12/19/2014  Given the current buzz around the Internet of Things (IoT), it is easy to lose sight of the challenges – both economic and technical.

12/18/2014  Defects that aren’t detected inline cost fabs the most.

12/18/2014  Cross section sample preparation is demonstrated using a workflow that combines High Accuracy Cleaving I(HAC) and Broad Ion Beam (BIB) milling.

12/18/2014  North America-based manufacturers of semiconductor equipment posted $1.22 billion in orders worldwide in November 2014 (three-month average basis) and a book-to-bill ratio of 1.02, according to the November EMDS Book-to-Bill Report published today by SEMI.

12/18/2014  LSA technology plays an enabling role to overcoming manufacturing challenges for sub-20nm logic devices.

12/18/2014  Nobody likes surprises - especially the managers of $10 billion factories.

12/17/2014  At this week’s IEDM 2014, held in San Francisco, California, nanoelectronics research center imec demonstrated an ultra-low power RFID transponder chip.

12/17/2014  At this week’s IEEE International Electron Devices Meeting (IEDM 2014), nanoelectronics research center imec and its associated lab at Ghent University have demonstrated the industry’s first integrated graphene optical electro-absorption modulator (EAM) capable of 10Gb/s modulation speed.

12/16/2014  New work from Carnegie's Ivan Naumov and Russell Hemley delves into the chemistry underlying some surprising recent observations about hydrogen, and reveals remarkable parallels between hydrogen and graphene under extreme pressures.

12/16/2014  Amkor Technology, Inc., a provider of semiconductor assembly and test services, today announced that it has granted GLOBALFOUNDRIES a non-exclusive license to its proprietary copper pillar wafer bump technology.

12/16/2014  Researchers in Spain have discovered that if lead atoms are intercalated on a graphene sheet, a powerful magnetic field is generated by the interaction of the electrons' spin with their orbital movement.

12/16/2014  Synopsys, Inc. today announced the expansion of its collaboration with imec (nanoelectronics research center imec) to nanowire and other devices (FinFETs, Tunnel-FETs) targeting the 5-nanometer (nm) technology node and beyond.

12/16/2014  The semiconductor equipment and materials industry is currently enjoying a double-digit annual growth rate and good prospects looking forward to 2015.

12/12/2014  An international team of physicists and chemists based at the University of California, Berkeley, has for the first time taken snapshots of this ephemeral event using attosecond pulses of soft x-ray light lasting only a few billionths of a billionth of a second.

12/12/2014  A team of researchers led by North Carolina State University has found that stacking materials that are only one atom thick can create semiconductor junctions that transfer charge efficiently, regardless of whether the crystalline structure of the materials is mismatched - lowering the manufacturing cost for a wide variety of semiconductor devices such as solar cells, lasers and LEDs.

12/12/2014  Murata Electronics North America, Inc. and Peregrine Semiconductor Corporation, founder of RF silicon on insulator (SOI) and pioneer of advanced RF solutions, today announce that Murata has acquired all outstanding shares of Peregrine.

12/12/2014  The Optical Society (OSA) and the IEEE Photonics Society announced that Paul Daniel Dapkus, W. M. Keck Distinguished Professor of Engineering at the University of Southern California, is the recipient of the 2015 John Tyndall Award.

12/12/2014  GSA members identified the Most Respected Public Semiconductor Company Award winners by casting ballots for the industry’s most respected companies for its products, vision and future opportunities.

12/11/2014  Intel Corporation today announced the Intel IoT Platform, an end-to-end reference model designed to unify and simplify connectivity and security for the Internet of Things (IoT).

12/11/2014  Holst Centre, imec and their partner Evonik have realized a general-purpose 8-bit microprocessor, manufactured using complementary thin-film transistors (TFTs) processed at temperatures compatible with plastic foil substrates (250°C).