Tag Archives: fabrication

MEMS Mirrors for LIDAR

Clever integration of new microelectronic/nanoelectronic technologies will continue to provide increased functionalities for modern products. Light Imaging, Detection, And Ranging (LIDAR) technology uses lasers to see though fog and darkness, and smaller less expensive LIDAR systems are needed for autonomous driving applications now being developed by dozens of major companies around the world. A significant step in the right direction has been taken by the US government’s Lawrence Livermore National Laboratory (LLNL) after working with AMFitzgerald on a MEMS mirror Light-field Directing Array (LDA) prototype.

In-process photo of the Light-field Directing Array (LDA) MEMS prototype designed by Lawrence Livermore National Laboratory. (Source: AMFitzgerald & Assoc.)

In-process photo of the Light-field Directing Array (LDA) MEMS prototype designed by Lawrence Livermore National Laboratory. (Source: AMFitzgerald & Assoc.)

For the past several years, AMFitzgerald has been developing the fabrication process for a novel MEMS micro-mirror array designed by Dr. Robert Panas’s research group at LLNL, as shown in this video. The technology has been developed specifically to serve LIDAR, laser communications, and other demanding applications where existing MEMS mirror array technologies are insufficient. The novel design offers exceptional speed and tilt range, with three axes (tip-tilt-piston), feedback control, and 99% fill factor. The technology is available for license from the LLNL Industrial Partnerships Office.

At the upcoming MEMS & Sensors Technical Congress, on May 11, Dr. Carolyn D. White will present a case study on how she developed this complex prototype and leveraged AMFitzgerald’s ecosystem of partners to integrate specialty processes. Dr. Alissa Fitzgerald—founder and principle of AMFitzgerald leading the development of innovative MEMS and sensor solutions for specialty applications—will be giving a keynote address on “Next Generation MEMS Manufacturing” at 9:10am May 17 during The ConFab. Dr. Fitzgerald has unparalleled expertise in how to best design MEMS for different fab lines, and is a speaker not to be missed.

—E.K.

Moore’s Law Smells Funny

…maybe we need “Integrated Cleverness Law”

“Jazz is not dead, it just smells funny.” – Frank Zappa 1973
from Be-Bop Tango (Of The Old Jazzmen’s Church)

Marketing is about managing expectations. IC marketing must position next-generation chips as adding significant new/improved functionalities, and for over 50 years the IC fab industry has leaned on the conceptual crutch of “so-called Moore’s Law” (as Gordon Moore always refers to it) to do so. For 40 years the raw device count was a good proxy for a better IC, but since the end of Dennard Scaling the raw transistor count on a chip is no longer the primary determinant of value.

Intel’s has recently released official positions on Moore’s Law, and the main position is certainly correct:  “Advances in Semi Manufacturing Continue to Make Products Better and More Affordable,” as per the sub-headline of the blog post by Stacy Smith, executive vice president leading manufacturing, operations, and sales for Intel. Smith adds that “We have seen that it won’t end from lack of benefits, and that progress won’t be choked off by economics.” This is what has been meant by “Moore’s Law” all along.

When I interviewed Gordon Moore about all of this 20 years ago (“The Return of Cleverness” Solid State Technology, July 1997, 359), he wisely reminded us that before the industry reaches the limits of physical scaling we will be working with billions of transistors in a square centimeter of silicon. There are no ends to the possibilities of cleverly combining billions of transistors with sensors and communications technologies to add more value to our world. Intel’s recent spend of US$15B to acquire MobileEye is based on a plan to cost-effective integrate novel functionalities, not to merely make the most dense IC.

EETimes reports that at the International Symposium on Physical Design (ISPD 2017) Intel described more than a dozen technologies it is developing with universities and the SRC to transcend the limitations of CMOS. Ian Young, a senior fellow with Intel’s Technology Manufacturing Group and director of exploratory integrated circuits in components research, recently became the editor-in-chief of a new technical journal called the IEEE Journal of Exploratory Solid-State Computational Devices and Circuits, which explores these new CMOS-fab compatible processes.

Meanwhile, Intel’s Mark Bohr does an admirable job of advocating for reason when discussing the size of minimally scaled ICs. Bohr is completely correct in touting Intel’s hard-won lead in making devices smaller, and the company’s fab prowess remains unparalleled.

As I posted here three years ago in my “Moore’s Law Is Dead” blog series, our industry would be better served by retiring the now-obsolete simplification that more = better. As Moore himself says, cleverness in design and manufacturing will always allow us to make more valuable ICs. Maybe it is time to retire “Moore’s Law” and begin leveraging a term like “Integrated Cleverness Law” when telling the world that the next generation of ICs will be better.

—E.K.

China to be 15% of World Fab Capacity by 2018

Currently there are eight Chinese 300mm-diameter silicon IC fabs in operation as 2016 comes to a close. Chinese IC fab capacity now accounts for approximately 7% of worldwide 300mm capacity, as reported by VLSIresearch in a recent edition of its Critical Subsystems report (https://www.vlsiresearch.com/public/csubs/). This will expand rapidly, as ten are now under construction and two more have been announced. China’s 300mm fabs are located in ten cities.

“Total Chinese capacity is expected to be around 13 million by end 2018,” said John West of VLSI Research. Worldwide 300mm wafer fabrication capacity will exceed 85 million wafers per year in 2018, putting China in control of 15% of worldwide 300mm capacity in 2018. While new Chinese fabs have yet to prove they can produce leading edge silicon ICs with high yields, it should be only a matter of time before they prove they stand among the world’s great semiconductor production regions.

West recently presented a China market outlook for semiconductors, original equipment manufacturers (OEM), and critical subsystems at the recent Critical Materials Council (CMC) Seminar (http:cmcfabs.org/seminars) held in Shanghai. At the same event, representatives from Intel and TI discussed supply-chain dynamics in China, and Secretary General Ingrid Shi of the Integrated Circuit Materials Industry Technology Innovative Alliance (ICMITIA) presented on “The China Materials Supply Consortium and China’s 5 Year Technology Plan.”

The 2016 CMC Seminar also saw a presentation of China’s first semiconductor-grade 300mm silicon wafer supplier:  the recently unveiled Zing Semiconductor (www.zingsemi.com). Founder and CEO Richard Chang, co-founder of SMIC, has assembled a team and funding to start creating wafers in the Pudong region of Shanghai. He showed a photo of his company’s first 300mm silicon boule at the event.

[DISCLOSURE:  Ed Korczynski is also Marketing Director for TECHCET CA, an advisor firm that administers the Critical Materials Council and CMC events.]

—E.K.