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WEBCASTS
 Environment, Safety & Health Date and time TBD The semiconductor industry is an acknowledged global leader in promoting environmental sustainability in the design, manufacture, and use of its products, as well as the health and safety of its operations and impacts on workers in semiconductor facilities (fabs). We will examine trends and concerns related to emissions, chemical use, energy consumption and worker safety and health.
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Wafer Processing Date and time TBD As the industry moves to 10nm and 7nm nodes, advances in wafer processing etch, deposition, planarization, implant, cleaning, annealing, epitaxy among others will be required. Manufacturers are looking for new solutions for sustained strain engineering, FinFETs, FDSOI and multi-gate technologies, 3D NAND, and high mobility transistors.
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For the near-term, i.e., extending scaling for one or possibly two more generations below 22nm, Glen Wilk, ASM America, is keen on using materials modification to do the job. He views it as a simple near-term solution from a manufacturing standpoint, given the semiconductor industry's experience with hafnium oxide (HfO), which is already in production.
At the recent IEDM 2010 conference, Leti's Olivier Faynot, Innovative Devices Laboratory leader, discussed planar fully-depleted SOI (FDSOI) technology with Debra Vogler, senior technical editor.
For the "more than Moore" domain, Leti researchers at IEEE’s IEDM 2010 focused on RF applications in the paper #2.6, "Engineered substrates and 3D integration technology based on direct bonding for future More Moore and More than Moore integrated devices." Laurent Clavelier, head of solar technologies department at Leti, discusses the RF research with Debra Vogler.
To prepare for the time when the semiconductor industry might choose FinFETs at advanced nodes, SEMATECH researchers investigated possible scalability paths. Options include increasing the fin height, reducing geometries (to get better control in the channel and probably higher drive currents), applying strain, and applying high-mobility materials, says Raj Jammy, SEMATECH.
PC makers are jamming cheap DRAM into systems, as pricing reaches critical levels. Watch for DRAM makers at 6x-nm and 5x-nm nodes to become inefficient, warns iSuppli. DRAM prices are expected to remain critical until at least H2 2011.
Imec researchers demonstrated the competition effect in the switching of several conductive filaments in resistive RAM (RRAM) using a small-size FUSI gate NMOS transistor. The work was laid out in IEDM 2010 paper "Generic learning of TDDB applied to RRAM for improved understanding of conduction and switching mechanism through multiple filaments." Malgorzata Jurczak and Thomas Hoffmann of Imec discuss the developments.