Device Architecture

DEVICE ARCHITECTURE ARTICLES



Brookhaven studies FET's superconductor transition

05/02/2011 

Brookhaven National Laboratory researchers used molecular beam epitaxy to fabricate FET-like devices that yield insights into superconductivity at a relatively high temperature. Findings, such as paired electrons in the insulating state, could lead to resistance-free electronics.

Solid state drives: Backup capacitors in modern solid state drives

05/02/2011 

NAND flash block architecture.Solid state drives (SSDs) are electrically, mechanically, and software compatible with their conventional electro-mechanical counterparts -- hard disk drives (HDD) -- but instead of using rotating magnetic media to retain data, SSDs use semiconductor memory, mainly NAND flash. Radovan Faltus, AVX, considers write speed improvements when cache memory is used (in particular synchronous dynamic RAM), focusing specifically on the problematic issue of cache memory power backup.

Pioneering new devices and materials for future ICs

05/01/2011  It is expected that from the 15nm node on, the industry will need to adopt new transister architectures; among the contenders: FinFETs and TunnelFETs. Thomas Hoffmann, imec, Leuven, Belguim

Nano-porous dielectrics and copper barriers for 28nm and below

05/01/2011  Copper barrier solutions exist that ensure electrical and reliability performance even as device scaling continues. Harry Whitesell, Eric Hollar, Kang Sub Yim, Li-Qun Xia, Thamos Nowak, Applied Materials, Santa Clara, CA USA

BEOL technology at 20nm half-pitch

05/01/2011  New approaches to patterning, low-k and metallization are reviewed for 20nm hp interconnects. Gerald Beyer, Zsolt Tokei, imec, Leuven, Belgium

MRS Day 4: Outside CMOS fabrication, but respecting boundaries

04/29/2011 

Michael A. Fury continues reporting from this year's MRS Spring meeting. Highlights from Day 4: NEMS and MEMS devices, organic electronics, deposition (ALD, CVD, and ED), and measuring stresses in Cu TSV.

MRS Day 2: The III-V future of CMOS, the return of spin-on low-k

04/27/2011 

Michael A. Fury continues reporting from this year's MRS Spring meeting, looking at second-day papers. Highlights: pushing III-V CMOS, the resurgence of spin-on low-k, work with nanomaterials (nanowires, graphene, nanotubes), and improvements in photovoltaics, LEDs, and printed electronics.

SanDisk 19nm fab tech ramps; volume by H2

04/27/2011 

SanDisk Corporation (NASDAQ:SNDK), flash memory card maker, announced a 64-gigabit (Gb), 2-bits-per-cell (X2) monolithic chip made on 19nm technology.

Imec CNT research: IITC preview

04/25/2011 

after barrier deposition and Cu fillImec researchers will present "Carbon nanotube interconnects: electrical characterization of 150nm CNT contacts with Cu damascene top contact" at IITC 2011. Dr. Marleen van der Veen, senior research scientist at imec discussed the research results and their significance.

Fabless IC leaders call US home

04/25/2011 

2010 was the first year that fabless company IC sales growth tracked behind the total IC market. Seven companies underperformed, and seven others stood out with big gains. IC Insights looks at the US dominance in fabless rankings, fabless growth through 2010, and more.

Kilopass begins NVM new product rollout with Itera, fabbed in 40nm logic CMOS

04/20/2011 

Kilopass Technology Inc., semiconductor logic non-volatile memory (NVM) intellectual property (IP) provider, unveiled Itera, an embedded multi-time programmable (MTP) NVM in 40nm.

Analyst take: Why Intel/Micron's 20nm NAND flash is a big deal

04/15/2011 

IM Flash's newly announced 20nm NAND flash chip pushes the memory envelope even further, but it's a very big deal for several reasons.

MRAM improvement from graphene's magnetic vacancies

04/15/2011 

Image. Schematic of a graphene transistor showing graphene (red), gold electrodes (yellow), silicon dioxide (clear) and silicon substrate (black). Inset shows the graphene lattice with vacancy defects. Vacancies (missing atoms) are shown surrounded by blue carbon atoms. Graphic by Jianhao Chen and Michael S. Fuhrer, University of Maryland. University of Maryland researchers found the Kondo effect in graphene without magnetic additives. With "defect engineering" of graphene, nanoscale magnetic sensors, magnetic storage, and magnetic random access memory applications could be possible.

RRAM developer joins SEMATECH to prototype NVM technologies

04/14/2011 

4DS will collaborate with engineers from SEMATECH's memory program to build a full transistor-memory, demonstrating a working prototype of a low-power RRAM device.

HDD and Flash combine in paired storage: Where is it working?

04/12/2011 

Research and Markets released the "HDDs and Flash Memory: A Marriage of Convenience" report, which examines a new storage architecture that has been named Paired Storage: the combination of flash memory with conventional rotating storage. There are many approaches to paired storage, and several application areas.

Optoelectronics, sensors and discretes sight another record year

04/12/2011 

Figure. Sales changes in the economic downturn and recovery. SOURCE: IC InsightsSlightly above average growth rates in 2011 will lift sales of optoelectronics, sensors and actuators, and discrete semiconductors to new record-high levels again this year, thanks to growth in MEMS and LED markets, says IC Insights.

Flip chip still in growth phase, even at $16B

04/11/2011 

2010 total flip chip market value. Split by cost-of-ownership supply chain segments (substrates for LCD drivers excluded, service margin included). SOURCE: Flip Chip report, Yole Développement, April 2011.Yole reports on the flip chip market, and finds that this $16 billion industry, with diverse applications, is still growing. New flip chip technologies, such as copper pillars, and technology demands, such as fragile 28nm chips, are driving demand.

Tsunami disaster to boost 2011 worldwide semiconductor revenue

04/06/2011 

Figure. Revised and previous quarterly 2011 semiconductor forecasts (Millions of U.S. Dollars). SOURCE: IHS iSuppli April 2011.Supply disruptions and potential shortages following the March 11 earthquake and tsunami in Japan have uplifted semiconductor prices, especially in the memory sector. This means increased semiconductor revenues in 2011, says IHS iSuppli.

The-evolution-of-a-memory-revolution

04/05/2011 

Rambus Inc. memory podcastSharon Holt, Rambus, makes the case for a kind of evolutionary revolution in memory -- one that essentially unifies the memory requirements of PCs/servers as well as smart phones/tablets. Holt says that continuing to increase the speeds of LPDDR while staying within power requirements can be a way to buy time before moving to wide I/O memory with TSV.

TowerJazz-to-buy-Micron-fab-in-Japan

04/05/2011 

TowerJazz is looking to buy Micron Technology's semiconductor fab in Nishiwaki City, Hyogo, Japan. The proposed purchase would nearly double TowerJazz's current internal manufacturing capacity, increasing production by 60,000 wafers per month, and set up a supply agreement between the companies.




WEBCASTS



Environment, Safety & Health

Date and time TBD

The semiconductor industry is an acknowledged global leader in promoting environmental sustainability in the design, manufacture, and use of its products, as well as the health and safety of its operations and impacts on workers in semiconductor facilities (fabs). We will examine trends and concerns related to emissions, chemical use, energy consumption and worker safety and health.

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Wafer Processing

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As the industry moves to 10nm and 7nm nodes, advances in wafer processing – etch, deposition, planarization, implant, cleaning, annealing, epitaxy among others – will be required. Manufacturers are looking for new solutions for sustained strain engineering, FinFETs, FDSOI and multi-gate technologies, 3D NAND, and high mobility transistors.

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