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WEBCASTS
 Environment, Safety & Health Date and time TBD The semiconductor industry is an acknowledged global leader in promoting environmental sustainability in the design, manufacture, and use of its products, as well as the health and safety of its operations and impacts on workers in semiconductor facilities (fabs). We will examine trends and concerns related to emissions, chemical use, energy consumption and worker safety and health.
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Wafer Processing Date and time TBD As the industry moves to 10nm and 7nm nodes, advances in wafer processing etch, deposition, planarization, implant, cleaning, annealing, epitaxy among others will be required. Manufacturers are looking for new solutions for sustained strain engineering, FinFETs, FDSOI and multi-gate technologies, 3D NAND, and high mobility transistors.
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Wafer fab capex in 2011 is expected to stick around 2010 levels. But don't despair of growth, says Dean Freeman of Gartner. For one thing, cutting-edge wafer fab equipment will be hot. On top of that, 2011 will be a brief respite, with a strong 2012/2013 waiting in the wings.
There are a few key attributes in new consumer electronics: a reduced footprint and/or profile, high electrical performance, fine-pitch design, custom features, and a low cost. Multi-row, wafer-level, flip-chip, and multi-chip packaging can meet these needs, say Unisem writers Rico San Antonio and Chris Stai. They compare the value of each packaging type.
Cornell University researchers have unveiled striking, atomic-resolution details of what graphene "quilts" look like at the boundaries between patches, and have uncovered key insights into graphene’s electrical and mechanical properties.
The Nanotech Innovations SSP-354 is a low-cost system for producing high-quality, multi-walled carbon nanotubes. The device uses an injection CVD process developed at NASA and is integrated into an instrument small enough to fit in a fume hood. The system can produce research-quality, multi-wall carbon nanotubes within a few hours.
Researchers at Brown University and in Korea have described the dynamics behind cutting single-walled carbon nanotubes. Tubes are compressed from both ends, causing atoms to shoot "sideways" off of the nanotube's lattice structure.
At IEDM, Semiconductor Research Corporation and researchers from Waseda University announced process and materials development for precisely controlling both the amount and the position of channel dopants. The researchers say this advance should help extend the manufacturability of semiconductors beyond conventional doped-channel device technologies. The result is projected to enable near atomic-scale devices and single-dopant devices.