02/16/2012 

Georgia Tech

02/13/2012 

Yole Developpement released "European Microelectronic Fabs Database & Report 2012," a database and report on the European microelectronics and microsystem manufacturing fabs, pilot lines, and major R&D organizations.

02/08/2012 

The 2011 International Technology Roadmap for Semiconductors (ITRS) has been publicly released. Several areas of advancement are highlighted in the 2011 ITRS: DRAM and Flash memory, and MEMS.

02/06/2012 

Nextreme Thermal Solutions announced that its thin-film thermoelectric technology has achieved a 60.1°C temperature difference between its cold and hot sides at an ambient temperature of 24.7°C, bringing it on par with the performance of bulk thermoelectric technology.

02/03/2012 

X-FAB Silicon Foundries, a More-than-Moore semiconductor foundry, has used SFT's R3D (Resistive 3D) software for its 0.18

01/31/2012 

CEA-Leti launched a major new platform, Open 3D, that provides industrial and academic partners with a global offer of mature 3D packaging technologies for their advanced semiconductor products and research projects.

01/24/2012 

The USPTO is looking to increase the diversity of honorees for its annual National Medal of Technology and Innovation (NMTI), honoring "this nation's creative geniuses."

01/23/2012 

Silex Microsystems joined Energy-efficient Piezo-MEMS Tunable RF Front-End Antenna Systems for Mobile Devices to develop TSVs, PZT thin films, and other technologies for high-performance RF systems targeting mobile devices.

01/23/2012 

Sony has developed a backside-illuminated CMOS image sensor that layers the pixel section with back-illuminated structures over the chips containing signal processing circuits, instead of using supporting substrates.

01/20/2012 

Minco Technology Labs, hi-rel semiconductor die processing, packaging and test provider, appointed board member Bill Bradford as president and CEO.

01/19/2012 

Samsung Electronics began producing embedded multi-chip package (eMCP) memory for use in entry- to mid-level smartphones. The products use low power double-data-rate 2 (LPDDR2) 30nm DRAM and 20nm NAND flash memory.

01/19/2012 

Optomec opened its new and expanded Advanced Applications Lab and Product Development Facility in St. Paul, MN. The facility will help Optomec grow its Aerosol Jet additive manufacturing technology for advanced printed electronics applications.

01/13/2012 

For the first time, Apple Inc. has publicly published a list of over 150 companies that the electronics giant says represent 97% of its procurement expenditures for materials, manufacturing, and assembly of products worldwide.

01/11/2012 

Increased I/O density, power/performance reqs, and other factors are increasing use of flip chip, 2.5D and 3D technologies, a boon to packaging subcontractors. But they face a challenge from foundries, and must navigate under-utilization of wire bonding capacity.

01/10/2012 

The SMTA released its call for presenters for SMTA International (SMTAI) 2012, October 14-18 in Orlando, FL. The association, along with Chip Scale Review magazine, also announced the keynote for the International Wafer-level Packaging Conference (IWLPC), held November 5-8, San Jose, CA.

01/10/2012 

Teledyne Microelectronic Technologies will expand its optical packaging portfolio in a partnership with Zephyr Photonics, which makes a proprietary high-temp vertical-cavity surface-emitting laser (VCSEL).

01/10/2012 

Packaging house Inari Berhad signed an MOU to acquire Amertron Global, which operates in the Philippines and China providing microelectronics and optoelectronics manufacturing services.

01/05/2012 

JEDEC Solid State Technology Association released a new standard for wide I/O mobile DRAM: JESD229 Wide I/O Single Data Rate. Wide I/O mobile DRAM increases die integration -- stacking chips with TSV interconnects with a SoC -- and improves bandwidth, latency, power, weight, and form factor.

01/03/2012 

Solid State Technology asked top analysts and technologists to provide insights on the transition to 22nm semiconductor devices. Read through the whole 10-forecast series, or check out the individual articles as you have time to see perspectives on lithography, device architecture, and more.

01/02/2012 

The benefits of 3D IC integration can be combined with aggressively scaled 22nm semiconductor devices, with More Moore (scaling) and More than Moore (package advances) developing in parallel but relatively independently, says Paul Lindner, EV Group (EVG).