10/20/2016  Avalanche Technology, Inc., has entered into a manufacturing agreement with Sony Semiconductor Manufacturing Corporation to begin production of it's Spin Transfer Torque Magnetic RAM (STT-MRAM) on 300mm wafers at various advanced geometry nodes.

10/20/2016  The U.S. Air Force Research Laboratory and the Office of the Secretary of Defense have awarded Raytheon Company [NYSE: RTN] a $14.9M contract to further enhance its process for producing gallium nitride-based semiconductors.

10/20/2016  Researchers at Tokyo Institute of Technology in collaboration with the University of Cambridge have studied the interaction between microwave fields and electronic defect states inside the oxide layer of field-effect transistors at cryogenic temperatures.

10/20/2016  UAB researchers will use pressures greater than those found at the center of the Earth to create as yet unknown new materials.

10/20/2016  In a paradigm shift from conventional electronic devices, exploiting the quantum properties of superlattices holds the promise of developing new technologies.

10/19/2016  Rebound in DRAM market helps raise outlook for total IC market.

10/19/2016  POET Technologies Inc. today announced that on October 17, 2016, it entered into an Agreement with the Singapore Economic Development Board (EDB) to expand POET's research and development (R&D) operations in Singapore.

10/19/2016  SEMI Korea has hosted a SEMI member event every year for its members since 2008 to provide networking opportunities and insight on the ever-changing issues in the industry.

10/18/2016  The HSA Foundation has expanded its Academic Partnership Program with the addition of Northeastern University as the first HSA Academic Center of Excellence.

10/18/2016  After the project's completion, SMIC TianJin is expected to become the world's largest integrated 8-inch IC production line.

10/18/2016  NXP doubles production capacity with new innovation for UHF RFID solutions.

10/17/2016  Samsung Electronics Co., Ltd. today announced that it has commenced mass production of System-on-Chip (SoC) products with 10-nanometer (nm) FinFET technology for which would make it first in the industry.

10/17/2016  Russian and Japanese scientists demonstrate that compact coherent plasmon sources based on van der Waals heterostructures can be designed for use in optoelectronics.

10/17/2016  A research team at Worcester Polytechnic Institute (WPI) has developed a revolutionary, light-activated semiconductor nanocomposite material that can be used in a variety of applications, including microscopic actuators and grippers for surgical robots, light-powered micro-mirrors for optical telecommunications systems, and more efficient solar cells and photodetectors.

10/14/2016  Berkeley Lab and University of Colorado-Boulder team develop new way to reveal crystal features in functional materials.

10/14/2016  Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator), announces that the UltraCMOS PE42723 high linearity RF switch has won an ECN IMPACT Award in the market disruptor category.

10/13/2016  SEMICON Europa 2016, opening in less than two weeks in Grenoble, will explore the issues facing Europe's semiconductor and electronics industries, including processes, materials, equipment and supply chain.

10/13/2016  Semiconductor Manufacturing International Corporation, the largest and most advanced foundry in Mainland China, today held the groundbreaking ceremony of a new 12-inch wafer fab in Shanghai to meet SMIC Shanghai's increasing production and development needs.

10/13/2016  SEMI recently completed its annual silicon shipment forecast for the semiconductor industry. This forecast provides an outlook for the demand in silicon units for the period 2016–2018.

10/13/2016  McGuirk will continue to lead SEMI in his current capacity until a successor is appointed.