Category Archives: LEDs

August 18, 2011 – BUSINESS WIRE — The Defense Advanced Research Projects Agency (DARPA) of the US Department of Defense (DoD) awarded QD Vision Inc. $900,000 to advance their quantum dot (QD) based infrared (IR) materials and deliver two prototype devices. The R&D is expected to take 12 months.

QD Vision is tasked with creating a prototype device using quantum dots as an emissive layer in an electronic device (electroluminescent application) and another in a film that is activated by external light sources (photoluminescent application). The company has previously demonstrated a quantum-dot-based display, and proprietary printing method to fabricate QDs.

QD Vision has worked with DARPA before as a prime contractor. To learn more about QD Vision’s Government Business, visit www.qdvision.com/government-contracts.

Although this project is sponsored by DARPA, the content of the information does not necessarily reflect the position or the policy of the government, and no official endorsement should be inferred.

QD Vision makes quantum dots, semiconductor crystals that control light, in highly differentiated display and lighting solutions. Learn more at www.qdvision.com

August 17, 2011 – Marketwire — CHAD Industries launched the WaferMate300-2SS sorter/stocker workcell with multiple customer installations. The wafer buffer and kitting module manages wafer transitions in batch fab environments.

Also read: CHAD adapts wafer handlers to LED sapphire wafer sizes

The CHAD WaferMate300-2SS workcell incorporates CHAD’s new compact Wafer Buffer Module to provide dense storage of up to 150 wafers per clean Class-1 module. The Wafer Buffer Module incorporates clean air fan filters and ionizer features to store wafers that are very sensitive to damage from electrostatic discharge (ESD). Each basic workcell holds 4 modules (600 wafers).

The WaferMate300-2SS can sort or stock wafers. The compact workcell is connected to the factory system host via SECS/GEM. When sorting, the workcell receives lot data from either the factory host or the operator, retrieves wafers from the Wafer Buffer Modules, then kits them into output cassettes for the next wafer fab step. In stocker mode, the workcell receives production cassettes from upstream wafer processing, identifies each wafer, and stores them in secure, clean Wafer Buffer Modules.

The workcell incorporates an optical character reader to identify wafer ID scribes. Edge grip wafer handling and integrated wafer flipping capabilities allow the robot to invert and identify wafers that may have been incorrectly placed in the input cassette.

CHAD Industries designs, manufactures and markets odd-form electronics assembly equipment, automated solar cell manufacturing systems, and semiconductor wafer handling solutions.
Learn more at www.chadindustries.net

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August 16, 2011 — KLA-Tencor Corporation (NASDAQ:KLAC) launched the eDR-7000 electron-beam (e-beam) wafer defect review system for chip manufacturing at the 20nm device nodes and below. New technologies enhance sensitivity and throughput during defect imaging and classification processes.

Also read: Yields are key to low costs, in traditional chips and emerging LEDs

The eDR-7000 can "re-locate and image 10nm defects" and oft-missed defect types, and can "review multiple defects per second," driving directly to the defect site at high resolution, said Cecelia Campochiaro, Ph.D., VP and GM, KLA-Tencor’s e-Beam Technology division.

The third-generation, field-tested e-beam immersion column offers high resolution and topographic imaging. The advanced stage and vibration-isolation system claims a three-fold improvement in coordinate accuracy and up to a four-fold increase in defect review speed over the current-generation tool. Sensitivity improvements for bare wafer defects are enabled by energy-dispersive x-ray (EDX) composition analysis. A unique reticle defect review mode investigates sites where reticle defects may have printed. KLAC also reports faster process window characterization. Voltage-contrast imaging mode is used to review e-beam wafer inspection data; offline defect classification capability is also available.

KLAC has received orders for eDR-7000 systems from logic, memory, and equipment manufacturers and foundries. Multiple systems are in use for development and chip production.

KLA-Tencor Corporation (NASDAQ: KLAC) provides process control and yield management products for the semiconductor, data storage, LED, photovoltaic, and other related nanoelectronics industries. Additional information may be found at www.kla-tencor.com.

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August 15, 2011 — Gallium nitride is typically grown on sapphire substrates, as the coeffecient of thermal expansion (CTE) between gallium nitride and silicon can lead to cracks and bowed wafers. Two companies are now announcing advances with gallium nitride grown on silicon (GaN-on-Si), opening up the fabless/foundry economies of scale and production expertise/capital equipment infrastructure of the silicon fab industry to LEDs. Translucent launched its Si wafer templates commerically for GaN growth, and Bridgelux set a new Lumens/W record for Gan-on-Si LEDs.

Translucent Inc., rare-earth-oxide (REO) engineered silicon substrates maker, launched its vGaN (virtual gallium nitride) family of silicon-based wafer templates commercially, offering lower-cost epitaxial surfaces for gallium nitride (GaN) device growth. The main target applications include light-emitting diodes (LED) and field-effect transistors (FET).

The III-N semiconductors family uses scalable GaN-on-Si wafers: crystalline REO layers provide stress relief and wafer flatness is acheived through customized lattice engineering. The REO layer’s wide bandgap of the REO layer could create higher breakdown-voltage characteristics for FETs grown on vGaN.

vGaN provides a semiconductor growth surface that has the physical properties of GaN, but utilizes a silicon substrate upon which is grown an epilayer of REO material that accommodates a top epilayer of Group III nitrides such as GaN. The vGaN substrate enables industry-standard metal-organic chemical vapor deposition (MOCVD) growth processes.

GaN is typically grown on sapphire substrates, which are significantly more expensive at large diameters, especially 200 mm and larger. Additionally, a major challenge facing device manufacturers today is the handling of the large, heavy, and expensive sapphire wafers. Such handling may require the purchase of special handling equipment for the fabrication plants. Conversely, the widely-used infrastructure of fabrication plants that are ready to run silicon wafers up to 200 mm already exists. This makes large-diameter silicon an ideal choice to bring economies of scale into the lighting (LED) and power electronics (FET) industries.

Translucent’s vGaN wafers are available at 100mm diameters; 150 and 200mm will be available during the next year.
 
Translucent, Inc., a subsidiary of Australian listed company Silex Systems Limited. (SLX: ASX), is a materials-based company focuses on using rare-earth oxides to provide low-cost, silicon-based templates for epitaxial growth of semiconductors. More information is available at www.translucentinc.com and www.silex.com.au.

LED lighting developer Bridgelux Inc. set a new company record for Lumen per Watt values for GaN-on-Si. Dr. Steve Lester, Bridgelux chief technology officer, claims LED performance comprable to sapphire-based LEDs, fabbed using Bridgelux’s proprietary buffer layer technology. Lester credits a focus on epitaxial process technology for the new Lumens/W numbers. Crack-free GaN layers were demonstrated on 8" silicon wafers, without bowing at room temperature.

Bridgelux suggests that GaN-on-Si LEDs could offer a 75% cost reduction from conventional LEDs made using sapphire or silicon carbide substrates.

Bridgelux’s first commercially available GaN-on-Si products are on schedule for delivery to the market within the next two years, the company says.

GaN-on-Si Lumens/W results: Cool white GaN-on-Si LEDs showed efficiencies as high as 160Lm/W at a CCT of 4350K. Warm white LEDs delivered 125 Lm/W at 2940K color temperature and CRI of 80. Encapsulated 1.5mm blue LEDs emit 591mW with wall plug efficiencies as high as 59% at 350mA. The LEDs have very low forward voltages, 2.85V at 350mA, making them ideal for use at high current densities. At a drive current of 1 amp the LEDs emitted 1.52 Watts of blue power at a forward voltage of 3.21V, resulting in a wall plug efficiency of 47%. Wavelength uniformity of sigma 6.8nm has been demonstrated for 8" LED wafers with median wavelength of 455nm.

Bridgelux develops and manufactures technologies and solutions for the global lighting industry, using solid-state lighting (SSL). For more information about the company, please visit www.bridgelux.com.

More GaN-on-Si news:

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August 15, 2011 — MKS Instruments Inc. (NASDAQ:MKSI) introduced the elite RF Power Generator for RF deposition and etch in amorphous silicon photovoltaics (a-Si PV), light emitting diode (LED), and micro electro mechanical system (MEMS) manufacturing.

The 13.56MHz elite RF generator features an integrated, single-PCBA design and a compact, air-cooled form factor. It is designed to be cost-effective and easy to install. The generator is available in 2U full rack (pictured above) and 3U half rack (below) enclosures to allow for rack mounting and is available in power levels of 300W, 600W and 750W.

The full rack design eliminates cables and connectors; an inductive clamp technology protects the generator from adverse VSWR load conditions.

The generator is used in passivation, etch, physical (PVD) and chemical vapor deposition (CVD), atomic layer deposition (ALD), strip, cleaning, surface treatment, and coating, as well as back-end electronic packaging steps.

MKS Instruments Inc. is provides technologies to power, control, deliver, monitor, measure and analyze advanced processes in high-growth markets. Learn more at http://www.mksinst.com/.

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August 15, 2011 — SEMI appointed Dennis P. McGuirk as president and CEO, effective November 14, 2011. He replaces Stanley T. Myers, who is retiring after 15 years leading SEMI. McGuirk comes to SEMI from IPC — Association Connecting Electronics Industries, where he has been president and CEO for 12 years.

Stanley T. Myers announced his retirement in April 2011.

SEMI’s markets and customers — semiconductors, photovoltaics, microelectronics, and displays — are experiencing "very exciting points in their evolution," notes SEMI Board Chairman Doug Neugold (ATMI chairman, president and CEO). Watch a video about SEMI’s historic moments, and SEMI memories, from Stanley T. Myers.

McGuirk led IPC’s initiatives for printed circuit board design and manufacture and electronics assembly members. IPC is also a global trade association, like SEMI. McGuirk steered the organization through two difficult recessions, taking it from 2,500 members with less than 25% located outside of the US to 3,000 members of which 38% are located outside the US. "Denny has been a tremendous leader and a great friend to our industry…IPC is in a great position thanks to his hard work and dedication," says Robert Ferguson, chairman of the IPC Board of Directors.

McGuirk was executive director of the National Fluid Power Association from 1996 to 2000.  From 1993 to 1996, he served in various positions with the National Rifle Association of America. Prior to his career in association management, he served for 24 years in the United States Air Force, attaining the rank of Colonel.

McGuirk graduated from the United States Air Force Academy in 1969 with a Bachelor of Science in Western European Affairs. He earned a Master

Update, August 15, 2011 – Varian Semiconductor Equipment Associates, Inc. (NASDAQ:VSEA) achieved a significant milestone in the proposed merger between Varian and Applied Materials, Inc. (NASDAQ: AMAT). At a special stockholders meeting on August 11, Varian stockholders voted to approve the merger.

The merger was approved by holders of approximately 52.8 million shares of Varian’s outstanding common stock, and approximately 237,000 shares voted against the merger. This represents over 99% of the shares present in person or represented by proxy at the special meeting voting in favor of the merger.

Varian continues to expect that the merger will be completed during the second half of 2011. The closing of the merger is subject to the satisfaction or waiver of certain other closing conditions, including, without limitation, the approval of the U.S. Department of Justice under the Hart Scott Rodino Act.

May 4, 2011 – In an early-morning surprise, Applied Materials said it will acquire Varian Semi in a $4.9B deal that adds a new angle to AMAT’s wafer-fab equipment portfolio, and another inroad into related fields including solar PV, displays, and LEDs.

Under terms of the deal, AMAT will pay $63/share in cash for VSEA, a 55% premium over yesterday’s closing price (38% premium to the past 30-day average). VSEA will operate as a business unit of AMAT’s silicon systems group (SSG), and continue to be based in Gloucester, MA. Both company’s boards have unanimously approved the deal, which will be funded with a combination of existing cash balances and debt.

The deal adds ion implantation to AMAT’s wafer-fabrication equipment (WFE) portfolio, as a complement to the company’s other offerings in transistor, interconnect, wafer-level packaging and patterning. The technology also could extend AMAT’s reach further into related markets including solar PV, display, and LEDs.

"Varian is a great fit for our strategy to profitably grow share in our core semiconductor business with best-in-class technology and talent," said Mike Splinter, chairman/CEO of Applied, in a statement. "Applied’s broad capability in semiconductor equipment and Varian’s ion implant expertise will allow us to work more closely with our customers on integrated process solutions at the transistor level," added Randhir Thakur, EVP/GM of Applied SSG.

"In addition to our combined strengths in the semiconductor space, Applied’s proven capability to extend its technology to adjacent markets like solar and display can help unlock the tremendous potential of ion implantation in these markets," added Varian CEO Gary Dickerson.

August 12, 2011 — Tom Hausken, Strategies Unlimited, shares his light emitting diode (LED) forecast, including drivers like new LED backlights and general LED lighting, in a video interview from SEMICON West 2011. He sees 13-15% LED industry growth in the future, after nearly double growth from 2009 to 2010.


High-brightness LEDs (HB-LEDs) started out in commercial applications with automotive uses, then mobile phone backlights. Now, LED TV backlights are driving a growth surge. Once this market is saturated, price erosion should naturally occur, Hausken says. LED lighting is also pushing a cycle of LED growth.

Manufacturing issues? Metal organic chemical vapor deposition (MOCVD) is critical, but it is slow and expensive, Hausken notes. To ramp up LED production, makers need many MOCVD machines. However, Strategies Unlimited thinks that only a percentage of the MOCVD systems shipping now are going to be used in production, as operation expertise lags behind machine purchases and shipments.

While there will be a shake-out in the market, as competition takes place for top suppliers, low-end supplier dominance, etc., Hausken is not concerned about a bubble in LED markets. He also sees global LED manufacturing options, not simply China-based production alone.

More from SEMICON West 2011

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August 11, 2011 – At SEMICON West 2011, Henkel announced a silver sintering material that requires no pressure. The technology enables high-volume production of modem power packages. "Without having to do the pressure and heat process, you can change your units per hour from 30 up to 6000," said Doug Dixon, global marketing communications director at Henkel, in a video interview at the conference. The company has designed this new process into its Ablestik SSP2000, a high-reliability die attach material well-suited for use with power modules such as IGBTs and high power LED products.

Also at SEMICON West, Henkel announced jointly with STMicroelectonics, that the performance of Henkel’s conductive die attach films (Ablestik C100) was validated for production of very small package configurations in a process called ScalPack, which incorporates die with extremely small dimensions. The company commercialized these materials in early 2011.

The new process eliminates the die fillet, and as such, it enables greater design latitude and process capability, noted Dixon in the video interview. A lower bond line thickness is the result and without the fillet, "the die can be the exact same size as the die pad, so the design capabilities are limitless," said Dixon.

August 11, 2011 — In these 2 video interviews from SEMICON West 2011, ESI technologists John Sabol and Vernon Cooke discuss what LED chips require on the back-end manufacturing line, starting at wafer scribing and moving on through test. LEDs differ from semiconductor chips — high light extraction is a major goal, for example — though some goals — high yields and low costs — remain universal.

Wafer scribing for brighter LEDs

John Sabol of ESI talks about wafer scribing for LEDs. The LED industry is working on increasing quantum well efficiencies and light extraction. ESI focused on the latter in developing tools for scribing patterned sapphire wafers and distributed Bragg and metal mirrors.

LED scribing cuts LED wafers into die, going through layers of gold, sapphire, GaN, and other materials. By paying attention to sidewall construction during this cut, ESI was able to integrate a laser cutting technology that keeps light output high.

Handling LED packages for better throughput and yields

Vernon Cooke, ESI, covers the company’s new light emitting diode (LED) manufacturing technologies, focusing on advanced packaging test tools and handling systems. "The back-end process of packaged LEDs equates to about 60% of the total cost of LED manufacturing," Cooke notes.

ESI sees lowering the cost of handling, testing, and binning LEDs as a major goal. Multi-track handling doubles throughput for LED testing. Handling without device damage is also important. Ceramic packages with delicate lenses require different handling methods than standard chips. A nested carrier brings the LED through processes in a protected manner. Equipment toolsets for LEDs must be flexible, Cooke adds, seeing many package sizes and designs for LEDs.

Standardization should occur in the end-product luminaire, Cooke believes, which he says will push standardization back up the manufacturing and interconnect chain.

Read about the LED equipment that ESI launched at SEMICON West here.

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