Tag Archives: letter-mems-tech

STMicroelectronics (NYSE: STM) has taken underwater accuracy to new heights with its latest miniature pressure sensor, which is featured in the new Samsung Gear Fit 2 Pro.

As smart watches and wearable fitness trackers permeate the fabric of everyday life, owners want to go further with their devices and track performance across extra activities like swimming. Samsung’s Gear Fit 2 Pro, the next generation of sports band, supports these trends with features like built-in GPS, continuous heart rate monitoring, and larger on-board memory to do more even when not connected to a smartphone. ST’s new waterproof pressure sensor, the LPS33HW, is part of the mix: resistant to chemicals like chlorine, bromine, and salt water, it is ideal for pool or sea swimming, and will also resist soaps or detergents used when showering or cleaning.

Wearables are only just beginning to swim, and waterproofing pressure sensors creates challenges beyond just protecting the electronics. The LPS33HW is not only the most accurate, but also helps OEMs get their products to the store-shelves more quickly by recovering sooner after the stresses of manufacturing. Other sensors can require up to seven days to regain maximum accuracy after coming off the production line, but devices containing the LPS33HW are ready for action in less than half that time. This is due to the sensor’s high-performance built-in processor and the advanced formula of its water-resistant gel filling.

“Wearable trackers enhance smart living, and can now deliver an important extra boost with the go-anywhere ruggedness aided by our water-resistant LPS33HW sensor,” said Andrea Onetti, MEMS Sensor Division General Manager, STMicroelectronics. “Samsung takes advantage of the pressure sensor’s best-in-class performance for the new Gear Fit 2 Pro range and users will appreciate both its accuracy and toughness.”

In addition to smart consumer devices like wearables, other equipment including industrial sensors and utility meters can also benefit from the robustness and high measurement accuracy of the LPS33HW. The 10bar pressure sensor can withstand being submerged up to 90 meters, and the very low RMS pressure noise of 0.008mbar allows apps like an altimeter, depth gauge, or weather monitor to deliver consistent and stable results. The sensor accuracy drifts by less than ±1mbar per year.

When soldered to a circuit board during product manufacture, the accuracy is affected by less than ±2mbar, and returns to normal after less than 72 hours – significantly quicker than similar water-resistant pressure sensors.

The LPS33HW is in production now, in a 3.3mm x 3.3mm x 2.9mm cylindrical metal package suitable for use with O-ring seals, priced from $4.50 for orders of 1000 pieces.

Leti, a research institute of CEA Tech, today announced a new European Horizon 2020 project to develop innovative electric drivetrains for third-generation electric vehicles.

Bringing together 10 European research institutes, key members of the automotive-industry value chain and universities, the ModulED project will focus on boosting drivetrain performance to meet vehicle-owner requirements, making manufacturing more efficient and reducing environmental impact and vehicle cost. The project team will leverage recent innovations from diverse industries. These include integrating the frequency, voltage and high-temperature benefits of wide-bandgap semiconductors fabricated with gallium nitride. These devices allow the electronic circuitry that changes direct current to alternating current (DC-AC) to be integrated directly into the motor.

Other recent innovations the project will develop for the new drivetrains include:

  • Processes for manufacturing magnetic materials for the magnetic part of the motor, lowering the density of the rare-earth element
  • Motor architecture that allows modularity in production
  • Transmission and cooling systems that are compatible with hybrid vehicles
  • Optimization of braking systems to recover energy in the braking phase.

“Electric vehicles are a key component of the EU’s commitment to limit climate change, but current electric vehicles face challenges preventing large market acceptance, including consumer resistance due to cost and limited driving ranges,” said Bernard Strée, project coordinator at Leti. “ModulED will target these challenges via the manufacturing process, including the mass-production context, increased value-chain involvement and lifecycle analysis for optimized duration and minimized environmental impact.”

Coordinated by Leti, the three-year, €7.2 million project includes the companies BRUSA Elektronik AG (Switzerland), Punch Powertrain NV (Belgium), ZG GmbH (Germany), Siemens (France), Efficient Innovation (France); universities RTWH Aachen University, Chalmers University and Eindhoven University of Technology, and Leti’s sister institute, Liten.

The ModulED project, which leverages Leti’s expertise in wide-bandgap semiconductors along with Liten’s knowhow in magnetic materials and simulation, launches this month in Grenoble.

On 14-17 November in Munich, SEMICON Europa will co-locate with productronica for the first time, for a focus on innovation and the future of the electronics manufacturing supply chain. Gathering key stakeholders from across the electronics manufacturing supply chain, the extensive range and depth, programs and networking events make the platform a necessity for players across the European electronics industry. SEMICON Europa will take place at Messe München Hall B1.

An Opening Ceremony will include a welcome speech by Ajit Manocha, president and CEO of SEMI, followed by Laith Altimime, president, SEMI Europe, plus four keynotes:

  • Bosch Sensortec: Stefan Finkbeiner, CEO, on how environmental sensing can contribute to a better quality of life in the context of the IoT
  • Rinspeed Inc.: Frank M. Rinderknecht, founder and CEO, on how to create innovative technologies, materials and mobility means of tomorrow
  • SOITEC: Carlos Mazure, CTO, executive VP, on contributions and benefits of engineered substrates solutions and thin-layer transfer technologies, focusing on applications in the smart space
  • TSMC Europe: Maria Marced, president, on opportunities for new business models to apply in the Smart City

“We are at the brink of a new wave of innovation ─ called the “Fourth Industrial Revolution” or “Smart Manufacturing.” It’s driven by connected devices and smart applications known as the IoT. This presents many opportunities for closer collaborations at global level, connecting key players, key ecosystems and building on the strengths of players in the value chain,” said Laith Altimime, president of SEMI Europe.

New programs on Flexible Electronics, Materials, and Automotive expand SEMICON Europa’s impact:

Returning programs include:

Register for programs before 12 November for a discount: http://www.semiconeuropa.org/register

SEMICON Europa offers free programs available on the exhibition show floor, including the TechARENA sessions ─ from MedTech to Lithography, Smart Manufacturing and Photonics, and many other topics.

For the fourth time at SEMICON Europa, INNOVATION VILLAGE will bring early-stage technology companies, the semiconductor industry’s top strategic investors, and leading technology partners together. This year sponsors include the City of Dresden and Volkswagen.

More than ever, there are unique opportunities to network with peers and connect with a large number of stakeholders at SEMICON Europa as attendees gather at the SEMICON CXO Luncheon, SEMI Member Breakfast, and SEMI Networking Night.

Connect! Register here and stay in touch via Twitter at http://www.twitter.com (use #SEMICONEuropa)

GLOBALFOUNDRIES today unveiled AutoPro, a new platform designed to provide automotive customers a broad set of technology solutions and manufacturing services that minimize certification efforts and speed time-to-market. The company offers the industry’s broadest set of solutions for a full range of driving system applications, from informational Advanced Driver Assistance Systems (ADAS) to high-performance real-time processors for autonomous cars.

Today, the automobile semiconductor market is approximately $35 billion, and is expected to grow to an estimated $54 billion by 2023. This is driven by a need for new technologies that promise to enhance the driving experience such as navigation, remote roadside assistance and advanced systems that combine data from multiple sensors with high-performance processors that make control decisions.

“As vehicles move rapidly toward greater autonomy, auto manufacturers and parts suppliers are designing new ICs,” said Gregg Bartlett, senior vice president of the CMOS Business Unit at GF. “GF’s diverse automotive platform combines a range of technologies and services that meet the complexity and requirements for applications that enable connected intelligence for the automotive industry.”

Building on 10 years of automotive experience, the company’s AutoPro technology platform includes offerings in silicon germanium (SiGe), FD-SOI (FDX), CMOS and advanced FinFET nodes, combined with a broad range of ASIC design services, packaging and IP.

GF’s CMOS and RF solutions deliver an optimal combination of performance, integration and power efficiency for advanced sensors (radar, lidar, cameras), ADAS and autonomous processing (sensor fusion and AI compute) and body and powertrain control, with embedded eNVM technology for in-vehicle MCUs, as well as connectivity and infotainment systems. The company’s BCD and BCDLite® technologies provide high-voltage capabilities, with a path to supporting 48 volts that enable automotive power solutions for electric powertrain, Hybrid-electric (HEVs) and Internal Combustion Engine (ICE) vehicles.

These automotive solutions are available now, with additional access to quality and service across GF’s manufacturing fabs in the U.S., Europe, and Asia. GF AutoPro solutions support the full range of AEC-Q100 quality grades from Grade 2 to Grade 0.

AutoPro Service Package

In addition to GF’s technology platform, the company has initiated its AutoPro Service Package designed to ensure technology readiness, operational excellence and a robust automotive-ready quality system to continually improve quality and reliability throughout the product life-cycle.

GF’s Service Package builds on the company’s proven automotive quality and operational controls, providing customers access to the latest technologies which are designed to meet strict automotive quality requirements defined in the ISO, International Automotive Task Force (IATF), Automotive Electronics Council (AEC), and VDA (German) standards.

GF is currently working with major OEM customers and suppliers to develop and produce chips of the optimum quality and reliability as required by the various automotive applications.

Understanding the impact of valve flow coefficient (Cv) in fluid systems for microelectronics manufacturing

BY STEPHANE DOMY, Saint-Gobain Performance Plastics,

When scaling up, or down, a high-purity liquid installation – many complex factors need to be considered from ensuring the integrity of the transported product to the cleanliness of the environment for both the safety of the process and the operator [1]. In my 15 years working in the semiconductor fluid handling component industry, I’ve learned that the Cv is a bit misunderstood. Given the Cv formula can be used for any flow component in a fluid line, most are familiar with it, yet few consider how it relates to their specific installation. Therefore, this article will focus on factors that pertain to achieving a specific flow performance and specifically the flow coefficient (Cv) as it relates to valves.

Cv empirical explanation and more

As we know, when working on a turbulent flow the Cv formula is: Cv= Q√(SG / ∆P) where Q is the flow going through the valve in gallons per minute (GPM), SG is the specific gravity of the fluid and ∆P is the pressure drop in PSI through the component. In the semiconductor industry, due to the low velocity of the transported fluid the high purity chemistry and slurries are mostly in a semi–turbulent state or a laminar state. Yet you’ll notice there is not a single link to the viscosity of the transported product in the Cv formula. This is significant given the viscosity directly impacts the Cv value when the flow is in a semi-turbulent or laminar mode. Consider that if you calculate the pressure drop in your system with the formula above you could end up with a result that is 4 to 5 times lower. No doubt this inaccuracy can cause significant issues in your installation.

To take this further, let’s analyze how pressure drop based on flow evolves through a valve by comparing a Saint-Gobain Furon® Q-Valve (1⁄2” inner flow path and 1⁄2” pipe connection) to a standard semiconductor industry valve of the same size. The Saint-Gobain valve, which meets the requirements of the semiconductor industry (metal free, 100% fluoropolymer flow path and so on), has a Cv of 3.5 – one of the best for its dimensions. To ease the calculation, we will use deionized (DI) water, which will free us of the specific gravity or impact of the viscosity if we are not in the right state.

As we can see on the graph in FIGURE 1, at a normal flow rate used in micro-e for 1⁄2” 5 to 10 lpm; the pressure drop difference between a standard valve and a Saint-Gobain valve is in the range of 0.1 to 0.3 PSI. At first glance, this does not appear to be much. However, let’s factor in a viscous product and that you have a number of these lines in your flow line — now the numbers start to accumulate. And by moving from a standard valve to a Saint-Gobain valve, as described above, you start to see a significant difference in pressure drop, which could occur across your installation. That being said, up to a certain limit (defined by another component in your installation, such as your pump pressure capability or some more delicate device) an “easy” counter is to increase the pressure through put of your pump but it is at the expense of wasting energy and adding the potential for additional shearing or particle generation in your critical fluid. Now that we have reviewed, the impact of the Cv on our flow and how this could impact our installation, let’s see what can potentially impact the Cv.

Screen Shot 2017-09-26 at 1.32.39 PM

Design impact on Cv and resulting trade-off

The first impact that may come to mind is a larger orifice – and it’s correct. The size of the orifice can benefit flow through and directly relates to the volume of your valve. However there are trade-offs for this improved Cv. The first is cost increase. A higher volume requires a larger valve, which can cost up to 50% more than the initial valve due to specific material and process requirements. Additionally, as highlighted in “Design Impact for Fluid Components” by increasing the size of the component (due to the specific micro-e material requirements), you could lose pressure rating performance [1]. Also when increasing the inner volume of your valve, you potentially increase volume retention as well as particle generation, given that using larger actuation systems results in more points of contact and creates a hub for generating particles. Another possible drawback is significant velocity loss, but that will have to be addressed in another article. The critical point to be taken here is the importance of choosing the right size orifice – too small and flow can be restricted too much and too big and you may end up paying for other problems.

Another potential impact to Cv is the difference in valve technology. Though there more, I’ll specifically cover stopcock/ball valves, weir style valves; and diaphragm valves. Other valve technologies, such as the butterfly valve, will not be discussed because their construction materials are generally not used for fluid handling components for the semiconductor industry.

Starting with the simplest design, the stopcock/ball valve provides by far the best Cv of the three technologies mentioned. Considering the premium Cv achieved, you would assume they are expensive. Instead they are generally the cheapest of the three values mentioned. One drawback in using stopcock valves is the need for a liquid oring on the fluid path which may create compatibility issues. The exception is the Furon® SCM Valve, a stopcock valve that employs a PFA on PTFE technology and allows for oring-free sealing. Additionally, stopcock valves can lower pressure/ temperature ratings and have a tendency to generate a great deal of particles when actuated. This occurs when the key or ball is rotating inside the valve body. Both drawbacks are related to the PTFE/PFA construction materials required for the flow path by the micro-e industry.

The weir style valve, if done properly, should provide a very good Cv – perhaps not as good as a stopcock/ball valve, but still very good. And although liquid orings are not an issue, these valves have other drawbacks. In a weir style valve the diaphragm is generally a sandwich structure consisting of a thin layer of PTFE that is backed by an elastomeric component in which a metal pin is embedded to connect the membrane to the valve actuating system. It is the sandwich materials that generate a number of potential issues when used on critical, high purity chemistry. Specifically, the delamination of the sandwich creates the possi- bility of multiple points of contamination to the liquid (metal & elastomer). In addition, the significant surface contact between the membrane and the valve seat, which is necessary to secure a full seal, generates a lot of particles – though significantly less than a stopcock/ball valve.

The diaphragm valve is the most commonly used valve in the semiconductor industry as it offers a great balance in terms of the issues previously identified: potential contami- nation, materials and particle generation. The trade-off is that the construction of these valves is more complex and as a result they are priced higher than the average cost of the other valves. Additionally, the Cv performance is well below a stopcock/ball valve and slightly below a weir style valve. However, by using Saint-Gobain’s patented rolling diaphragm technology this does not have to be an issue. In fact, with this technology, we can offer the equivalent Cv of a weir style valve in combination with premium pressure and temperature capabilities as well as the cleanest valve technology – all of which allows for a system design with the lowest impact possible on the transported fluid.

As demonstrated in this document, understanding the Cv rating and the impacts that could affect that rating as it relates to valves is critical when optimizing an installation for fluid and energy efficiency. Cost aside, there are a number of issues that are unique to the semiconductor industry that ultimately guide and often restrict installation choices, such as: dead volume, particle generation, cleanliness as well as the physical and mechanical properties of appropriate polymers. Additionally, choosing the appropriate valve for your installation goes far beyond the simple notion that if “I need more flow, I will get a larger valve.” Most likely the residual effect of that choice will affect the performance of the system, particularly regarding cleanliness. Instead critical adjustments to your valve actuation mechanism and valve flow path designs as well as to your valve technology may allow you to achieve the required results – even if the installation still uses the same 1⁄2” valve…but more on this point in another article.

References

1. www.processsystems.saint-gobain.com/sites/imdf.processsystems. com/files/2015-12-03-part-one-design-impact-for-fluid-components.pdf

Leti, a technology research institute of CEA Tech, announced today it has developed a methodology for testing high-speed wireless communications on airplanes that allows different system deployments in cabins, and assesses wireless devices before they are installed.

In a joint research project with Dassault Aviation, Leti demonstrated a channel-measurement campaign over Wi-Fi frequency in several airplanes, including Dassault’s Falcon business jet. Using a channel sounder and a spatial scanner, Leti teams determined a statistic model of the in-cabin radio channel, constructed from the antenna position and the configuration of the aircraft.

A radio-frequency channel emulator and the in-cabin channel model were used to test Wi-Fi designed for passenger communication and entertainment before installation in the aircraft. In that test, two different wireless access points and different antenna configurations for Wi-Fi networks deployed in an aircraft cabin were evaluated. Based on an extensive test campaign, mean values of performance parameters, together with the operating margin, were provided according to the device configuration, kind of traffic and channel conditions.

In addition, the technology gives aircraft designers key tools to define wireless communication systems that enhance passenger experience, without aircraft immobilization.

“This research collaboration with Dassault is a critical first step toward validating wireless connectivity systems before they are installed in aircraft,” said Lionel Rudant, Leti strategic marketing manager. “Wireless systems have multiple benefits, ranging from more efficient monitoring of aircraft comfort and safety to reducing the weight of planes.”

Leti’s roadmap also addresses goals for wireless sensor networks, which are part of an industry effort to replace the hundreds of miles of wiring required to connect thousands of sensors and other detectors located throughout aircraft to monitor safety and comfort factors. The factors range from ice detection, tire pressure and engine sensors to cabin pressure, smoke detection and temperature monitoring.

Rudant will present details of Leti’s proof of concept at the AeroTech Conference and Exhibition, Sept. 26-28 in Fort Worth, Texas. His talk, “Test of in-flight wireless connectivity with radio channel emulator”, will be on Sept. 27 at 8 a.m. in room 201B.

UPMEM, a fabless semiconductor startup company, announces UPMEM Processing In-Memory (PIM), the next generation hardware solution for data intensive applications in the datacenter, solving server-level efficiency and performance bottlenecks. UPMEM’s programmer friendly acceleration technology is much awaited for by big data players as Moore’s law is fading away.

“The new generation of data intensive applications can no longer be easily handled by traditional CPUs,” said Gilles Hamou, CEO and co-founder of UPMEM. “Initial benchmarks by our partners validate the game-changing added-value of UPMEM PIM technology, as well as the strong fit of its programming model for a large scope of real world data-intensive applications.”

The PIM chip, integrating UPMEM’s proprietary RISC processors (DRAM Processing Units, DPUs) and main memory (DRAM), is the building block of the first efficient, scalable and programmable acceleration solution for big data applications. Associated with its Software Development Kit, the UPMEM PIM solution can accelerate data-intensive applications in the datacenter servers 20 times, with close to zero additional energy premium. This huge leap opens new horizons for Big Data players, in terms of costs and new services.

“Faster and more efficient data analytics require new datacentric application architectures, positioning compute nearer the data,” said Western Digital iMemory Project leader Robin O’Neill. “The UPMEM Processing In-Memory solution is particularly relevant and highly promising for a variety of data analytics use cases, without dramatic changes to server architectures.”

UPMEM’s innovative technology solves the Memory Wall and the dominant energy cost of data movement between the processor and its main memory in application servers. Thousands of UPMEM in-memory co-processors (DRAM Processing Units, aka DPUs) orchestrated by the main processor, localize most of data processing in the memory chips, while proposing familiar programmability. Besides, the UPMEM solution comes without any disruption of existing server hardware, standardized protocols, programming & compiling schemes, removing any barrier for fast & massive adoption. For instance, the UPMEM solution provides a full DNA mapping and variance analysis in minutes instead of hours, making affordable real-time personalized genomics a reality.

The financing round will enable the company to produce and bring to market its disruptive Processing In-Memory (PIM) chip-based solution. In parallel, UPMEM will accelerate its evaluation programs with top tier global big data customers and IT labs, using available programming and simulation tools.

UPMEM obtained this series A financing from actors engaged in semiconductors and with a strong footprint in Europeand the US: C4Ventures, Partech Ventures, Supernova Invest, Western Digital Capital, Crédit Agricole bank, and entrepreneurs from the data center and micro electronics industry led by Etix CEO Charles-Antoine Beyney. Reza Malekzadeh from Partech Ventures and Charles-Antoine Beyney will join the UPMEM board of directors.

“Data intensive use cases are severally constrained by the Memory Wall issue,” explains Olivier Huez, Partner at C4 Ventures. “We’ve looked far and wide and UPMEM’s founders have built the only company on the market which can address this seamlessly and deliver such an impressive uplift in performance.”

“We are no longer in an era were CPUs and other hardware getting continuously faster would mask the slow speed of inefficient software,” said Reza Malekzadeh, General Partner at Partech Ventures. “UPMEM’s solution addresses the performance needs of modern scale-out applications while preserving datacenter and infrastructure hardware investments.”

“The PIM concept is not new in itself,” said Christophe Desrumaux, Investment Director at Supernova Invest. “But UPMEM brings together a world class team, an innovative patented approach without any hardware compatibility disruption, and a full set of design tools that make it widely adoptable by users.”

Packing tiny solar cells together, like micro-lenses in the compound eye of an insect, could pave the way to a new generation of advanced photovoltaics, say Stanford University scientists.

In a new study, the Stanford team used the insect-inspired design to protect a fragile photovoltaic material called perovskite from deteriorating when exposed to heat, moisture or mechanical stress. The results are published in the journal Energy & Environmental Science (E&ES).

A compound solar cell illuminated from a light source below. Hexagonal scaffolds are visible in the regions coated by a silver electrode. The new solar cell design could help scientists overcome a major roadblock to the development of perovskite photovoltaics. Credit: Dauskardt Lab/Stanford University

A compound solar cell illuminated from a light source below. Hexagonal scaffolds are visible in the regions coated by a silver electrode. The new solar cell design could help scientists overcome a major roadblock to the development of perovskite photovoltaics. Credit: Dauskardt Lab/Stanford University

“Perovskites are promising, low-cost materials that convert sunlight to electricity as efficiently as conventional solar cells made of silicon,” said Reinhold Dauskardt, a professor of materials science and engineering and senior author of the study. “The problem is that perovskites are extremely unstable and mechanically fragile. They would barely survive the manufacturing process, let alone be durable long-term in the environment.”

Most solar devices, like rooftop panels, use a flat, or planar, design. But that approach doesn’t work well with perovskite solar cells.

“Perovskites are the most fragile materials ever tested in the history of our lab,” said graduate student Nicholas Rolston, a co-lead author of the E&ES study. “This fragility is related to the brittle, salt-like crystal structure of perovskite, which has mechanical properties similar to table salt.”

Eye of the fly

To address the durability challenge, the Stanford team turned to nature.

“We were inspired by the compound eye of the fly, which consists of hundreds of tiny segmented eyes,” Dauskardt explained. “It has a beautiful honeycomb shape with built-in redundancy: If you lose one segment, hundreds of others will operate. Each segment is very fragile, but it’s shielded by a scaffold wall around it.”

Using the compound eye as a model, the researchers created a compound solar cell consisting of a vast honeycomb of perovskite microcells, each encapsulated in a hexagon-shaped scaffold just 0.02 inches (500 microns) wide.

“The scaffold is made of an inexpensive epoxy resin widely used in the microelectronics industry,” Rolston said. “It’s resilient to mechanical stresses and thus far more resistant to fracture.”

Tests conducted during the study revealed that the scaffolding had little effect on the perovskite’s ability to convert light into electricity.

“We got nearly the same power-conversion efficiencies out of each little perovskite cell that we would get from a planar solar cell,” Dauskardt said. “So we achieved a huge increase in fracture resistance with no penalty for efficiency.”

Durability

But could the new device withstand the kind of heat and humidity that conventional rooftop solar panels endure?

To find out, the researchers exposed encapsulated perovskite cells to temperatures of 185 degrees Fahrenheit (85 degrees Celsius) and 85 percent relative humidity for six weeks. Despite these extreme conditions, the cells continued to generate electricity at relatively high rates of efficiency.

Dauskardt and his colleagues have filed a provisional patent for the new technology. To improve efficiency, they are studying new ways to scatter light from the scaffold into the perovskite core of each cell.

“We are very excited about these results,” he said. “It’s a new way of thinking about designing solar cells. These scaffold cells also look really cool, so there are some interesting aesthetic possibilities for real-world applications.”

A new device being developed by Washington State University physicist Yi Gu could one day turn the heat generated by a wide array of electronics into a usable fuel source.

The device is a multicomponent, multilayered composite material called a van der Waals Schottky diode. It converts heat into electricity up to three times more efficiently than silicon — a semiconductor material widely used in the electronics industry. While still in an early stage of development, the new diode could eventually provide an extra source of power for everything from smartphones to automobiles.

“The ability of our diode to convert heat into electricity is very large compared to other bulk materials currently used in electronics,” said Gu, an associate professor in WSU’s Department of Physics and Astronomy. “In the future, one layer could be attached to something hot like a car exhaust or a computer motor and another to a surface at room temperature. The diode would then use the heat differential between the two surfaces to create an electric current that could be stored in a battery and used when needed.”

Gu recently published a paper on the Schottky diode in The Journal of Physical Chemistry Letters.

A new kind of diode

In the world of electronics, Schottky diodes are used to guide electricity in a specific direction, similar to how a valve in a water main directs the flow of liquid going through it. They are made by attaching a conductor metal like aluminum to a semiconductor material like silicon.

Instead of combining a common metal like aluminum or copper with a conventional semiconductor material like silicon, Gu’s diode is made from a multilayer of microscopic, crystalline Indium Selenide. He and a team of graduate students used a simple heating process to modify one layer of the Indium Selenide to act as a metal and another layer to act as a semiconductor. The researchers then used a new kind of confocal microscope developed by Klar Scientific, a start-up company founded in part by WSU physicist Matthew McCluskey, to study their materials’ electronic properties.

Unlike its conventional counterparts, Gu’s diode has no impurities or defects at the interface where the metal and semiconductor materials are joined together. The smooth connection between the metal and semiconductor enables electricity to travel through the multilayered device with almost 100 percent efficiency.

“When you attach a metal to a semiconductor material like silicon to form a Schottky diode, there are always some defects that form at the interface,” said McCluskey, a co-author of the study. “These imperfections trap electrons, impeding the flow of electricity. Gu’s diode is unique in that its surface does not appear to have any of these defects. This lowers resistance to the flow of electricity, making the device much more energy efficient.”

Next steps

Gu and his collaborators are currently investigating new methods to increase the efficiency of their Indium Selenide crystals. They are also exploring ways to synthesize larger quantities of the material so that it can be developed into useful devices.

“While still in the preliminary stages, our work represents a big leap forward in the field of thermoelectrics,” Gu said. “It could play an important role in realizing a more energy-efficient society in the future.”

Imagine repeatedly lifting 165 times your weight without breaking a sweat — a feat normally reserved for heroes like Spider-Man.

Rutgers University-New Brunswick engineers have discovered a simple, economical way to make a nano-sized device that can match the friendly neighborhood Avenger, on a much smaller scale. Their creation weighs 1.6 milligrams (about as much as five poppy seeds) and can lift 265 milligrams (the weight of about 825 poppy seeds) hundreds of times in a row.

Its strength comes from a process of inserting and removing ions between very thin sheets of molybdenum disulfide (MoS2), an inorganic crystalline mineral compound. It’s a new type of actuator – devices that work like muscles and convert electrical energy to mechanical energy.

The Rutgers discovery — elegantly called an “inverted-series-connected (ISC) biomorph actuation device” — is described in a study published online today in the journal Nature.

“We found that by applying a small amount of voltage, the device can lift something that’s far heavier than itself,” said Manish Chhowalla, professor and associate chair of the Department of Materials Science and Engineering in the School of Engineering. “This is an important finding in the field of electrochemical actuators. The simple restacking of atomically thin sheets of metallic MoS2 leads to actuators that can withstand stresses and strains comparable to or greater than other actuator materials.”

Actuators are used in a wide variety of electromechanical systems and in robotics. They have applications such as steerable catheters, aircraft wings that adapt to changing conditions and wind turbines that reduce drag, the study notes.

The discovery at Rutgers University-New Brunswick was made by Muharrem Acerce, study lead author and a doctoral student in Chhowalla’s group, with help from E. Koray Akdo?an, teaching assistant professor in Department of Materials Science and Engineering, said Chhowalla, senior author of the study.

Molybdenum disulfide — a naturally occurring mineral — is commonly used as a solid-state lubricant in engines, according to Chhowalla, who also directs the Rutgers Institute for Advanced Materials, Devices and Nanotechnology. It’s a layered material like graphite, with strong chemical bonding within thin layers but weak bonding between the layers. Thus, individual layers of MoS2 can be easily separated into individual thin sheets via chemistry.

The extremely thin sheets, also called nanosheets, remain suspended in solvents such as water. The nanosheets can be assembled into stacks by putting the solution onto a flexible material and allowing the solvent to evaporate. The restacked sheets can then be used as electrodes — similar to those in batteries – with high electrical conductivity to insert and remove ions. Inserting and removing ions leads to the expansion and contraction of nanosheets, resulting in force on the surface. This force triggers the movement — or actuation — of the flexible material.

Chhowalla and his group members found that their MoS2-based electrochemical device has mechanical properties such as stress, strain and work capacity that are extraordinary considering the electrodes are made by simply stacking weakly interacting nanosheets.

“The next step is to scale up and try to make actuators that can move bigger things,” Chhowalla said.