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WEBCASTS
 Environment, Safety & Health Date and time TBD The semiconductor industry is an acknowledged global leader in promoting environmental sustainability in the design, manufacture, and use of its products, as well as the health and safety of its operations and impacts on workers in semiconductor facilities (fabs). We will examine trends and concerns related to emissions, chemical use, energy consumption and worker safety and health.
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Wafer Processing Date and time TBD As the industry moves to 10nm and 7nm nodes, advances in wafer processing etch, deposition, planarization, implant, cleaning, annealing, epitaxy among others will be required. Manufacturers are looking for new solutions for sustained strain engineering, FinFETs, FDSOI and multi-gate technologies, 3D NAND, and high mobility transistors.
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For the near-term, i.e., extending scaling for one or possibly two more generations below 22nm, Glen Wilk, ASM America, is keen on using materials modification to do the job. He views it as a simple near-term solution from a manufacturing standpoint, given the semiconductor industry's experience with hafnium oxide (HfO), which is already in production.
At the recent IEDM 2010 conference, Leti's Olivier Faynot, Innovative Devices Laboratory leader, discussed planar fully-depleted SOI (FDSOI) technology with Debra Vogler, senior technical editor.
CyberOptics Semiconductors updated its wafer vibration monitoring software, offering new capabilities for data analysis and third-party data interfaces. CyberOptics’ AVS 2.0 vibration monitoring software provides engineers with the data needed to predict equipment failures related to vibration during semiconductor fabrication to improve process yield and cycle times.
Jonathan Rullan et al compare resistance from chemical vapor deposited (CVD) ruthenium liners and direct seed (DS) copper used with advanced Electrofill processes to conventional methods, using different annealing temps and simulated back-end-of-line (BEOL) thermal stress builds. 2X nm trenches were shown to have complete gap fill, eliminating the need for conventional PVD Cu seed.
For the "more than Moore" domain, Leti researchers at IEEE’s IEDM 2010 focused on RF applications in the paper #2.6, "Engineered substrates and 3D integration technology based on direct bonding for future More Moore and More than Moore integrated devices." Laurent Clavelier, head of solar technologies department at Leti, discusses the RF research with Debra Vogler.