11/01/2013  Rubicon Technology announced the launch of the first commercial line of large diameter patterned sapphire substrates (PSS) in four-inch through eight-inch diameters.

11/01/2013  Columbia Engineers develop new device architecture for 2D materials, making electrical contact from the 1D edge.

11/01/2013  UPV/EHU-University of the Basque Country researchers have developed and patented a new source of light emitter based on boron nitride nanotubes and suitable for developing high-efficiency optoelectronic devices.

11/01/2013  Peregrine Semiconductor and GLOBALFOUNDRIES, a leading provider of semiconductor manufacturing technology, are sampling the first RF Switches built on Peregrine’s new UltraCMOS 10 RF SOI technologies.

10/30/2013  Results can depend on the properties of the wafers used, the conditions of the implant, the conditions of the anneal process, and even the measurement technique.

10/30/2013  The move to 4500mm wafers will likely result in gas flow increased on process vacuum and abatement equipment.

10/30/2013  The next major roadblock to progress in the ongoing push to develop EUV lithography for volume production is the availability of defect-free mask blanks.

10/29/2013  New atomic layer-by-layer InGaN technology offers perfect crystal.

10/29/2013  Researchers in electrical and computer engineering at UC Santa Barbara have introduced and modeled an integrated circuit design scheme in which transistors and interconnects are monolithically patterned seamlessly on a sheet of graphene, a 2-dimensional plane of carbon atoms. The demonstration offers possibilities for ultra energy-efficient, flexible, and transparent electronics.

10/22/2013  A new Department of Energy grant will fund research to advance an additive manufacturing technique for fabricating three-dimensional (3D) nanoscale structures from a variety of materials. Using high-speed, thermally-energized jets to deliver both precursor materials and inert gas, the research will focus on dramatically accelerating growth, improving the purity and increasing the aspect ratio of the 3D structures.

10/21/2013  In the 1960s, James Early of Bell Labs proposed three-dimensional structures as a natural evolution for integrated circuits. Since then many attempts have been made to develop such a technology.

10/21/2013  In a paper appearing in Nature's Scientific Reports, Dr. Ramesh Mani, professor of physics and astronomy at Georgia State University, reports that a giant magnetoresistance effect depends on the physical size of the device in the GaAs/AlGaAs semiconductor system.

10/17/2013  When facilities management and water treatment company MSS Group was called in to clean up the process water in a globally renowned manufacturer of semiconductor wafers, the company was presented with an untreated water system suffering from significant corrosion.

10/09/2013  Surprising result: Graphene retains its properties even when coated with silicon.

10/09/2013  For the first time, researchers have mapped this EUV emission and developed a theoretical model that explains how the emission depends on the three-dimensional shape of the plasma.

10/09/2013  Semiconductor capital spending has increased significantly among pure-play foundries as more IDMs shift to a fabless/fab-lite business model and as new foundry participants intensify competition among the old guard.

10/08/2013  Alpha and Omega Semiconductor today reported that Mary L. Dotz, its Chief Financial Officer, has announced her resignation in order to pursue other interests.

10/08/2013  SPTS Technologies and imec announced a joint partnership to further advance micro- and nanosized components for BioMEMS.

10/08/2013  Imec today announced the release of its fully integrated silicon photonics platform (iSiPP25G) for high-performance optical transceivers (25Gb/s and beyond).

10/08/2013  An upcoming challenge of advanced-node design is the expected mask write time increase associated with the continued use of 193nm wavelength lithography.