09/12/2006 Surface Technology Systems plc (STS), a developer of plasma process technologies required in the manufacturing and packaging of MEMS and advanced electronic devices, announced the development of a new Deep Reactive Ion Etch plasma source which is compatible with 300mm silicon wafers.
09/12/2006 QD Vision Inc. of Watertown, Mass., announced it has been quietly developing and refining a proprietary and scalable printing technique for the manufacture of quantum dot (QD) displays and has begun discussions with commercialization partners.
09/11/2006 September 11, 2006 - Ulvac Coating Corp.'s glass MEMS division has demonstrated trial production of reusable glass molds used in C4NP (Controlled Collapse Chip Connection - New Process), the wafer bumping technology developed by IBM, according to the companies.
09/11/2006 Samsung Electronics Co., Ltd., developed a 40-nm memory device that eliminates the floating gate architecture common to NAND devices. The seventh-generation, 32-Gb memory uses a charge trap flash (CTF) architecture, which places data into a temporary holding chamber in the non-conductive silicon nitride (SiN) layer.
09/11/2006 September 11, 2006 - Samsung Electronics Co. Ltd. says it has completed a working prototype of phase-change random access memory (PRAM), seen as a replacement for high-density NOR flash memory within the next few years. The 512Mbit PRAM device was developed by using vertical diodes with the 3D transistor structure Samsung currently uses to produce DRAMs.
09/11/2006 September 11, 2006 - Two investment firm consortiums are in a bidding war to acquire Freescale Semiconductor, with the pricetag for the former Motorola chipmaking arm soaring past $16 billion, according to a New York Times report.
09/11/2006 At SEMICON Taiwan, SUSS MicroTec, Inc., announced that it has selected a potential commercial source for controlled collapse chip connection new process (C4NP) glass molds. The glass MEMS division of ULVAC Coating Corporation, based in Saitama, Japan, demonstrated trial production of the reusable glass molds needed to bump wafers using IBM's C4NP process.
09/11/2006 September 11, 2006 - Samsung Electronics Co. Ltd. says it has created a 32Gb NAND flash device using 40nm process technologies, featuring a "charge trap flash" (CTF) architecture which the company says "sharply" reduces intercell noise levels, and enables higher scalability to enable transition from 40nm to 30nm and even 20nm processes.
09/11/2006 Cascade Microtech, a maker of tools and systems for precise electrical measurements on small structures, announced a partnership agreement with Philips' MiPlaza research center and Agilent Technologies to create a new world class Electronic Measurement Laboratory on the High Tech Campus in Eindhoven, The Netherlands.
09/08/2006 August 28, 2006 -- /PRNewswire/ -- BERNIN, France -- Soitec (Euronext Paris), the world's leading manufacturer of silicon-on-insulator (SOI) wafers and other engineered substrates, today broke ground on its new 300 mm wafer fab in Singapore.
09/08/2006 Discera, Inc., a CMOS MEMS-based resonator technology provider, will partner with Excelpoint, a distributor in the Asia Pacific region, to begin full-scale commercial deployment of its timing products. Target markets will include China, Singapore, Hong Kong, and India.
09/08/2006 Oki Electric Industry Co., with OKI Printing Solutions, developed a thin-film bonding technology to connect dissimilar materials. Epi film bonding (EFB) eliminates wire bonding and die bonding by exploiting a intermolecular bonding force.
09/08/2006 NanoInk Inc., a company specializing in nanometer-scale manufacturing and applications development for the life science and semiconductor industries, has shipped its 25th NSCRIPTOR Dip Pen Nanolithography system.
09/07/2006 You could say Morinobu Endo is one of the fathers of the carbon nanotube. Even though he didn't call his intellectual offspring by that name, he began working with nanotubes and related materials in the mid-1970s, back when the "micro"-scale was still the latest thing. He published a seminal paper in 1976 that explained how to make them.
09/07/2006 Motorola Labs, the applied research arm of Motorola Inc., and Arizona State University announce a key advancement in the use of Single-Walled Carbon Nanotubes (SWNTs) in field effect transistors (FETs) to sense biological and chemical agents.
09/07/2006 September 7, 2006 - The Dow Chemical Co. is transferring development, manufacturing, and sales and marketing for spin-on silicon containing its "Ensemble" dielectric coatings to Brewer Science, Rolla, MO, as part of efforts to focus on its core business of dielectric materials for wafer-level chip-scale packaging, integrated passives, and SiLK dielectric materials.
09/07/2006 The U.S. Display Consortium (USDC) and Insight Media, a market research firm, will collaborate to generate the 3-D Industry Report. Identifying business opportunities, technical gaps, technologies, standards, and other market factors, the report will be debuted and assessed at a USDC workshop in November 2006.
09/07/2006 Advanced Micro Devices, Inc. (AMD), and ATI Technologies, Inc., cleared certain merger control conditions related to AMD acquiring ATI. The waiting period specified under an amended Hart-Scott-Rodino Antitrust Improvement Act of 1976 expired, moving the companies closer to a merger. The Commissioner of Competition for Canada and the German Federal Cartel Office similarly cleared the transaction.
09/07/2006 September 7, 2006 - Flextronics International Ltd., an electronics manufacturing services (EMS) provider and the world's largest manufacturer of camera modules, has signed a deal with Tessera Technologies Inc. to incorporate wafer-level packaging technology in its entire camera module line.
09/07/2006 September 7, 2007 - Oki Electric Industry Co. Ltd. and Oki Printing Solutions (aka Oki Data Corp.) say they have achieved volume production of LED array chips for LED printheads using a new "epi film bonding" (EFB) technology, in which thin films are released and bonded on dissimilar materials. The technology also shows promise in manufacturing lower-cost and higher-density compound semiconductor devices.