serving as the building blocks for future GaN power switches -- with applications spanning nearly all electronics products and electricity distribution infrastructures.

12/15/2015  Applied Materials, Inc. today announced that Dr. Chorng-Ping Chang, who leads the company's strategic external research with universities and industry consortia, has been named a 2016 IEEE Fellow.

12/14/2015  SEMICON Japan 2015, an exhibition in Asia for semiconductor manufacturing and related processing technology, opens tomorrow at Tokyo Big Sight.

12/14/2015  At last week’s IEEE International Electron Devices Meeting 2015, nano-electronics research center imec presented three novel aluminum gallium nitride (AlGaN)/ gallium nitride (GaN) stacks featuring optimized low dispersion buffer designs.

12/14/2015  After deflated 2015, 3D leads the way.

12/14/2015  The agreement for Kozarska-Dubica-based production of mono and policrystalline silicon ingots and wafers for photovoltaic cells was signed a few days ago by MegaGroup, a Italian photovoltaic Holding currently owning MegaCell, MegaEngineering and MegaCivic and soon a new Company fully dedicated to the Bosnian project.

12/11/2015  TSMC this week submitted an application to the Investment Commission of Taiwan's Ministry of Economic Affairs for an investment project to build a wholly-owned 12-inch wafer manufacturing facility and a design service center in Nanjing, China.

12/11/2015  SEMI this week reported that worldwide semiconductor manufacturing equipment billings reached US$9.6 billion in the third quarter of 2015.

12/10/2015  Using a new procedure researchers at the Technical University of Munich (TUM) and the Ludwig Maximillians University of Munich (LMU) can now produce extremely thin and robust, yet highly porous semiconductor layers. A very promising material - for small, light-weight, flexible solar cells, for example, or electrodes improving the performance of rechargeable batteries.

12/10/2015  Light and electricity dance a complicated tango in devices like LEDs, solar cells and sensors. A new anti-reflection coating developed by engineers at the University of Illinois at Urbana Champaign, in collaboration with researchers at the University of Massachusetts at Lowell, lets light through without hampering the flow of electricity, a step that could increase efficiency in such devices.

12/10/2015  At this week’s IEEE IEDM conference, nano-electronics research center imec demonstrates record enhancement of novel InGaAs Gate-All-Around (GAA) channel devices integrated on 300mm Silicon and explores emerging tunnel devices based on optimization of the same III-V compound semiconductor.

12/09/2015  At this week’s IEEE IEDM conference, nano-electronics research center imec showed for the first time the integration of high mobility InGaAs as a channel material for 3D vertical NAND memory devices formed in the plug (holes) with the diameter down to 45nm.

12/09/2015  Due to the further scaling and increasing complexity of transistors, the boundaries between back-end-of-line and front-end-of-line reliability research are gradually fading. Imec’s team leaders Kristof Croes and Dimitri Linten give their vision on the future of reliability research.

12/09/2015  Feed-forward can be applied for controlling overlay error by using Coherent Gradient Sensing (CGS) data to reveal correlations between displacement variation and overlay variation.

12/09/2015  Worldwide semiconductor fab equipment capital expenditure growth (new and used) for 2015 is expected to be 0.5 percent (total capex of US$35.8 billion), increasing another 2.6 percent (to a total of $36.7 billion) in 2016, according to the latest update of the quarterly SEMI World Fab Forecast report.

12/09/2015  At this week’s IEEE International Electron Devices Meeting 2015, nano-electronics research center imec presented breakthrough results to increase performance and improve reliability of deeply scaled silicon CMOS logic devices.

12/08/2015  Beyond economic limits due to litho limitations, the inherent need for a physical barrier puts an electrical limit on the ability to scale.

12/08/2015  It is possible to fabricate copper pillars more than 100?m in height, with aspect ratios up to 6:1, using advanced packaging stepper lithography in conjunction with electroplating.

12/08/2015  CEA-Leti today announced it has developed two techniques to induce local strain in FD-SOI processes for next-generation FD-SOI circuits that will produce more speed at the same, or lower, power consumption, and improve performance.