Category Archives: LED Manufacturing

August 13, 2012 — In 2011, light emitting diodes (LEDs) were expected to grab market share from cold cathode fluorescent lamps (CCFLs) in the display backlighting segment. However, prices for CCFL-backlight TVs fell alongside prices for LED-backlit TVs, and consumers preferred lower-cost models. Now, CCFL raw materials costs have exploded, setting the stage for market share grabs by LEDs, albeit later than expected, reports Jimmy Kim, DisplaySearch.

Rare-earth metals, the main raw material for CCFL phosphors, saw 5-10x higher prices from 2010 to 2011. As a result, the price of phosphor also jumped, rising to about 6x the price in 2010.

Figure 1. Prices for rare earth metals and phosphors for CCFL.

This price increase could lead to a scale-down of CCFL production and a lower utilization rate, which will push CCFL unit prices higher, further closing the price gap with LED units.

In 2011, most Japanese CCFL makers had already shed the CCFL business, seeing lost cost competitiveness. Korean and Chinese CCFL makers took the opportunity to fill higher-than-expected CCFL demand. The large scale production enabled by the concentrated purchase orders helped them hold the CCFL unit price stable, even under the increasing raw materials cost.

During 2012, the market situation grew worse for CCFL makers. TV makers introduced new low-cost direct LED-backlit TVs for the entry TV market segment. They plan to increase their sales allocation to these new products, which will lead to a further decrease in demand for CCFL. CCFL panel shipments are expected to decrease more than 40% Y/Y after Q2 2012. In 2011, the decrease was 30% Y/Y. This means that the scale-down and lower utilization rate for CCFL production seems inevitable this year.

Figure 2. CCFL panel shipments.

CCFL prices for some new models increased in Q2. Regardless, there have been almost no changes in CCFL prices for running models. The decrease in CCFL demand caused by the low-cost direct backlight TVs has led to a rise of CCFL unit price. This will probably lead to a further decrease in CCFL demand. We also expect that the EOL of CCFL-backlit LCD TVs will be accelerated.

This full article was published by Jimmy Kim in the DisplaySearch Monitor, August 2012. Learn more about DisplaySearch reports and more at www.displaysearch.com.

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August 10, 2012 – PRNewswire — Albemarle Corporation (NYSE:ALB) will expand its facility in Yeosu, Korea, which will produce commercial quantities of finished catalysts and components used in the polymer industry. The additional manufacturing capacity will be dedicated to producing Albemarle’s PureGrowth products for metal organic chemical vapor deposition (MOCVD), including high purity trimethyl gallium (TMG), triethyl gallium (TEG) and trimethyl aluminum (TMA). These products are used in the epitaxy of light-emitting diode (LED), compound semiconductor, and optoelectronic device wafers.

Albermarle’s existing capacity for these products and trimethyl indium (TMI) is at its Baton Rouge, LA, USA facility. They have been available commercially since January 2011. "Over 80% of the global demand for LED products is in Asia," said Jenny S. Hebert, global product manager for electronic materials, adding that the Korea facility will produce the PureGrowth products to meet demand in the high-growth region and reduce transportation.

The state-of-the-art Korea facilities will maintain the high purity standards required of electronic-grade metal organics. Property for the expansion has been acquired and infrastructure plans approved. The project is slated for completion in 2013.

Albemarle’s Performance Catalyst Solutions division, a segment of its Catalyst global business unit, delivers high performance catalyst solutions through a finished catalyst product portfolio. The division comprises Polymer Catalysts, Chemical Catalyst, and Electronic Materials. Albemarle Corporation develops, manufactures, and markets engineered specialty chemicals for consumer electronics, petroleum refining, utilities, packaging, construction, automotive/transportation, pharmaceuticals, crop protection, food-safety and custom chemistry services. Albemarle regularly posts information to www.albemarle.com.

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August 9, 2012 — Cree, Inc. (Nasdaq:CREE), LED and LED lighting company, made revenue of $306.8 million in Q4 fiscal 2012, ended June 24, 2012. This represents a 26% increase compared to revenue of $243.0 million reported for Q4 FY2011 and an 8% increase compared to Q3 FY2012. For fiscal year 2012, Cree reported revenue of $1.16 billion, which represents an 18% increase compared to FY2011 revenue of $988 million.

Cree expects Q1 2013 to be flat to up 6%. You can see Cree’s full fiscal Q4 report here.

Analysts’ takes:

Cree’s results and Q1 FY2013 guidance set the stage for a recovery in FY13 with LED lighting sales gaining momentum and gross margins on the rise, said Maxim Group analysts.

Maxim notes that Cree’s LED business sector was up only 2%, compared to company-wide growth of 8% sequentially. It appears that volume growth is being offset by average selling price (ASP) declines, said Barclays Capital analysts, despite the continued ramp in the LED lighting market. LED sales are expected to remain mostly flat to slightly down in 2013.

Highest growth came from lighting. This could signal lower component sales through 2013, owing in part to Cree becoming a competitor with some customers by acquiring Ruud.

Cree also achieved slightly higher utilization at its LED manufacturing locations and core factory cost reductions, Maxim reported. The analysts believe production costs for Cree’s new product lines — such as the new CR6 series launched in July — offer a step down in costs by cutting the LEDs used from 30 to 6. Gross margin stability and expectations for modest improvements demonstrate the effectiveness of management’s ongoing initiatives to reduce costs, noted Barclays.

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August 8, 2012 — The light-emitting diode (LED) industry is entering its third growth cycle, general lighting, according to Yole Développement and EPIC’s report, “Status of the LED Industry.” However, the cost of a packaged LED still needs to be reduced by a factor x10 to enable massive adoption. New business models are mandatory to capture added value of LED lighting.

Growth of the LED industry has come initially from the small display application and has been driven forward by LCD applications. LED TV was expected to be the LED industry driver for 2011 but the reality was quite different. Lower adoption of LEDs in the TV market and the entry of several new players, mostly from Asia, created a climate of overcapacity, price pressure and strong competition. As a consequence, packaged LED volume was about 30% lower than expected and revenue shrank due to strong ASP pressure.

Figure. Packaged LED revenue, by application. SOURCE: Yole, Status of the LED Industry, August 2012.

Yole and EPIC estimate packaged LED revenue will reach a market size of $11.4 billion in 2012 and will peak to $17.1 billion by 2018. Growth will be driven both by the display (LCD TV) and general lighting applications until massive adoption of LEDs in lighting.

From 2014, the third growth cycle of the LED business will accelerate with the general lighting application representing more than 50% of the overall packaged LED business. In terms of volume, LED die surface will increase from 22.5 billion mm² (2012) to 80 billion mm² (2018). This will prompt substrate volume growth from 8 million x 2” wafer equivalent (TIE) in 2011 to 39.5 million TIE in 2018, with a CAGR of 26%.

The adoption of LEDs for general lighting applications strongly depends on technology and manufacturing improvements, improving performance and cost to hit an LED adoption trigger point. Industry consensus points out a cost reduction per lumen of packaged LEDs by a factor x10. This can be achieved through a combination of manufacturing efficiency and performance improvement, such as access to larger size wafers, improvements in LED epitaxy cost of ownership through yield and throughput, and improved packaging technologies (phosphors, optics, etc).

Additionally, improved package and luminaire design will also enable significant cost reduction.

Ultimately, the long life of solid state lighting (SSL) technology will totally change the lighting market by dramatically increasing the length of the replacement cycles. The replacement market (aftermarket) will be strongly impacted, pushing traditional players of the lighting industry to define new strategies to capture profit (intelligent lighting, lighting solutions, etc).

“In addition, as value is moving to the top of the value chain (module and luminaire levels), several players that were originally involved only at LED device levels will develop strategies of vertical integration in order to capture more value,” added Tom Pearsall, general secretary, EPIC. But accessing distribution channels represents a big challenge for those players who develop new approaches to sell their lighting products (e-commerce, new distributors). The rise of LED lighting will therefore depend on the right merger of the emerging LED industry with the traditional lighting industry.

The researchers also found that China’s GaN MOCVD reactor capacity has increased by a factor of 20 in the last 3 years. The capacity for GaN LED epitaxy has increased dramatically in 2010 and 2011. This increase took place across all regions but was most dramatic in China (increased by a factor x20 of the reactor capacity between Q4 2009 and Q1 2012).

“Most emerging Chinese LED epiwafer and die manufacturers are still lagging significantly behind their competitors in term of technology maturity and LED performance,” says Dr Eric Virey, senior analyst, LED at Yole Développement.

The bulk of those new companies are not yet capable of manufacturing LEDs to address the large display and general lighting applications that are currently driving the market. In the mid-term, consolidation of the Chinese LED industry will occur (scenario in the central government’s new five-year plan), and China should became a major actor in the LED industry.

The report presents all applications of LEDs and associated market metrics, LED cost reduction opportunities, entire LED value chain, a deep analysis of the general lighting application and an analysis of geographical trends. Authors include Pars Mukish, market and technology analyst and Dr Eric Virey, senior analyst at Yole Développement, amd Tom Pearsall, general secretary, EPIC.

Companies cited in the report: A-Bright, Advanced Photonics, American Bright, American Opto Plus, AOT, ApexScience & Engineering, APT Eelctronics, Aqualite Co, Arima, AUO, Avago, Bridgelux, Bright LED, Brightview electronic, CDT, Century Epitech, Chi Mei Lighting Technology, Citizen Electronics, CREE, CS Bright, Daina, Dominant Semiconductors, Edison, Elec-tech, Enfis, Epiled, Epilight Technology, Epistar, EpiValley, Everlight, Excellence Opto, Fangda group, Formosa epitaxy (Forepi), Galaxia Photonic, GE, Genesis Photonics, Golden Valley Optoelectronics, Hangzhou Silan Azure, Harvatech, HC SemiTek, Heesung, High Power Opto, Hi-Light, Hueyjann Huga, Huiyuan Optoelectronic, Hunan HuaLei Optoelectronic, Hunin Electronic, Idemitsu Kosan, Illumitex, Invenlux, Itswell, KingBright, Kodenshi, Konica Minolta, Korea Photonics Technology Institute (KOPTI), Kwality group, Lattice Power Corporation, LedEngin, LEDTech, Lemnis, Lextar/Lighthouse, LG Display, LG Innotek, Lighting Science, Ligitek, Lite-On, LongDeXin (LDX), Lumei Optoelectronics, Lumenmax, Lumex, Lumileds, LumiMicro, Lumination, Luminus, Lumitek, Lustrous Technology, Luxpia, LuxtalTek, MokSan Electronics, Moser Baer, Nanosys, Nanya, Nationstar, Neo-Neon, Nichia, NiNEX, Oasis, Optek Technology, Opto Tech, Osram, ParaLight, Philips, Power Opto, Powerlightec, Rainbow Optoelectronics, Rohm, Samsung SEMCO, Sanan Optoelectronics, Sanken Electric, Seiwa Electric, SemiLEDs, Seoul semi / Optodevice, Shandong Huaguang Optoelectronics, Sharp, Shenzen Mason Technology, Shenzen Mimgxue, Shenzen Yiliu Electronic, Shenzhen Refond, Showa Denko, Stanley Electric, Sunpu Opto, Supernova, Sylvania, Tekcore, TESS, Tonghui Electronic Corporation, Toshiba, Toyoda Gosei, TSMC, Tyntek, UDC, Unity Opto, Visera Tech, Vishay, VPEC, Walsin Lihwa, Wellipower, Wenrun Optoelectronic, Wooree LED, Xiamen Changelight, Xiamen Hualian, Ya Hsin, Yangzhou Huaxia Integrated Photoelectric (DarewinChip), Yangzhou Zhongke Semiconductor, YoungTeck, Yuti Lighting Shanghai, Zoomview (Xi An Zoomlight), and more.

Yole Développement is a group of companies providing market research, technology analysis, strategy consulting, media, and finance services. For more information, please visit www.yole.fr.

The European Photonics Industry Consortium, EPIC, has three important activities: dialogue with the European Commission, ownership of the European roadmap for photonic technologies, and developing the critical human resource of trained scientists and engineers in the European economic area. EPIC is composed of 80 member organizations and over 400 associate members. For more information: www.epic-assoc.com.

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August 6, 2012 — Zeta Instruments Inc. will install multiple optical profilers for micron-scale surface analysis at sapphire substrate maker Rubicon Technology Inc. (Nasdaq:RBCN). Rubicon is using the Zeta 300 series optical profilers for metrology and inspection on its sapphire substrates and wafer production aimed at the high-brightness light-emitting diodes (HB-LED) market.

Zeta’s 300 series high-precision metrology systems are designed to address the stringent specifications of the patterned sapphire substrate (PSS) market, enabling higher yields and lower wafer scrap at LED makers. One system performs detailed measurement of PSS structure dimensions and wafer defect inspection. It offered the best combination of speed and accuracy for Rubicon’s production-environment metrology needs, said Raja M. Parvez, president and CEO of Rubicon Technology.

Also read: Technology and cost considerations for high-volume HBLED lithography

The Zeta-300 series leverages Zeta’s Z-Dot technology to deliver high repeatability and accuracy for the measurement of LED-patterned/etched substrates, photo-resist and stacked structures on transparent surfaces. Coupled with application-specific software and a companion automated wafer handler, the Zeta-380 provides imaging and measurement capabilities superior to those of laser confocal microscopes.  The Zeta-380 measures and detects defects falling outside the industry certification levels that may not be detected by competing offerings.

Rubicon Technology, Inc. is an advanced electronic materials provider that is engaged in developing, manufacturing and selling monocrystalline sapphire and other crystalline products for light-emitting diodes (LEDs), radio frequency integrated circuits (RFICs), blue laser diodes, optoelectronics and other optical applications.

Zeta Instruments provides optical profiler systems that enable manufacturers of microfluidics/biotechnology, high-brightness LEDs, solar cells, and magnetic storage media to improve yields and process control. To learn more about Zeta Instruments, please visit www.zeta-inst.com.

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August 2, 2012 — Facing a difficult capital market environment, Siemens will publicly list OSRAM via a spinoff to Siemens shareholders, rather than an initial public offeing (IPO). Spinning off OSRAM will make the public listing more independent of capital market conditions.

The aim of Siemens’ move is to give OSRAM independence with more flexible financing options.

OSRAM’s subsidiary, Osram Opto Semiconductors, makes high-power light-emitting diodes (LEDs), infrared components and high-power laser diodes (LDs). Recent news: Osram devises LED solder pad concept for easier second sourcing and Osram plans LED packaging facility in Wuxi

"The deceleration of the world economy has increased in the past few months…our focus above all is on increasing our productivity and efficiency," said Siemens CEO and president Peter Löscher in the company’s Q3 fiscal report. See Siemen’s full Q3 fiscal report here.

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July 30, 2012 — Just after releasing plans to cut its NAND Flash production by 30%, Toshiba Corporation (TOKYO: 6502) said that it will start mass production of white light-emitting diodes (LEDs) on a new 200mm wafer production line in its Kaga Toshiba Electronics Corporation fab in northern Japan. Mass production will start in October.

Toshiba will use gallium nitride on silicon (GaN-on-Si) substrates for the LEDs, born from its collaboration with Bridgelux Inc. The combination of Bridgelux’s crystal growth and LED chip structure and Toshiba’s advanced silicon process and manufacturing technology yielded a prototype LED with a maximum optical output of 614mW. Toshiba will now put these LEDs into mass production.

Toshiba expects white LEDs to be the next generation growth area in its discrete semiconductors business, alongside power devices. White LEDs offer energy efficiency and long lifespans for general purpose lighting, TV backlighting, etc.

Learn more at www.toshiba.com.

Plessey Semiconductor in the UK also is setting up a GaN-on-Si LED production line, building production on 150mm wafers in Plymouth, UK.

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July 30, 2012 — Plessey Semiconductors is installing a multi-million-pound (£) high-brightness light-emitting diode (HB-LED) production line at its Plymouth, UK facility.

The semiconductor product maker took delivery of a CRIUS II-XL reactor in a 7 x 6” wafer configuration from AIXTRON for the line, which will make Plessey’s MaGIC (MAnufactured on Gan ICs) gallium nitride (GaN) technology on 6” wafers. Also read: Plessey acquires CamGaN for GaN-on-Si LED technology

Plessey’s GaN-on-Si technology uses a 2.5µm GaN layer, as compared to 6-8µm layers in other GaN-on-Si approaches, said Neil Harper, Plessey’s HBLED product line director. The thinner GaN layer means less deposition time, which allows multiple production cycles in the reactor in 24 hours.

The 6” silicon wafers offer up to 80% cost reduction from silicon carbide (SiC) or sapphire LED substrates. The current design enables more than 14,000 LEDS (1mm2 1W) per wafer. Plessey’s roadmap is to move to 8” substrates for even greater cost savings.

Efficiencies in the new technology will enable outputs in excess of 150 lumens per watt to be achieved. Typical MAGIC HB LEDs are yielding at 95%. The first samples of a blue LED are characterized by peak emission at 460nm with typical current of 350mA. The technology extends to other emission wavelengths: cyan at 500nm and green at 530nm with amber and white output enabled by phosphor conversion. White output will initially achieve 80 lumens/watt with 450mW output from 1W input, which will be available later this year, and 150 lumens/watt devices are planned for June 2013 with the support of British and European partners.

Plessey intends to integrate its MaGIC HBLED products with its EPIC sensor technology to provide smart lighting solutions for even greater energy savings and carbon footprint reductions.

Plessey Semiconductors develops and manufactures semiconductor products used in sensing, measurement and control applications. Learn more at http://www.plesseysemiconductors.com/products/magic.

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July 26, 2012 — AIXTRON SE introduced a 5 x 200mm gallium nitride on silicon (GaN-on-Si) reactor design for its G5 Planetary Reactor metal organic chemical vapor deposition (MOCVD) platform. AIX G5+ comprises special reactor hardware and process design, developed with customers in AIXTRON’s R&D lab.

Any existing G5 system can be upgraded to this latest version.

Figure. AIX G5+ offers fully rotationally symmetrical uniformity pattern on five wafers.

Power electronics makers are using GaN-on-Si technology, and future high-brightness light-emitting diodes (HB-LEDs) are in development on GaN-on-Si substrates, noted Dr. Rainer Beccard, VP, marketing at AIXTRON. Recent GaN-on-Si development has occured at Lattice Power, NXP Semiconductors, EpiGaN, Bridgelux, Toshiba, and Nitronex, among other semiconductor and LED makers.

GaN-on-Si offers high performance on a lower-cost substrate than sapphire. “Wafer size and material plays a crucial role when it comes to cost-effective manufacturing processes, and thus the transition to 200mm standard silicon wafers is a logical next step on the manufacturing roadmaps,” said Beccard.

The GaN-on-Si reactor was designed for high uniformity and yield. It was developed via simulations, which guided the “fundamentally new” hardware design in the 5 x 200mm configuration.

Select AIXTRON customers are using the AIX G5+, reporting fully rotationally symmetrical uniformity pattern on all five 200mm wafers, which are standard-thickness silicon substrates. These trials also show controlled wafer bow behavior.

AIXTRON provides MOCVD production technologies for semiconductor devices, such as LEDs, lasers, transistors and solar cells. For further information on AIXTRON (FSE: AIXA, ISIN DE000A0WMPJ6, DE000A1MMEF7; NASDAQ: AIXG, ISIN US0096061041), see www.aixtron.com.

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July 24, 2012 — Silicon carbide (SiC) is a niche material for semiconductor, power electronics, and light-emitting diode (LED) manufacturing. Yole Développement analyzed patents related to SiC growth and wafer manufacturing to glean trends in production, R&D, top companies, barriers to entry, and more.

Despite a cumulative raw wafers + epi wafers market that won’t exceed $80 million in 2012, SiC-related patents comprises over 1772 patent families with more than 350 companies involved in the material since 1928. 83% of patents cover a method; 17% of them claim an apparatus.

Figure. SiC crystal, wafer, and epiwafer patents distribution. SOURCE: Yole, July 2012.

SiC growth

Since 1978, the main technique to grow bulk single crystals of SiC has been physical vapor transport (seeded sublimation method, PVT), covered in 36% of published patents, said Dr. Philippe Roussel, business unit manager, Compound Semiconductors, Power Electronics, LED & Photovoltaics, Yole Développement. PVT mostly deals with the hexagonal polytypenH SiC (n=2,4,6). Liquid phase epitaxy (LPE), an alternative SiC growth method developed in 1961, allows crystals to grow with low dislocation densities and at relatively low temperatures. LPE is an attractive SiC growth method for cubic polytype 3C SiC.

Chemical vapor deposition (CVD) almost exclusively dominates SiC epiwafer fab today, and is covered in about 37% of SiC-related patents. Molecular beam epitaxy (MBE) is only mentioned in 1% of patents. The polytype (hexagonal or cubic) is explicitly claimed in 15% of patents.

Numerous strategies to reduce crystal defects (micropipes, carrots, etc.) and make semi-insulating (SI) material are proposed in 23% and 10% of patents respectively.

Patent count vs revenues

About 350 patent applicants are involved in SiC crystal/epiwafer technology, pointed out Roussel, mainly located in Japan (72% of patents) and the US (12% of patents). The five major applicants based on their patents number are Denso, Sumitomo, Nippon Steel, Bridgestone and Toyota. They represent about 35% of studied patents. While Cree Inc. is the 6th major applicant for patents by volume, and the top US company on the list, US companies generate 75% of the SiC wafer business. Leaders include CREE, II-VI, and Dow Corning. Japan is only responsible for 5% of the revenues (at least before SiCrystal was acquired by Rohm). This trend of poor correlation between patent count and revenues is seen in Europe and the rest of Asia as well.

Only 3 Japanese companies are commercially active in SiC material: Showa Denko (epiwafer), Bridgestone (wafer) and Nippon Steel (wafer and epiwafer). China and Korea emerged as new players during the last 5 years, establishing Epiworld, TianYue, TYSTC, and Tankeblue in China and SKC in Korea. However, these companies’ market shares remain very low at the moment.

In the SiC substrate business, Cree holds about 50% market share on a worldwide basis, and has the best reputation in terms of quality, diameter and reproducibility. However, here again Cree does not own the widest patent portfolio.

The only SiC field where number of patents and business size are more balanced is SI SiC technology, where both Cree (vanadium-free) and II-VI (vanadium-doped) have extensively patented their respective developments.

Today’s SiC landscape

Today’s state-of-the-art SiC wafer is 6” diameter, no micropipe, with very low dislocation density. Only CREE seems able to offer such a product today. Barriers to entry and competition in the SiC arena are high, Yole points out.

Cree enjoys funding from the US Department of Defense (DOD), Department of Energy (DOE), Defense Advanced Research Projects Agency (DARPA), and the US Navy, improving its technology for LEDs and power electronics. Cree also likely benefits from cross-fertilization of technologies between LEDs and power electronics.

Virtually no SiC substrate companies are for sale today. Beyond the top 5 SiC substrate leaders, Yole does not see a clear positioning of companies who may want to participate in a sale or merger of their business.

New developments are being made around LPE at Toyota, Denso, and Sumitomo. 3C SiC (Cubic) may also disrupt the current PVT domination.

Report

“Patent analysis of SiC single crystal, wafer and epiwafer manufacturing” from Yole Développement presents the patent landscape for SiC single crystal and epiwafer over a total of 1772 patent families. Several key patents are selected based upon their interest regarding the particular technological issues related to the SiC development, as well as their possible blocking factor for new competing development. It puts in contrast the patent landscape with the current and expected market status, highlighting the most active companies, the patent transfer and the sleeping IP. The document also highlights and describes the key patents that could possibly block newcomers, for both crystal and epi-growth.

The analysis goes along with spreadsheets presenting the 1772 patents (Publication Number, Publication Date, Priority Date, Title, Abstract, Assignee(s) and Inventor(s), Legal Status) with direct link to the full patent text and pictures.

Report author: Philippe Roussel holds a PhD in Integrated Electronics Systems from the National Institute of Applied Sciences (INSA) in LYON. He leads the Compound Semiconductors, LED, Power Electronics and Photovoltaic department at Yole Développement.

Companies cited in this analysis: ABB, ACREO, AIST, Ascatron, ATMI, Bridgestone, C9 Corporation, Cabot, Cree, Crysband, Denso, Dow Corning, Ecotron, Epiworld, Fuji Electric, Fujimi, Fujitsu, Hitachi, Hoya, II-VI, Infineon, Kansai Electric Power, Kwansei Gakuin Univ., Mitsubishi, Mitsui, NASA, National Tsing Hua Univ., N-Crystals, NEC, NeoSemitech, Nippon Pillar Packing, Nippon Steel, NIRO, Nisshin Steel, Norstel, North Carolina Univ., Northrop Grumann, NovaSiC, Okmetic, Panasonic, POSCO, Rohm, Sanyo, SemiSouth, Sharp, Shikusuon, Shinetsu Chemical, Showa Denko, SiC Systems, SiCilab, SiCrystal, Siemens, Sumitomo Metal Industries, TankeBlue, Toshiba, Toyota, TyanYue, TYSTC, United Silicon Carbide, US Navy, Widetronix, etc.

Yole Développement is a group of companies providing market research, technology analysis, strategy consulting, media in addition to finance services. Learn more at www.yole.fr.

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